An electronic apparatus is provided. The electronic apparatus includes a display and a processor configured to obtain a low-frequency variation amount based on low-frequency information corresponding to a first frame and low-frequency information corresponding to a second frame, obtain a high-frequency variation amount based on high-frequency information corresponding to the first frame and high-frequency information corresponding to the second frame, obtain a weight based on a difference between the low-frequency variation amount and the high-frequency variation amount, apply the weight to a high-frequency frame corresponding to the second frame, obtain an output frame corresponding to the second frame, based on the second frame and a high-frequency frame to which the weight is applied, and control the display to display the obtained output frame.

In a solid-state imaging element that compares a reference signal and a pixel signal with each other, a frame rate is improved.

A differential amplifier circuit amplifies a difference in potential between a pair of input nodes and outputs the difference from an output node. A transfer transistor transfers charge from a photoelectric conversion element to a floating diffusion layer. A gate of a source follower transistor is connected to the floating diffusion layer, and a source thereof is connected to one of the pair of input nodes. A measurement unit measures a gate-source voltage of the source follower transistor and supplies a measured value. A correction arithmetic unit arithmetically calculates a correction value for correcting a potential of the other one of the pair of input nodes based on the measured value.

A control section sets an exposure timing and an exposure period for imaging pixels for acquiring an imaging picture and light intensity detection pixels for detecting intensity of illumination light individually by an imaging section. A correction gain calculation section calculates a flicker correction gain for each of the imaging pixels on the basis of pixel signals generated by the imaging pixels and pixel signals generated by the light intensity detection pixels. A flicker correction section uses the flicker correction gain for each imaging pixel calculated by the correction gain calculation section to perform flicker correction of the imaging pixel. Accordingly, an imaging picture can be obtained on which the influence of fluctuation of the intensity of emission light is reduced irrespective of the positional relationship between an illumination apparatus and an imaging object.

A semiconductor device includes a first substrate provided with a first circuit unit, and a second substrate provided with a second circuit unit connected to the first circuit unit and a third circuit unit connected to the second circuit unit. The second circuit unit is configured to supply a driving voltage to the first circuit unit, and at least a part of driving voltages of the second circuit unit is configured to be supplied from the first substrate to the second circuit unit.

A semiconductor device includes a first substrate provided with a first circuit unit, and a second substrate provided with a second circuit unit connected to the first circuit unit and a third circuit unit connected to the second circuit unit. The second circuit unit is configured to supply a driving voltage to the first circuit unit, and at least a part of driving voltages of the second circuit unit is configured to be supplied from the first substrate to the second circuit unit.

The present disclosure provides an anti-flashlight circuit assembly and an image sensor. The anti-flashlight circuit assembly includes a plurality of flashlight detection units. Each flashlight detection unit includes: a first photoelectric detection module configured to monitor an optical signal in real time and output a corresponding electric signal; a first triggering generation module configured to generate a first triggering generation signal when the electric signal exceeds a predetermined threshold, and output the first triggering generation signal to a first interface logic module; and the first interface logic module configured to output a triggering state signal upon the receipt of the first triggering generation signal.

A pulse generator of an image sensor includes a delay cell including a plurality of transistors arranged in series between a power voltage and a ground, a stabilization capacitor, and a stabilization switch. The power voltage is supplied to a first terminal of a first transistor disposed first among the plurality of transistors, and a gate terminal of the first transistor is connected to a first node. An input voltage is supplied to a gate terminal of an n-th transistor disposed last among the plurality of transistors, and a ground voltage is supplied to a first terminal of the n-th transistor. The stabilization switch is disposed between a reference voltage input terminal providing a reference voltage and the first node. The stabilization switch is turned on by an input bias control signal to supply the reference voltage to the first node.

Systems and methods for imaging in the short wave infrared (SWIR), photodetectors with low dark current and associated circuits for reducing dark currents and methods for generating image information based on data of a photodetector array. A SWIR imaging system may include a pulsed illumination source operative to emit radiation pulses in the SWIR band towards a target resulting in reflected radiation from the target; (b) an imaging receiver including a plurality of Ge PDs operative to detect the reflected SWIR radiation and a controller, operative to control activation of the receiver for an integration time during which the accumulated dark current noise does not exceed the time independent readout noise.

Systems and methods for imaging in the short wave infrared (SWIR), photodetectors with low dark current and associated circuits for reducing dark currents and methods for generating image information based on data of a photodetector array. A SWIR imaging system may include a pulsed illumination source operative to emit radiation pulses in the SWIR band towards a target resulting in reflected radiation from the target; (b) an imaging receiver including a plurality of Ge PDs operative to detect the reflected SWIR radiation and a controller, operative to control activation of the receiver for an integration time during which the accumulated dark current noise does not exceed the time independent readout noise.

The effect of ambient light on a measurement taken by an imaging pixel may be reduced by employing two optical filters. The two filters may have narrow passbands that are close to each other but do not overlap. The first filter may allow ambient and active light to pass. The second filter may allow ambient light to pass but may block active light. The ambient and active light that passes through the first filter may cause electrical charge to be generated in a photodiode of the pixel. The ambient light that passes through the second filter and strikes another pixel element may control the amperage of an electrical current that depletes charge from the photodiode. For instance, the other element may be a photoresistor, the light-dependent resistance of which controls the amperage, or may be a second photodiode that generates charge that controls a transistor that controls the amperage.