The present technology relates to a semiconductor device and a manufacturing method therefor, a solid-state imaging element and electronic equipment that make it possible to suppress breakdown of a side wall insulating film by charge damage to suppress short-circuiting. The semiconductor device according to an aspect of the present technology includes a first semiconductor substrate on which a given circuit is formed, a second semiconductor substrate, and through electrodes that electrically connect the first semiconductor substrate and the second semiconductor substrate to each other. The through electrode is formed such that a through-hole is opened through a protection diode structure formed in the first semiconductor substrate, an insulating film is deposited on a side wall of the through-hole, and an electrode material is then filled inside the through-hole in which the insulating film is deposited. The present technology can be applied, for example, to a CMOS image sensor.

An unpolarized component image generating section generates unpolarized component image signals of specific and non-specific colors. A polarized component image generating section generates polarized component image signals of the specific and non-specific colors. A specific color polarization property detecting section detects polarization properties of the specific color using pixel signals of polarized or unpolarized pixels of the specific color having at least three polarization directions and pixel signals of polarized pixels having two polarization directions. An unpolarized color polarization property detecting section detects polarization properties of the non-specific color on the basis of the polarization properties of the specific color detected by the specific color polarization property detecting section, the pixel signals of the unpolarized pixels of the non-specific color, and the pixel signals of the polarized pixels of the non-specific color having fewer polarization directions than the polarized pixels of the specific color.

The present technology relates to a light receiving device, a method for manufacturing a light receiving device, and a distance measuring module, capable of improving sensitivity.

A light receiving device includes: a pixel array unit in which pixels each including a first tap that detects charges photoelectrically converted by a photoelectric conversion unit and a second tap that detects charges photoelectrically converted by the photoelectric conversion unit are two-dimensionally arranged in a matrix; an on-chip lens disposed for each pixel on a light incident surface side of a substrate; and a lens isolation portion that is formed in the same layer as the on-chip lens and isolates the on-chip lenses from each other. The present technology can be applied to, for example, a distance measuring system or the like that performs distance measurement by an indirect ToF method.

The present technology relates to a solid state imaging sensor that is possible to suppress the reflection of incident light with a wide wavelength band. A reflectance adjusting layer is provided on the substrate in an incident direction of the incident light with respect to the substrate such as Si and configured to adjust reflection of the incident light on the substrate. The reflectance adjusting layer includes a first layer formed on the substrate and a second layer formed on the first layer. The first layer includes a concavo-convex structure provided on the substrate and a material which is filled into a concave portion of the concavo-convex structure and has a refractive index lower than that of the substrate, and the second layer includes a material having a refractive index lower than that of the first layer. It is possible to reduce the reflection on the substrate such as Si by using the principle of the interference of the thin film. Such a technology can be applied to solid state imaging sensors.

The present technology relates to a solid state imaging sensor that is possible to suppress the reflection of incident light with a wide wavelength band. A reflectance adjusting layer is provided on the substrate in an incident direction of the incident light with respect to the substrate such as Si and configured to adjust reflection of the incident light on the substrate. The reflectance adjusting layer includes a first layer formed on the substrate and a second layer formed on the first layer. The first layer includes a concavo-convex structure provided on the substrate and a material which is filled into a concave portion of the concavo-convex structure and has a refractive index lower than that of the substrate, and the second layer includes a material having a refractive index lower than that of the first layer. It is possible to reduce the reflection on the substrate such as Si by using the principle of the interference of the thin film. Such a technology can be applied to solid state imaging sensors.

A solid-state imaging device includes a pixel array where pixels are arranged in a matrix. Each of the pixels includes a photoelectric conversion unit configured to generate a signal charge based on incident light, and an element isolation layer having light-shielding properties and surrounding a periphery of the photoelectric conversion unit. The element isolation layers of adjacent ones of the pixels in a row direction and a column direction are isolated from each other. A charge storage layer and a charge trapping layer are provided in each of regions between the element isolation layers of the adjacent ones of the pixels in the row direction and the column direction. The charge storage layer stores the signal charge. The charge trapping layer reduces incidence of light on the charge storage layer.

A semiconductor device capable of performing product-sum operation with high layout flexibility is provided. In the semiconductor device, a first layer, a second layer, and a third layer are formed in this order. The first layer includes a first cell, a first circuit, a first wiring, and a second wiring adjacent to the first wiring. The second layer includes a third wiring and a fourth wiring adjacent to the third wiring. The third layer includes an electrode and a sensor. The first circuit includes a switch. The sensor is electrically connected to the third wiring through the electrode and a first plug, a first terminal of the switch is electrically connected to the third wiring through a second plug, and a second terminal of the switch is electrically connected to the first cell through the first wiring. The electrode includes a region overlapping with the sensor and a region overlapping with the first plug. Note that the first to fourth wirings are parallel to each other, and the distance between the third wiring and the fourth wiring is greater than or equal to 0.9 times and less than or equal to 1.1 times the distance between the first wiring and the second wiring.

A depth sensing system includes a sensor having first and second sensor pixels to receive light from a surface. The system also includes a filter to allow transmission of full spectrum light to the first sensor pixel and visible light to the second sensor pixel while preventing transmission of infrared light to the second sensor pixel. The system further includes a processor to analyze the full spectrum light and the visible light to determine a depth of the surface. The filter is disposed between the sensor and the surface.

A solid-state imaging device including: a first substrate having a pixel unit, and a first semiconductor substrate and a first wiring layer; a second substrate with a circuit, and a second semiconductor substrate and a second wiring layer; and a third substrate with a circuit, and a third semiconductor substrate and a third wiring layer. The first and second substrates are bonded together such that the first wiring layer and the second semiconductor substrate are opposed to each other. The device includes a first coupling structure for electrically coupling a circuit of the first substrate and the circuit of the second substrate. The first coupling structure includes a via in which electrically-conductive materials are embedded in a first through hole that exposes a wiring line in the first wiring layer and in a second through hole that exposes a wiring line in the second wiring layer or a film-formed structure.

The present technology relates to a signal processing device and method, and a program that enable easier and more accurate failure detection. The signal processing device includes: an addition unit that adds test data for failure detection to valid data on which predetermined processing is to be performed, two or more samples processed in parallel in different paths having a same sample value in the test data; and a signal processing unit that performs the predetermined processing on the valid data and the test data that has been added to the valid data by a plurality of the paths. The present technology can be applied to in-car cameras.