In an embodiment, a method (100) is described. The method includes accessing (102) data from a sequence of images of a subject illuminated with ambient light and illumination having a sinusoidal intensity modulation in time. An imaging device is used to obtain the sequence of images and is configured such that a different spatial intensity modulation pattern is apparent in consecutive images of the sequence. The method further includes determining (104), based on a set of measured pixel intensity values in each of the sequence of images, a set of revised pixel intensity values for generating a revised image of the subject such that a reduced level of ambient lighting is apparent in the revised image compared with the level of ambient lighting apparent in at least one of the sequence of images.

In an embodiment, a method (100) is described. The method includes accessing (102) data from a sequence of images of a subject illuminated with ambient light and illumination having a sinusoidal intensity modulation in time. An imaging device is used to obtain the sequence of images and is configured such that a different spatial intensity modulation pattern is apparent in consecutive images of the sequence. The method further includes determining (104), based on a set of measured pixel intensity values in each of the sequence of images, a set of revised pixel intensity values for generating a revised image of the subject such that a reduced level of ambient lighting is apparent in the revised image compared with the level of ambient lighting apparent in at least one of the sequence of images.

There is provided a solid-state image pickup element including: a photodiode configured to convert incident light into a photocurrent; an amplification transistor configured to amplify a voltage between a gate having a potential depending on the photocurrent and a source having a predetermined reference potential and output the amplified voltage from a drain; and a potential supply section configured to supply an anode of the photodiode and a back-gate of the amplification transistor with a predetermined potential lower than the reference potential.

An image sensor includes a CIS (CMOS image sensor) pixel, a DVS (dynamic vision sensor) pixel, and an image signal processor. The CIS pixel includes a photoelectric conversion device generating charges corresponding to an incident light and a readout circuit generating an output voltage corresponding to the generated charges. The DVS pixel detects a change in an intensity of the incident light based on the generated charges to output an event signal and does not include a separate photoelectric conversion device. The image signal processor allows the photoelectric conversion device to be connected to the readout circuit or the DVS pixel.

Embodiments of the present disclosure include an event-based image sensor and an event filtering method for use with an event-based image sensor. The event-based image sensor comprises a plurality of pixel circuits forming a pixel array, each pixel circuit comprising a photoreceptor circuit configured to generate a photoreceptor signal derived from a photocurrent generated by a light impinging on a light-sensitive element of the photoreceptor circuit, and a detector configured to detect a change in the photoreceptor signal and to generate an event in response to the detected change in the photoreceptor signa. The event-based image sensor further includes a processing chain and an event filter that is configured to receive the generated event and to accept the received event based on a plurality of conditions. The plurality of conditions include a condition that the received event is part of a previously unaccepted event trail, the event trail comprising a plurality of successive events having a same polarity and separated by time intervals each shorter than a time threshold.

Embodiments of the present disclosure include an event-based image sensor and an event filtering method for use with an event-based image sensor. The event-based image sensor comprises a plurality of pixel circuits forming a pixel array, each pixel circuit comprising a photoreceptor circuit configured to generate a photoreceptor signal derived from a photocurrent generated by a light impinging on a light-sensitive element of the photoreceptor circuit, and a detector configured to detect a change in the photoreceptor signal and to generate an event in response to the detected change in the photoreceptor signa. The event-based image sensor further includes a processing chain and an event filter that is configured to receive the generated event and to accept the received event based on a plurality of conditions. The plurality of conditions include a condition that the received event is part of a previously unaccepted event trail, the event trail comprising a plurality of successive events having a same polarity and separated by time intervals each shorter than a time threshold.

An image sensor includes a CIS (CMOS image sensor) pixel, a DVS (dynamic vision sensor) pixel, and an image signal processor. The CIS pixel includes a photoelectric conversion device generating charges corresponding to an incident light and a readout circuit generating an output voltage corresponding to the generated charges. The DVS pixel detects a change in an intensity of the incident light based on the generated charges to output an event signal and does not include a separate photoelectric conversion device. The image signal processor allows the photoelectric conversion device to be connected to the readout circuit or the DVS pixel.

An image sensor includes a CIS (CMOS image sensor) pixel, a DVS (dynamic vision sensor) pixel, and an image signal processor. The CIS pixel includes a photoelectric conversion device generating charges corresponding to an incident light and a readout circuit generating an output voltage corresponding to the generated charges. The DVS pixel detects a change in an intensity of the incident light based on the generated charges to output an event signal and does not include a separate photoelectric conversion device. The image signal processor allows the photoelectric conversion device to be connected to the readout circuit or the DVS pixel.

An object is to reduce a circuit scale in a solid-state imaging element that detects an address event. The solid-state imaging element is provided with a plurality of photoelectric conversion elements, a signal supply unit, and a detection unit. In this solid-state imaging element, each of the plurality of photoelectric conversion elements photoelectrically converts incident light to generate a first electric signal. Furthermore, in the solid-state imaging element, the detection unit detects whether or not a change amount of the first electric signal of each of the plurality of photoelectric conversion elements exceeds a predetermined threshold and outputs a detection signal indicating a result of the detection result.

A sensor system includes a light source that applies, to an imaging target, light whose light amount gradually increases or gradually degreases, an event-driven type sensor that generates an event signal by detecting a fluctuation of reflection light from the imaging target after the application of the light whose light amount gradually increases or gradually degreases is started, and a gradation calculation unit that calculates a gradation of the imaging target on the basis of an elapsed period of time from the start of the application of the light whose light amount gradually increases or gradually decreases to the generation of the event signal.