A photoelectric conversion device includes a plurality of unit pixels each including a charge holding portion to which charges are transferred from four or more photoelectric conversion units. Sensitivity of each photoelectric conversion unit of a first group to incident light is greater than sensitivity of each photoelectric conversion unit of a second group to the incident light. After charge accumulation is started in all the photoelectric conversion units of the second group, charge accumulation is started in the photoelectric conversion units of the first group. After signals corresponding to charges accumulated in all the photoelectric conversion units of the second group are read out, signals corresponding to charges accumulated in the photoelectric conversion units of the first group are read out.

An image capturing device including a pixel chip having pixel blocks each including one or more pixels; and a signal processing chip having a first control block including a first converting unit for converting a signal from a pixel in at least a first pixel block into a digital signal, and a first storage unit storing the digital signal, and a second control block next to the first control block in a column direction and including a second converting unit for converting a signal from a pixel included in at least a second pixel block into a digital signal, and a second storage unit storing the digital signal, wherein the second converting unit and the second storage unit in the second control block are reversed vertically to the first converting unit and the first storage unit in the first control block.

An image capturing device including a pixel chip having pixel blocks each including one or more pixels; and a signal processing chip having a first control block including a first converting unit for converting a signal from a pixel in at least a first pixel block into a digital signal, and a first storage unit storing the digital signal, and a second control block next to the first control block in a column direction and including a second converting unit for converting a signal from a pixel included in at least a second pixel block into a digital signal, and a second storage unit storing the digital signal, wherein the second converting unit and the second storage unit in the second control block are reversed vertically to the first converting unit and the first storage unit in the first control block.

Systems and methods are provided to determine glare information. An optical filter is configured to attenuate visible light and pass near-infrared light and an image sensor is configured to detect light reflected by a surface after the reflected light passes through the optical filter. The image sensor is further configured to generate image data comprising a detected near-infrared portion of the light reflected by the surface. Processing circuitry is configured to receive the image data from the image sensor and determine near-infrared glare information based on the received image. The near-infrared glare information can be used to adjust display parameter associated with the surface or characterize near-infrared glare properties of the surface.

Systems and methods are provided to determine glare information. An optical filter is configured to attenuate visible light and pass near-infrared light and an image sensor is configured to detect light reflected by a surface after the reflected light passes through the optical filter. The image sensor is further configured to generate image data comprising a detected near-infrared portion of the light reflected by the surface. Processing circuitry is configured to receive the image data from the image sensor and determine near-infrared glare information based on the received image. The near-infrared glare information can be used to adjust display parameter associated with the surface or characterize near-infrared glare properties of the surface.

A control method in an imaging device is provided. The imaging device includes a pixel-cell array including a plurality of photosensitive pixel-units, each photosensitive pixel-unit of the photosensitive pixel-units includes at least two exposure pixels including at least one medium-exposure pixel. The method includes determining an ambient brightness level of a photographing environment; adjusting a first ratio to be a first value, in response to a brightness level of the photographing environment belonging to a high-level or a low-level, wherein the first ratio indicates a ratio of the at least one medium-exposure pixel in the each photosensitive pixel-unit; and adjusting the first ratio to be a second value, in response to the brightness level of the photographing environment belonging to a medium-level, wherein the low-level, the medium-level, and the high-level are in an ascending order, and the first value is greater than the second value.

An image sensor includes a photodiode generating a charge in response to light, a transfer transistor connecting the photodiode and a floating diffusion, a reset transistor connected between the floating diffusion and a power node, a boosting capacitor connected to the floating diffusion, and adjusting a capacity of the floating diffusion in response to a boosting control signal, and a bias circuit having first and second current circuits for supplying different bias currents to an output node to which a voltage signal corresponding to a charge accumulated in the floating diffusion is output. The boosting control signal decreases from a high level to a low level after the transfer transistor is turned off, and the reset transistor is switched from a turned on state to a turned off state when the bias currents of the first and second current circuits are simultaneously provided to the output node.

A photoelectric conversion apparatus includes one or more first avalanche diodes, a first processing circuit configured to be connected to the first avalanche diode(s), one or more second avalanche diodes, and a second processing circuit configured to be connected to the second avalanche diode(s), wherein the first avalanche diode(s) is/are configured to be connected to the second processing circuit by a selection circuit.

Techniques for facilitating unit cell selection verification systems and methods are provided. In one example, a method includes detecting, by each detector of a focal plane array (FPA), electromagnetic radiation. Each detector is selectively coupled to a readout circuit of the FPA via a selection circuit of the FPA. The method further includes, during a frame period, applying a predetermined signal pattern to a portion of the selection circuit, where the portion is associated with a subset of detectors of the FPA, and performing a readout of the FPA to obtain a respective output signal associated with each respective detector of the FPA. The method further includes determining whether the portion of the selection circuit is operating properly based at least on the output signal associated with the detectors of the subset from the readout. Related systems and devices are also provided.

A transfer control device includes a difference identifying section which identifies, for a first and second images sequentially captured by synchronous scanning, a difference region of the second image, on the basis of an event signal indicating a change in intensity of light generated in one or a plurality of pixels of each of the first and second images during a time period from capturing of the first image to capturing of the second image; and a transfer control section which executes data transfer different between the difference region and regions other than the difference region, for the second image.