Provided are a resonator, a method of manufacturing the resonator, and a strain sensor and a sensor array including the resonator. The resonator is provided to extend in a lengthwise direction from a support. The resonator includes a single crystal material and is provided to extend in a crystal orientation that satisfies at least one from among a Young's modulus and a Poisson's ratio, from among crystal orientations of the single crystal material.

A piezoelectric microelectromechanical systems microphone is provided comprising a substrate including at least one wall defining a cavity, the at least one wall defining an anchor region around a perimeter, a piezoelectric film layer forming a membrane, the piezoelectric film layer being supported at the anchor region by a spring region, and an electrode disposed over the piezoelectric film layer. A method of manufacturing such a MEMS microphone is also provided.

A piezoelectric microelectromechanical systems microphone is provided comprising a substrate including at least one wall defining a cavity, the at least one wall defining an anchor region around a perimeter, a piezoelectric film layer forming a membrane, the piezoelectric film layer being supported at the anchor region by a spring region, and an electrode disposed over the piezoelectric film layer. A method of manufacturing such a MEMS microphone is also provided.

A contact sensor for the repeatable detection of small, high frequency mechanical vibrations in external systems is presented herein. The sensor includes a metal housing with an attachment device at one end and an output at the other end. Inside the metal housing is a core assembly that includes a piezo transducer assembly suspended or isolated between an actuator and a biasing device. The actuator may be in the form of a ceramic sphere that sits at least partially within a recess on the inside of the housing and is in physical contact with the piezo transducer assembly. The biasing device may be in the form of a spring that causes the piezo transducer assembly to be pressed against the actuator at a contestant and known amount of tension.

A contact sensor for the repeatable detection of small, high frequency mechanical vibrations in external systems is presented herein. The sensor includes a metal housing with an attachment device at one end and an output at the other end. Inside the metal housing is a core assembly that includes a piezo transducer assembly suspended or isolated between an actuator and a biasing device. The actuator may be in the form of a ceramic sphere that sits at least partially within a recess on the inside of the housing and is in physical contact with the piezo transducer assembly. The biasing device may be in the form of a spring that causes the piezo transducer assembly to be pressed against the actuator at a contestant and known amount of tension.

A directional acoustic sensor includes: a support including a first support portion and a second support portion that are separated from each other and face each other; a plurality of first resonators extending in a length direction thereof from the first support portion of the support; and a plurality of second resonators extending in the length direction thereof from the second support portion of the support and facing the plurality of first resonators, wherein each first resonator of the plurality of first resonators has a first end, wherein each second resonator of the plurality of second resonators has a second end, and wherein, in a first resonator arrangement of a region where the plurality of first resonators and the plurality of second resonators face each other, the first ends of the plurality of first resonators and the second ends of the plurality of second resonators form an intersecting structure.

Aspects of acoustic transducers are described. One aspect is a microelectromechanical (MEMS) transducer comprising a substrate and multiple cantilevered beams. A first cantilevered beam comprises a first protrusion and a first piezoelectric structure, where the first piezoelectric structure comprises a first deflection end and a first fixed end, where the first fixed end is coupled to the substrate, and where the first deflection end is cantilevered away from the substrate. The first cantilevered beam is separated from a second cantilevered beam by a gap. The first protrusion is disposed at the first deflection end and increases a thickness of the first cantilevered beam along the gap at the first deflection end. A second protrusion of the second beam is disposed at a second deflection end and increases a thickness of the second cantilevered beam along the gap at the second deflection end.

Provided is a piezoelectric ceramics including crystal grains each including: a first region that is formed of a perovskite-type metal oxide having a crystal structure in which a central element of a unit cell is located at an asymmetrical position; and a second region that is formed of a perovskite-type metal oxide having a crystal structure in which a central element of a unit cell is located at a symmetrical position, and that is present inside the first region, wherein a ratio of a cross-sectional area of the second region to a cross-sectional area of the piezoelectric ceramics is 0.1% or less.

Provided is a piezoelectric ceramics including crystal grains each including: a first region that is formed of a perovskite-type metal oxide having a crystal structure in which a central element of a unit cell is located at an asymmetrical position; and a second region that is formed of a perovskite-type metal oxide having a crystal structure in which a central element of a unit cell is located at a symmetrical position, and that is present inside the first region, wherein a ratio of a cross-sectional area of the second region to a cross-sectional area of the piezoelectric ceramics is 0.1% or less.

A digital microphone includes at least one integrator; a state detection and parameter control component directly coupled to an output of the integrator; and a signal processing component coupled to an output of the state detection and parameter control component, wherein a parameter of the signal processing component includes a first value in a first operational mode and a second value in a second operational mode different from the first operational mode.