To provide a solid-state image sensor in which two or more semiconductor chips are bonded together without voids occurring in their bonding surfaces despite the conductive films bonded together at a high areal ratio. The solid-state image sensor includes at least a first semiconductor chip carrying thereon one or more than one of a first conductor and a pixel array, and a second semiconductor chip which bonds to the first semiconductor chip and carries thereon one or more than one of a second conductor and a logic circuit, with the first semiconductor chip and the second semiconductor chip bonding together in such a way that the first conductor and the second conductor overlap with each other and are electrically connected to each other, and the bonding occurring such that the first conductor and the second conductor differ from each other in the area of their bonding surfaces.

A solid-state imaging device capable of obtaining an image having high image quality is provided. The solid-state imaging device includes a pixel unit which is configured such that a plurality of unit pixels are disposed in a two-dimensional array, the plurality of unit pixels being configured to include a plurality of photoelectric conversion units and a plurality of microlenses, the plurality of photoelectric conversion units being formed on a substrate and generating signal charges corresponding to the amount of incident light, and the plurality of microlenses being configured such that one microlens is formed for one photoelectric conversion unit group among a plurality of photoelectric conversion unit groups each of which is constituted by at least two or more adjacent photoelectric conversion units insulated from each other by an impurity layer, and guiding the incident light to each of a plurality of the photoelectric conversion unit groups. In addition, the solid-state imaging device includes a plurality of light-absorbing layers that are formed between the microlenses and the substrate and absorb a portion of the incident light guided to the photoelectric conversion unit groups by the microlenses.

A solid-state imaging device according to an embodiment of the present disclosure includes: a plurality of photoelectric converters that is stacked on a semiconductor substrate, and has wavelength selectivities different from each other; and a wiring line that is formed on the semiconductor substrate, and is electrically coupled to the plurality of photoelectric converters. Each of the photoelectric converters includes a photoelectric conversion film, and a first electrode and a second electrode that are disposed with the photoelectric conversion film interposed therebetween. The wiring line extends in a direction normal to the semiconductor substrate, and includes a vertical wiring line formed in contact with the second electrode of each of the photoelectric converters.

A solid-state imaging element (1) according to the present disclosure includes a photoelectric conversion unit (42) that converts incident light (L) into an electrical signal, and a stacked film group (43) provided on a light incident side of the photoelectric conversion unit (42). The stacked film group (43) is formed by stacking a plurality of stacked films (43a) formed by stacking thin films of different materials (M1, M2). An entire film thickness of the stacked film (43a) is smaller than a wavelength of the incident light (L).

An image capture control apparatus includes reception unit configured to receive an instruction for ending recording of a moving image; and control unit configured to, when the instruction for ending is issued, perform control, in a case of a first shooting mode in which an image is displayed in a state being visible from a subject, to display an item for deleting a portion at a beginning or at an end of the moving image, in response to the instruction for ending, and to record the moving image to a recording medium in a state where the portion of the moving image has been deleted, and perform control, in a case of a second shooting mode, to not display the item, even when the instruction for ending has been given.

An imaging device having a color imaging function and an infrared imaging function is provided. The imaging device has a structure in which a first photoelectric conversion device and a second photoelectric conversion device are stacked, and the second photoelectric conversion device generates electric charge by absorbing infrared light and transmits light having a wavelength of a higher energy than that of infrared light. The first photoelectric conversion device is positioned to overlap with the second photoelectric conversion device, and generates electric charge by absorbing light (visible light) passing through the second photoelectric conversion device. Thus, a subpixel for color imaging and a subpixel for infrared imaging can be positioned to overlap with each other, and an infrared imaging function can be added without a decrease in the definition of color imaging.

The sensitivity of an image sensor is improved.

The image sensor includes a plurality of pixels and a light-blocking wall. The plurality of pixels included in the image sensor each includes a photoelectric conversion unit disposed on a semiconductor substrate and photoelectrically converting incident light that is irradiated, and an on-chip lens that focuses the incident light onto the photoelectric conversion unit. The light-blocking wall included in the image sensor is disposed adjacent to the semiconductor substrate at a boundary between the plurality of pixels and configured such that a side of the light-blocking wall that is irradiated with the incident light has a tapered-shape cross-section, the light-blocking wall blocking the incident light.

The present disclosure relates to an image pickup device and an electronic apparatus that enable warping of a substrate to be suppressed. A first structural body including a pixel array unit is layered with second structural body including an input/output circuit unit and outputting a pixel signal output from the pixel to the outside of the device, and a signal processing circuit; and a signal output external terminal and a signal input external terminal are arranged below the pixel array unit, the signal output external terminal being connected to the outside via a first through-via penetrating through a semiconductor substrate in the second structural body, the signal input external terminal being connected to the outside via a second through-via connected to an input circuit unit and penetrating through the semiconductor substrate. The signal output external terminal is electrically connected to the first through-via via a first rewiring line, the signal input external terminal is electrically connected to the second through-via via a second rewiring line, and a third rewiring line being electrically independent is arranged in a layer in which the first rewiring line and the second rewiring line are arranged. The present disclosure can be applied to, for example, the image pickup device, and the like.

Noise, color mixture, and the like are suppressed while reducing a restriction on layout disposition. An imaging apparatus includes a semiconductor substrate, a photoelectric conversion unit which is provided in the semiconductor substrate and generates charge corresponding to the amount of received light by photoelectric conversion, a charge holding unit which is disposed on a side closer to a first surface of the semiconductor substrate than to the photoelectric conversion unit, and holds the charge transferred from the photoelectric conversion unit, a charge transfer unit which transfers the charge from the photoelectric conversion unit to the charge holding unit, a vertical electrode which is disposed in a depth direction of the semiconductor substrate, the vertical electrode transmitting the charge generated by the photoelectric conversion unit to the charge transfer unit, and a first light control member which is disposed at a position overlapping the vertical electrode when the semiconductor substrate is seen in a plan view from a normal direction of the first surface, and is provided in a pixel region without straddling a boundary between pixels.

Provided herein may be an image sensing device and a method of operating the same. An image sensing device may include an image sensor obtaining an image using a plurality of pixels, and an image processor configured to use pixel values included in a region of interest included in the image to generate a gain table including gain table values corresponding to a first resolution, convert the gain table into a target table including target table values corresponding to a second resolution which is lower than the first resolution, and cancel noise included in the image based on the target table.