A unit pixel includes a first photoelectric conversion unit configured to generate first charges in response to a first incident light, a first transfer transistor connected between the first photoelectric conversion unit and a first node, a connecting transistor connected between a second node and the first node, a second photoelectric conversion unit configured to generate second charges in response to a second incident light, a second transfer transistor connected between a second photoelectric conversion unit and a third node, a switch transistor connected between the third node and the second node, a source follower connected to the first node, a selection transistor connected to the source follower, an overflow transistor connecting the first photoelectric conversion unit and a power supply voltage, and a comparator configured to turn on the overflow transistor.

A unit pixel includes a first photoelectric conversion unit configured to generate first charges in response to a first incident light, a first transfer transistor connected between the first photoelectric conversion unit and a first node, a connecting transistor connected between a second node and the first node, a second photoelectric conversion unit configured to generate second charges in response to a second incident light, a second transfer transistor connected between a second photoelectric conversion unit and a third node, a switch transistor connected between the third node and the second node, a source follower connected to the first node, a selection transistor connected to the source follower, an overflow transistor connecting the first photoelectric conversion unit and a power supply voltage, and a comparator configured to turn on the overflow transistor.

There is provided a solid-state image pickup element including: a photodiode configured to convert incident light into a photocurrent; an amplification transistor configured to amplify a voltage between a gate having a potential depending on the photocurrent and a source having a predetermined reference potential and output the amplified voltage from a drain; and a potential supply section configured to supply an anode of the photodiode and a back-gate of the amplification transistor with a predetermined potential lower than the reference potential.

There is provided a solid-state image pickup element including: a photodiode configured to convert incident light into a photocurrent; an amplification transistor configured to amplify a voltage between a gate having a potential depending on the photocurrent and a source having a predetermined reference potential and output the amplified voltage from a drain; and a potential supply section configured to supply an anode of the photodiode and a back-gate of the amplification transistor with a predetermined potential lower than the reference potential.

The present invention relates to a delta image sensor comprising an arrangement of pixels and a plurality of acquisition circuits corresponding to at least one pixel and formed as part of an integrated circuit. Each acquisition circuit includes at least one sensor circuit comprising a photosensor configured to generate a sensor signal, VSIG, depending on a light signal illuminating the photosensor of the at least one pixel; at least one analogue to digital conversion, A/D, circuit configured to convert a current VSIG to a digital signal; at least one digital storage circuit configured to store a representation of at least one digital signal corresponding to a previous VSIG; at least one digital comparison circuit configured to compare the level of the stored representation with the current VSIG to detect whether a changed level is present; and at least one digital output circuit configured to generate an event output under the condition of the changed level. The sensor circuit is configured to change an analogue function of its read-out characteristics to generate a respective changed VSIG.

The present invention relates to a delta image sensor comprising an arrangement of pixels and a plurality of acquisition circuits corresponding to at least one pixel and formed as part of an integrated circuit. Each acquisition circuit includes at least one sensor circuit comprising a photosensor configured to generate a sensor signal, VSIG, depending on a light signal illuminating the photosensor of the at least one pixel; at least one analogue to digital conversion, A/D, circuit configured to convert a current VSIG to a digital signal; at least one digital storage circuit configured to store a representation of at least one digital signal corresponding to a previous VSIG; at least one digital comparison circuit configured to compare the level of the stored representation with the current VSIG to detect whether a changed level is present; and at least one digital output circuit configured to generate an event output under the condition of the changed level. The sensor circuit is configured to change an analogue function of its read-out characteristics to generate a respective changed VSIG.

There is provided a signal processing device, a signal processing method, and a detection sensor that enable detection of flicker information from an output indicating a luminance change. The signal processing device includes: a count unit that counts a first count number, which is a count number of pixels in which a first luminance change in a positive direction is detected, and a second count number, which is a count number of pixels in which a second luminance change in a negative direction is detected, in an image output from alight receiving unit at a predetermined frame rate and indicating a luminance change; a coefficient generation unit that generates a coefficient corresponding to a time at which the luminance change is detected; and an integrating unit that integrates a multiplication result of the count number of the pixels and the coefficient. The present technology can be applied to, for example, an event detection sensor or the like.

There is no risk of generating unnecessary events.

This imaging device comprises: a photoelectric conversion unit that has a plurality of photoelectric conversion elements for performing photoelectric conversion to generate an electric signal; a setting unit that sets a threshold value according to a noise level in a predetermined region among the plurality of photoelectric conversion elements; and a first detection unit that detects a detection signal in a case where the amount of change in the electric signal generated by the plurality of photoelectric conversion elements exceeds the threshold value.

Provided is a vision sensor including a pixel array including a plurality of pixels disposed in a matrix form, an event detection circuit configured to detect whether an event has occurred in the plurality of pixels and generate event signals corresponding to pixels from among the plurality of pixels in which an event has occurred, a map data processor configured to generate a timestamp map based on the event signals, and an interface circuit configured to transmit vision sensor data including at least one of the event signals and the timestamp map to an external processor, wherein the timestamp map includes timestamp information indicating polarity information, address information, and an event occurrence time of a pixel included in an event signal corresponding to the pixel.

Provided is a vision sensor including a pixel array including a plurality of pixels disposed in a matrix form, an event detection circuit configured to detect whether an event has occurred in the plurality of pixels and generate event signals corresponding to pixels from among the plurality of pixels in which an event has occurred, a map data processor configured to generate a timestamp map based on the event signals, and an interface circuit configured to transmit vision sensor data including at least one of the event signals and the timestamp map to an external processor, wherein the timestamp map includes timestamp information indicating polarity information, address information, and an event occurrence time of a pixel included in an event signal corresponding to the pixel.