In an information compression unit 311, in an image capturing unit 121 (221), among a plurality of pixel output units that receives object light that enters without passing through any of an image capturing lens and a pinhole, pixel outputs of at least two of the pixel output units have incident angle directivity modulated into different incident angle directivity according to an incident angle of the object light. The information compression unit 311 performs compression processing to reduce an amount of data of pixel output information generated by the image capturing unit 121 (221). For example, by computation of a difference between set reference value information and the pixel output information, linear calculation of a set calculation parameter and the pixel output information, and the like, the information compression unit 311 reduces a word length of the pixel output information, and reduces the amount of data of the pixel output information generated according to the object light that enters without passing through any of an image capturing lens and a pinhole.

An interference image acquisition apparatus includes a light source, a beam splitter, a second reflection mirror, an imager, and a first reflection mirror. A cell is placed on one side of a transparent material, and the first reflection mirror is placed on the other side of the transparent material. In a two-beam interferometer, an optical path difference between an optical path length of a first light beam reflected by the first reflection mirror and an optical path length of a second light beam reflected by the second reflection mirror is set to a coherence length of light output from the light source or less. The imager acquires an interference image in a state in which the cell is placed at a position conjugate to an imaging plane in a first optical system between the imaging plane and the first reflection mirror.

Provided is a structure 1 including an infrared light photoelectric conversion element 300 including an infrared light photoelectric conversion layer including a photoelectric conversion material that has a maximum absorption wavelength in an infrared range and generates a charge depending on absorbed light in the infrared range; a visible light photoelectric conversion element 200 that absorbs a light beam having a wavelength in a visible range and generates a charge depending on absorbed light; and an optical filter 400 that blocks and transmits a light beam of a predetermined wavelength, in which the infrared light photoelectric conversion element 300, the visible light photoelectric conversion element 200, and the optical filter 400 are provided on the same optical path, and each of the infrared light photoelectric conversion element 300 and the visible light photoelectric conversion element 200 is provided on an emission side of light from the optical filter 400. Provided is further an optical sensor and an image display device, each of which including the structure 1.

A photoelectric conversion device including an effective pixel region including a plurality of effective pixels and a peripheral region provided outside the effective pixel region, the photoelectric conversion device comprising: a wiring layer; an upper electrode; and a photoelectric conversion film provided extensively over the effective pixel region and the peripheral region, wherein each of the plurality of effective pixels includes a pixel electrode disposed between the wiring layer and the photoelectric conversion film in a depth direction, the peripheral region includes a conductive layer disposed between the wiring layer and the photoelectric conversion film in the depth direction, and the upper electrode and the conductive layer are at a same potential.

An image sensor includes a first semiconductor substrate provided with a pixel, including a photoelectric conversion unit that photoelectrically converts incident light to generate an electric charge, an accumulation unit that accumulates the electric charge generated by the photoelectric conversion unit, and a transfer unit that transfers the electric charge generated by the photoelectric conversion unit to the accumulation unit, and a second semiconductor substrate provided with a supply unit for the pixel, the supply unit supplying the transfer unit with a transfer signal to transfer the electric charge from the photoelectric conversion unit to the accumulation unit.

An image sensor includes a first semiconductor substrate provided with a pixel, including a photoelectric conversion unit that photoelectrically converts incident light to generate an electric charge, an accumulation unit that accumulates the electric charge generated by the photoelectric conversion unit, and a transfer unit that transfers the electric charge generated by the photoelectric conversion unit to the accumulation unit, and a second semiconductor substrate provided with a supply unit for the pixel, the supply unit supplying the transfer unit with a transfer signal to transfer the electric charge from the photoelectric conversion unit to the accumulation unit.

An image processor according to the present disclosure includes: an image segmentation processing section to generate a plurality of first map data on the basis of first image map data including a plurality of pixel values, the plurality of first map data having arrangement patterns of pixel values different from each other and including pixel values located at positions different from each other; an interpolation processing section to generate a plurality of second map data by determining a pixel value at a position where no pixel value is present in each of the plurality of first map data with use of interpolation processing; and a synthesis processing section to generate third map data by generating, on the basis of pixel values at positions corresponding to each other in the plurality of second map data, a pixel value at a position corresponding to the positions.

An image sensing system includes a pixel array, an analog-to-digital converter circuit, and an average calculator. The analog-to-digital converter circuit converts a first pixel signal to first pixel data and converts a second pixel signal to second pixel data. The average calculator generates a first average bit based on a first bit of the first pixel data and a first bit of the second pixel data during a first time and generates a second average bit based on a second bit of the first pixel data and a second bit of the second pixel data during a second time.

An image sensing system includes a pixel array, an analog-to-digital converter circuit, and an average calculator. The analog-to-digital converter circuit converts a first pixel signal to first pixel data and converts a second pixel signal to second pixel data. The average calculator generates a first average bit based on a first bit of the first pixel data and a first bit of the second pixel data during a first time and generates a second average bit based on a second bit of the first pixel data and a second bit of the second pixel data during a second time.

The present disclosure relates to an imaging apparatus and an imaging method, a camera module, and an electronic apparatus that are capable of detecting a failure in an imaging device having a structure in which a plurality of substrates are stacked.

The timing at which a row drive unit provided in a second substrate outputs a control signal for controlling accumulation and reading of pixel signals in a pixel array provided in a first substrate is compared with the timing at which the control signal output from the row drive unit is detected after passing through the pixel array. Depending on whether or not the timings coincides with each other, a failure is detected. The present disclosure can be applied to an imaging apparatus mounted on a vehicle.