A radiation imaging apparatus comprises a plurality of pixels arranged in a matrix pattern, each pixel including a signal generation portion configured to generate a signal based on accumulated charges and a holding portion configured to hold a signal output from the signal generation portion, a switch configured to commonly connect a predetermined number of pixels of the plurality of pixels to add the signals from the predetermined number of pixels, and a readout circuit configured to read out accumulation signals held in the holding portion over a plurality of times while changing an addition region by using the switch and performing pixel addition and obtain a plurality of images different in pixel addition count with respect to one time of charge accumulation.

A radiation imaging apparatus comprises a plurality of pixels arranged in a matrix pattern, each pixel including a signal generation portion configured to generate a signal based on accumulated charges and a holding portion configured to hold a signal output from the signal generation portion, a switch configured to commonly connect a predetermined number of pixels of the plurality of pixels to add the signals from the predetermined number of pixels, and a readout circuit configured to read out accumulation signals held in the holding portion over a plurality of times while changing an addition region by using the switch and performing pixel addition and obtain a plurality of images different in pixel addition count with respect to one time of charge accumulation.

Imaging devices and electronic apparatuses with one or more shared pixel structures are provided. The shared pixel structure includes a plurality of photoelectric conversion devices or photodiodes. Each photodiode in the shared pixel structure is located within a rectangular area. The shared pixel structure also includes a plurality of shared transistors. The shared transistors in the shared pixel structure are located adjacent the photoelectric conversion devices of the shared pixel structure. The rectangular area can have two short sides and two long sides, with the shared transistors located along one of the long sides. In addition, a length of one or more of the transistors can be extended in a direction parallel to the long side of the rectangular area.

Imaging devices and electronic apparatuses with one or more shared pixel structures are provided. The shared pixel structure includes a plurality of photoelectric conversion devices or photodiodes. Each photodiode in the shared pixel structure is located within a rectangular area. The shared pixel structure also includes a plurality of shared transistors. The shared transistors in the shared pixel structure are located adjacent the photoelectric conversion devices of the shared pixel structure. The rectangular area can have two short sides and two long sides, with the shared transistors located along one of the long sides. In addition, a length of one or more of the transistors can be extended in a direction parallel to the long side of the rectangular area.

The present invention relates to a method for correcting a packaged optical sensor array module, and the method for correcting a packaged optical sensor array module according to the present invention comprises the steps of: analyzing statistical characteristics of an optical sensor array with respect to light emitted from a standard light source having a predetermined characteristic value to extract a representative value, and calculating a first correction value for a measurement value according to the extracted representative value; and calculating a second correction value for a measured value of the optical sensor array that is corrected by the first correction value with respect to light emitted from an applied light source or light emitted by a fluorescence of the applied light source.

The present invention relates to a method for correcting a packaged optical sensor array module, and the method for correcting a packaged optical sensor array module according to the present invention comprises the steps of: analyzing statistical characteristics of an optical sensor array with respect to light emitted from a standard light source having a predetermined characteristic value to extract a representative value, and calculating a first correction value for a measurement value according to the extracted representative value; and calculating a second correction value for a measured value of the optical sensor array that is corrected by the first correction value with respect to light emitted from an applied light source or light emitted by a fluorescence of the applied light source.

A solid-state imaging apparatus includes pixel cells arranged in a matrix. Each pixel cell includes: a first photodiode that accumulates a signal charge generated by photoelectric conversion; a second photodiode that functions as a first holder that holds a signal charge that overflows from the first photodiode; a second holder; and a first transfer transistor that transfers the signal charge held in the second photodiode to the second holder.

A solid-state imaging apparatus includes pixel cells arranged in a matrix. Each pixel cell includes: a first photodiode that accumulates a signal charge generated by photoelectric conversion; a second photodiode that functions as a first holder that holds a signal charge that overflows from the first photodiode; a second holder; and a first transfer transistor that transfers the signal charge held in the second photodiode to the second holder.

An image sensor includes an array of multiple-photodiode cells, each photodiode coupled through a selection transistor to a floating diffusion of the cell, the selection transistors controlled by respective transfer lines, a reset, a sense source follower, and a read transistor coupled from the source follower to a data line. The array includes phase detection rows with phase detection cells and normal cells; and a compensation row of more cells. In embodiments, each phase detection row has cells with at least one photodiode coupled to the floating diffusion by selection transistors controlled by a transfer line separate from transfer lines of selection transistors of adjacent normal cells of the row. In embodiments, the compensation row has cells with photodiodes coupled to the floating diffusion by selection transistors controlled by a transfer line separate from transfer lines of selection transistors of adjacent normal cells of the compensation row.

An image sensor includes an array of multiple-photodiode cells, each photodiode coupled through a selection transistor to a floating diffusion of the cell, the selection transistors controlled by respective transfer lines, a reset, a sense source follower, and a read transistor coupled from the source follower to a data line. The array includes phase detection rows with phase detection cells and normal cells; and a compensation row of more cells. In embodiments, each phase detection row has cells with at least one photodiode coupled to the floating diffusion by selection transistors controlled by a transfer line separate from transfer lines of selection transistors of adjacent normal cells of the row. In embodiments, the compensation row has cells with photodiodes coupled to the floating diffusion by selection transistors controlled by a transfer line separate from transfer lines of selection transistors of adjacent normal cells of the compensation row.