A solid-state imaging device includes a plurality of pixel regions. Each of the plurality of pixel regions includes a first photoelectric conversion unit and a second photoelectric conversion unit. The second photoelectric conversion unit overlaps the first photoelectric conversion unit when viewed in a light incident direction. At least one of the first photoelectric conversion unit and the second photoelectric conversion unit is an embedded unit. The first photoelectric conversion unit and the second photoelectric conversion unit are electrically connected to mutually different types of readout circuits.

Color mixing between pixels of different colors is suppressed. A solid-state imaging device includes: a semiconductor layer including a plurality of photoelectric conversion sections partitioned by an isolation region; a shared on-chip lens arranged on a light incident surface side of the semiconductor layer, the shared on-chip lens being shared by the photoelectric conversion sections adjacent to each other with the isolation region interposed between the photoelectric conversion sections, and having a condensing point positioned in the isolation region; and a concave portion provided in an upper portion of the photoelectric conversion sections that share the shared on-chip lens on the light incident surface of the semiconductor layer.

Provided is an electronic device capable of suppressing an influence of internal reflected light in a device. An electronic device is provided with, sequentially from one side to the other side, a first polarizing plate that makes incident light linearly polarized light, a first ¼ wavelength plate a slow axis of which is different from an absorption axis of the first polarizing plate by 45 degrees or 135 degrees, a self-luminous element layer, a second ¼ wavelength plate a slow axis of which is in the same direction as the slow axis of the first ¼ wavelength plate, a second polarizing plate an absorption axis of which is orthogonal to the absorption axis of the first polarizing plate, and an imaging device that images light via the second polarizing plate.

An imaging device includes a photoelectric conversion film and an electrode. The photoelectric conversion film converts light to charge. The electrode collects the charge. The electrode includes two or more layers. The two or more layers include a first layer containing tantalum nitride. An uppermost layer among the two or more layers contains a metal nitride.

Provided are a first photoelectric conversion unit, a second photoelectric conversion unit having a smaller electric charge amount to be converted per unit time than the first photoelectric conversion unit, a charge accumulation unit that accumulates an electric charge generated by the second photoelectric conversion unit, a charge voltage conversion unit, a first transfer gate unit that transfers an electric charge from the first photoelectric conversion unit to the charge voltage conversion unit, a second transfer gate unit that couples potentials of the charge voltage conversion unit and the charge accumulation unit, a third transfer gate unit that transfers an electric charge from the second photoelectric conversion unit to the charge accumulation unit, an overflow path formed under a gate electrode of the third transfer gate unit and transfers an electric charge overflowing from the second photoelectric conversion unit to the charge accumulation unit, and a light reducing unit that reduces light to enter the second photoelectric conversion unit.

An image sensor 30 includes an image information processing unit 4 that forms integrated information in which image sensor identification information capable of identifying the image sensor 30 and image information obtained by an analog/digital conversion unit 25 are associated with each other, and an image information output unit 24 that outputs the integrated information to an external unit.

The imaging apparatus includes: a processor; and an imaging element that has column signal lines, which are for reading out signals and extend in a first direction, and that has a first pixel group and a second pixel group arranged in the first direction, the first pixel group including phase difference pixels and imaging pixels arranged in a second direction intersecting the first direction and the second pixel group including imaging pixels arranged in the second direction. The processor is configured to set one of a first exposure time, during which the first pixel group is exposed, and a second exposure time, during which the second pixel group is exposed, shorter than the other, and determine which of the first exposure time and the second exposure time is made shorter than the other on the basis of information of a subject image.

An image pickup unit includes a first optical device including a lens and a spacer arranged around the lens and having a circular inner circumference, the spacer having a thickness continuously decreasing outward, an adhesive layer disposed on an adhesive surface of the spacer of the first optical device, a second optical device adhered to the first optical device by the adhesive layer, and an imager receiving light condensed by an optical system including the first optical device and the second optical device.

Provided are a solid-state imaging apparatus, a method for manufacturing a solid-state imaging apparatus, and an electronic apparatus equipped with a solid-state imaging apparatus that can reduce the size of a semiconductor chip in such a way that one semiconductor substrate having a logic circuit controls two sensors. Provided is a solid-state imaging apparatus including a first sensor, a first semiconductor substrate having a memory, a second semiconductor substrate having a logic circuit, and a second sensor, in which the first sensor, the first semiconductor substrate, the second semiconductor substrate, and the second sensor are arranged in this order.

An imaging device includes a semiconductor substrate including a first surface receiving light from outside, and a second surface opposite to the first surface, a first transistor on the second surface, and a photoelectric converter facing the second surface and receiving light through the semiconductor substrate. The semiconductor substrate is a silicon or silicon compound substrate. The photoelectric converter includes a first electrode electrically connected to the first transistor, a second electrode, and a photoelectric conversion layer located between the first and second electrodes and containing a material absorbing light having a wavelength 1.1 μm or longer. The first electrode is located between the second surface and the photoelectric conversion layer. A spectral sensitivity of the material in a region of 1.0 μm or longer and shorter than 1.1 μm is 0% to 5% of the maximum value of a spectral sensitivity of the material in 1.1 μm or longer.