The present technology relates to a solid-state imaging device that can improve imaging quality by reducing variation in the voltage of a charge retention unit, a method of driving the solid-state imaging device, and an electronic apparatus. A first photoelectric conversion unit generates and accumulates signal charge by receiving light that has entered a pixel, and photoelectrically converting the light. A first charge retention unit retains the generated signal charge. A first output transistor outputs the signal charge in the first charge retention unit as a pixel signal, when the pixel is selected by the first select transistor. A first voltage control transistor controls the voltage of the output end of the first output transistor. The present technology can be applied to pixels in solid-state imaging devices, for example.

The present technology relates to a solid-state imaging device that can improve imaging quality by reducing variation in the voltage of a charge retention unit, a method of driving the solid-state imaging device, and an electronic apparatus. A first photoelectric conversion unit generates and accumulates signal charge by receiving light that has entered a pixel, and photoelectrically converting the light. A first charge retention unit retains the generated signal charge. A first output transistor outputs the signal charge in the first charge retention unit as a pixel signal, when the pixel is selected by the first select transistor. A first voltage control transistor controls the voltage of the output end of the first output transistor. The present technology can be applied to pixels in solid-state imaging devices, for example.

A compressive/transform imager comprising a lens array positioned above input ports for collecting light into the input ports, waveguides routing the light from the input port to waveguide mixing regions (e.g. multi-mode interference couplers), and detectors for receiving outputs of the waveguide mixing regions.

An imaging device including a semiconductor substrate including a first surface that receives light from outside, and a second surface opposite to the first surface; a first transistor located on the second surface; and a photoelectric converter that faces the second surface and that receives light transmitted through the semiconductor substrate. The semiconductor substrate is a silicon substrate or a silicon compound substrate, and the photoelectric converter includes a first electrode electrically connected to the first transistor, a second electrode, and a photoelectric conversion layer that is located between the first electrode and the second electrode and that contains a material which absorbs light having a first wavelength longer than or equal to 1.1 μm, and the material has a quantum nanostructure.

To provide an electronic device capable of suppressing a decrease in resolution when the distance between an object to be imaged and an imaging unit is decreased. This electronic device includes a plurality of pixels, each of at least two pixels of the plurality of pixels including: a first lens that collects incident light; a first light shielding film portion having a first hole through which a part of the incident light that has been collected passes; and a photoelectric conversion unit configured to photoelectrically convert the incident light having passed through the first hole. The shape of the first hole with respect to the first light shielding film portion is different between a first pixel among the at least two pixels and a second pixel different from the first pixel among the at least two pixels.

A photosensor substrate (10) includes a plurality of sensor units (1). The sensor units (1) each include a switching element (2), a lower electrode (3) connected to the switching element (2), and a photoelectric conversion element (4). The photosensor substrate (10) includes lines (G and D) connected to the switching elements of the plurality of sensor units and led out of a sensor area (SA), and terminal parts (TG and TD) connected to the lines (G and D) led out of the sensor area (SA). The terminal parts (TG and TD) each include a protective layer (4a) overlapped with the line (G or D) led out of the sensor area and containing a material for the photoelectric conversion element (4), and a terminal conductor (6) connected to the line (G or D) via an opening (CH1) provided in the protective layer (4a).

Techniques provided herein are directed toward a simplified correlated double sampling (CDS) circuit that reduces the amount of components and potential noise sources utilized to two switches and a capacitor. Such CDS circuits can be used in conjunction with downstream programmable gain amp (PGA) circuitry to provide double sampling along with variable gain and/or other features. Embodiments may further utilize one or more analog muxes to reduce parasitic capacitance and increase accuracy.

A photoelectric converter includes: a first electrode; a second electrode; a first photoelectric conversion layer; a second photoelectric conversion layer; a first buffer layer; and a second buffer layer. The second electrode is disposed to be opposed to the first electrode. The first photoelectric conversion layer is provided between the first electrode and the second electrode. The first photoelectric conversion layer includes a first dye material and a first carrier transport material. The second photoelectric conversion layer is stacked on the second electrode side of the first photoelectric conversion layer between the first electrode and the second electrode. The second photoelectric conversion layer includes a second dye material and a second carrier transport material. The second dye material has a light absorption waveform different from a light absorption waveform of the first dye material. The first buffer layer has a first electrical conduction type. The first buffer layer is provided between the first electrode and the first photoelectric conversion layer. The second buffer layer has a second electrical conduction type different from the first electrical conduction type. The second buffer layer is provided between the second electrode and the second photoelectric conversion layer.

An imaging apparatus includes: an imaging element including a pixel array, a drive circuit of the pixel array, and a signal processing circuit as defined herein; a power supply; a power supply control circuit that controls electric power supplied to the imaging element from the power supply; and a processor, and the processor is configured to control the power supply control circuit to stop the supply of electric power to a part of circuits of the imaging element from the power supply at a first timing after completion of the readout of the signal, to resume the supply of electric power to the part of the circuits at a third timing before a second timing that is a start timing of the readout of the signal from the pixel array performed after the first timing, and to variably control an interval between the second timing and the third timing.

A detection device includes a pixel including a photodiode connected to a gate electrode of a first transistor, and a control circuit configured to control an operation of the pixel in a reset period (including a first and a second periods) for resetting the gate electrode, an exposure period for exposing the photo diode, and a read-out period (a fourth period) to read out a voltage associated with the exposure of the photodiode. The control circuit is configured to read out a first voltage during the first period, read out a second voltage during the second period after stopping a supply of a reset voltage to the gate electrode, read out a third voltage in the fourth period after the exposure period, output a difference value between the first and the second voltages as PUF-ID data and a difference value between the third and the second voltages as detection data.