Disclosed is an image sensing device and an operating method thereof. The image sensing device may include an analyzer suitable for analyzing a state of each of multiple kernels based on system information and a plurality of pixel values, a detector suitable for detecting color noise of a target pixel value among pixel values included in a target kernel among the multiple kernels, according to the analysis result of the analyzer, and a corrector suitable for correcting the target pixel value according to the detection result of the detector.

A method that can detect targets is described. The method includes setting an integration time for each of a plurality of readout circuits based on a speed of the target. The readout circuits are configured to read pixels in an image detector. The pixels have a pitch of less than ten micrometers. The integration time is not more than five hundred microseconds and corresponds to a subframe of a fast frame image. The method also includes performing integrations of each readout circuit based on the integration time. Thus, a plurality of subframes are provided. A number of the subframes are averaged to provide the fast frame image.

The present disclosure relates to an imaging device capable of achieving miniaturization and height reduction of a device configuration, reducing generation of a flare or a ghost, preventing separation of a lens. A size relation of “solid-state imaging element>lens non-effective region>lens effective region” is established in a vertical direction with respect to an incident direction of incident light. The present disclosure is applicable to an imaging device.

A sensor device according to the present technology includes: a pixel array unit in which a plurality of pixel units each having one or a plurality of pixels and capable of generating a gradation signal indicating intensity of a light reception amount and an event signal indicating a change in the light reception amount is two-dimensionally arranged; and a row control unit that can sequentially execute in rows selection of a pixel from which the event signal is to be read and selection of a pixel from which the gradation signal is to be read at different timings.

The present technology relates to a solid state imaging sensor that is possible to suppress the reflection of incident light with a wide wavelength band. A reflectance adjusting layer is provided on the substrate in an incident direction of the incident light with respect to the substrate such as Si and configured to adjust reflection of the incident light on the substrate. The reflectance adjusting layer includes a first layer formed on the substrate and a second layer formed on the first layer. The first layer includes a concavo-convex structure provided on the substrate and a material which is filled into a concave portion of the concavo-convex structure and has a refractive index lower than that of the substrate, and the second layer includes a material having a refractive index lower than that of the first layer. It is possible to reduce the reflection on the substrate such as Si by using the principle of the interference of the thin film. Such a technology can be applied to solid state imaging sensors.

The present technology relates to a solid state imaging sensor that is possible to suppress the reflection of incident light with a wide wavelength band. A reflectance adjusting layer is provided on the substrate in an incident direction of the incident light with respect to the substrate such as Si and configured to adjust reflection of the incident light on the substrate. The reflectance adjusting layer includes a first layer formed on the substrate and a second layer formed on the first layer. The first layer includes a concavo-convex structure provided on the substrate and a material which is filled into a concave portion of the concavo-convex structure and has a refractive index lower than that of the substrate, and the second layer includes a material having a refractive index lower than that of the first layer. It is possible to reduce the reflection on the substrate such as Si by using the principle of the interference of the thin film. Such a technology can be applied to solid state imaging sensors.

The present technology relates to a solid-state image sensing device and an electronic device for reducing noises. The solid-state image sensing device includes: a photoelectric conversion unit; a charge holding unit for holding charges transferred from the photoelectric conversion unit; a first transfer transistor for transferring charges from the photoelectric conversion unit to the charge holding unit; and a light blocking part including a first light blocking part and a second light blocking part, in which the first light blocking part is arranged between a second surface opposite to a first surface as a light receiving surface of the photoelectric conversion unit and the charge holding unit, and covers the second surface, and is formed with a first opening, and the second light blocking part surrounds the side surface of the photoelectric conversion unit. The present technology is applicable to solid-state image sensing devices of backside irradiation type, for example.

It is an object of the present technology to provide an image sensor capable of reducing crosstalk in an AD conversion unit. The image sensor includes: capacitors in an even-numbered column region; and a capacitor in an odd-numbered column region disposed facing the capacitors in the even-numbered column region with different areas.

An image sensor includes a pixel array of pixels arranged in one or more rows and one or more columns, the pixel array configured to generate an image based on light being incident on one or more pixels of the pixel array. The image sensor includes pixel load circuitry connected to one column of pixels and including transistors serially connected to each other. The image sensor includes switches connected in parallel to separate, respective nodes between adjacent transistors. The image sensor includes image sensor processing circuitry configured to receive, from image processor circuitry, gain information indicating an intensity of light concurrently with an image being generated by the image sensor, and control at least one switch of the plurality of switches to be turned on/off to change an electrical path of a current that passes through the pixel load circuitry, based on the gain information.

A method that can detect targets is described. The method includes setting an integration time for each of a plurality of readout circuits based on a speed of the target. The readout circuits are configured to read pixels in an image detector. The pixels have a pitch of less than ten micrometers. The integration time is not more than five hundred microseconds and corresponds to a subframe of a fast frame image. The method also includes performing integrations of each readout circuit based on the integration time. Thus, a plurality of subframes are provided. A number of the subframes are averaged to provide the fast frame image.