Power consumption of a circuit which makes a determination is reduced. The accuracy of a system which makes a determination is improved. The safety of a target object which is monitored by a sensor element is increased. A system which easily monitors a target object is provided. A semiconductor device includes a detection circuit having a function of analyzing first data and making a first determination of selecting a first value or a second value, a first determination circuit and a second determination circuit having a function of performing feature extraction of an image, a power supply circuit, and a power management unit. The power management unit has a function of allowing a voltage to be supplied from the power supply circuit to the first determination circuit in the case where the first value is selected by the first determination. The first determination circuit has a function of analyzing the first data and making a second determination. The second determination circuit has a function of analyzing the first data and making a third determination in the case where an occurrence of an event is detected in the second determination.

An image capturing apparatus includes an image capturing circuit configured to generate an image signal, a processor, and a memory storing instructions executed by the processor to perform operations including generating image data based on the image signal, determining, acquiring, calculating, and controlling. The determining determines a first exposure condition to be applied to a first region and a second exposure condition to be applied to a second region of the image capturing circuit. The acquiring acquires, based on the image data, a first evaluation value for the first region and a second evaluation value for the second region. The calculating calculates a third evaluation value for the image data based on the first and second evaluation value weighted based on the first and second exposure condition. The control performs focus control of an optical system based on the third evaluation value.

A solid-state imaging device capable of suppressing variations in reference voltages and improving performance of reference voltages is provided. According to one embodiment, the solid-state imaging device includes a pixel outputting a luminance signal voltage corresponding to an amount of incident light, reference voltages, a reference voltage generation circuit outputting a ramp signal and an inverse ramp signal, and an AD converter, and the AD converter includes a comparator including an amplifier coupled to one input terminal, a reference voltage and an input terminal coupled to each of the ramp signals via a capacitor, and an input terminal coupled to each of the reference voltage and the ramp signal via a capacitor, and a ramp current cancel circuit coupled to each of the reference voltages via a cancel capacitor.

A back-illuminated semiconductor light detecting device includes a light detecting substrate having pixels, and a circuit substrate having signal processing units. For each of the pixels, the light detecting substrate includes avalanche photodiodes respectively having light receiving regions provided in a first main surface side of the semiconductor substrate. In the semiconductor substrate, for each pixel, a trench surrounds at least one region including the light receiving region when viewed from a direction perpendicular to the first main surface. The number of signal processing units is larger than the number of light receiving regions in each pixel, and the number of regions surrounded by the trench in each pixel is equal to or less than the number of light receiving regions in the pixel.

An image capturing apparatus includes an area sensor on which photoelectric conversion elements are arranged two-dimensionally, and that includes a plurality of regions, a reading unit for reading, from the area sensor, signals photoelectrically converted by the photoelectric conversion elements, a focus detection unit for performing focus detection using the signals read by the reading unit, and a control unit for performing control as to from which region of the plurality of regions the reading unit preferentially reads the signals of the photoelectric conversion elements.

The present technology relates to a solid-state imaging device, a signal processing chip, and an electronic apparatus that make it possible to utilize the result of detecting an occurrence of an event in imaging. The solid-state imaging device includes: an event detection unit that detects, as an event, a change in an electrical signal generated by each pixel of a pixel array unit; a region-of-interest detection unit that detects, from a result of detecting the event, a region-of-interest of the pixel array unit; and a pixel signal generation unit that generates a pixel signal constituting an image of a region corresponding to the region-of-interest. The present technology is applicable to, for example, a sensor that detects an event that is a change in an electrical signal of a pixel.

An imaging element incorporates a reading portion that reads out captured image data at a first frame rate, a storage portion that stores the image data, a processing portion that processes the image data, and an output portion that outputs the processed image data at a second frame rate lower than the first frame rate. The reading portion reads out the image data of each of a plurality of frames in parallel. The storage portion stores, in parallel, each image data read out in parallel by the reading portion. The processing portion performs generation processing of generating output image data of one frame using the image data of each of the plurality of frames stored in the storage portion.

An image sensing device includes a pixel array including a plurality of unit pixel blocks each including a plurality of unit image sensing pixels arranged in the pixel array and structured to convert light into photocharges. Each of the unit pixel blocks includes a first sub-pixel block including a first floating diffusion region structured to hold the photocharges and a plurality of unit image sensing pixels sharing the first floating diffusion region, and a conversion gain capacitor arranged adjacent to one side of the first sub-pixel block. The conversion gain capacitor includes an impurity region coupled to an input node that receives a conversion gain signal, and a gate structured to surround the impurity region and coupled to the first floating diffusion region to change a gain of the first floating diffusion region in response to a change in the conversion gain signal.

An imaging device including a photoelectric converter that converts incident light into an electric charge; a transfer transistor; a first node coupled to the photoelectric converter via the transfer transistor; a first signal detection transistor having a gate coupled to the first node; a second signal detection transistor having a gate coupled to the photoelectric converter; a signal line coupled to one of a source and a drain of the first signal detection transistor; a first transistor coupled to the first node; and a second transistor coupled to the photoelectric converter, wherein one of the source and the drain of the first signal detection transistor is coupled to the first transistor, one of a source and a drain of the second signal detection transistor is coupled to the second transistor, and no transistor is coupled between the photoelectric converter and the gate of the second signal detection transistor.

A photoelectric conversion device including pixels arranged to form rows, a scanning circuit that performs scanning for sequentially outputting a signal from the pixel on a row basis, and a processing circuit that processes a signal output from the pixel. The processing circuit corrects, based on a first reset signal and a second reset signal based on a reset state of the pixel, an optical signal based on incident light. The scanning circuit performs scanning for outputting the optical signal and the first reset signal from the pixel by scans performed in different periods. The scanning circuit performs scanning for outputting the optical signal and the second reset signal from the pixel by a scan. The first reset signal, the second reset signal, and the optical signal are output from the pixel in a frame period in which signals to be used for generating a frame is output.