The application describes MEMS transducer structures comprising a membrane structure having a flexible membrane layer and at least one electrode layer. The electrode layer is spaced from the flexible membrane layer such that at least one air volume extends between the material of the electrode layer and the membrane layer. The electrode layer is supported relative to the flexible membrane by means of a support structure which extends between the first electrode layer and the flexible membrane layer.

A micromechanical structure in accordance with various embodiments may include: a substrate; and a functional structure arranged at the substrate; wherein the functional structure includes a functional region which is deflectable with respect to the substrate responsive to a force acting on the functional region; and wherein at least a section of the functional region has an elastic modulus in the range from about 5 GPa to about 70 GPa.

A micromechanical structure in accordance with various embodiments may include: a substrate; and a functional structure arranged at the substrate; wherein the functional structure includes a functional region which is deflectable with respect to the substrate responsive to a force acting on the functional region; and wherein at least a section of the functional region has an elastic modulus in the range from about 5 GPa to about 70 GPa.

According to one embodiment, a strain and pressure sensing device includes a semiconductor circuit unit and a sensing unit. The semiconductor circuit unit includes a semiconductor substrate and a transistor. The transistor is provided on a semiconductor substrate. The sensing unit is provided on the semiconductor circuit unit, and has space and non-space portions. The non-space portion is juxtaposed with the space portion. The sensing unit further includes a movable beam, a strain sensing element unit, and first and second buried interconnects. The movable beam has fixed and movable portions, and includes first and second interconnect layers. The fixed portion is fixed to the non-space portion. The movable portion is separated from the transistor and extends from the fixed portion into the space portion. The strain sensing element unit is fixed to the movable portion. The first and second buried interconnects are provided in the non-space portion.

According to one embodiment, a strain and pressure sensing device includes a semiconductor circuit unit and a sensing unit. The semiconductor circuit unit includes a semiconductor substrate and a transistor. The transistor is provided on a semiconductor substrate. The sensing unit is provided on the semiconductor circuit unit, and has space and non-space portions. The non-space portion is juxtaposed with the space portion. The sensing unit further includes a movable beam, a strain sensing element unit, and first and second buried interconnects. The movable beam has fixed and movable portions, and includes first and second interconnect layers. The fixed portion is fixed to the non-space portion. The movable portion is separated from the transistor and extends from the fixed portion into the space portion. The strain sensing element unit is fixed to the movable portion. The first and second buried interconnects are provided in the non-space portion.

A microphone includes a microelectromechanical system (MEMS) die configured to sense an acoustic signal, a base, and a lid. The base has a top surface and a bottom surface. The bottom surface includes a first electrical pad and a second electrical pad. The first electrical pad and the second electrical pad are configured to transmit an electrical signal indicative of the acoustic signal. The lid has a top surface and a bottom surface. The lid includes a cavity that surrounds the MEMS die. The top surface of the lid includes a third electrical pad and a fourth electrical pad. The first electrical pad and the third electrical pad are electrically connected, and the second electrical pad and the fourth electrical pad are electrically connected.

A microphone includes a microelectromechanical system (MEMS) die configured to sense an acoustic signal, a base, and a lid. The base has a top surface and a bottom surface. The bottom surface includes a first electrical pad and a second electrical pad. The first electrical pad and the second electrical pad are configured to transmit an electrical signal indicative of the acoustic signal. The lid has a top surface and a bottom surface. The lid includes a cavity that surrounds the MEMS die. The top surface of the lid includes a third electrical pad and a fourth electrical pad. The first electrical pad and the third electrical pad are electrically connected, and the second electrical pad and the fourth electrical pad are electrically connected.

An integrated circuit includes a first amplifier and a second amplifier. A first impedance matching circuit is coupled to the first amplifier, a first charge pump, and a single MEMS transducer. A second impedance matching circuit is coupled to the second amplifier, a second charge pump, and to the single MEMS transducer. A first capacitive load as measured at an input of first amplifier, and a second capacitive load as measured at an input of the second amplifier exist. The first capacitive load and the second capacitive load are balanced with respect to each other. A single pressure change causes the single MEMS transducer to create a first electrical signal and a second electrical signal. Both the first electrical signal and the second electrical signal are matched or approximately matched in magnitude, and 180 degrees or approximately 180 degrees out of phase with respect to each other.

An integrated circuit includes a first amplifier and a second amplifier. A first impedance matching circuit is coupled to the first amplifier, a first charge pump, and a single MEMS transducer. A second impedance matching circuit is coupled to the second amplifier, a second charge pump, and to the single MEMS transducer. A first capacitive load as measured at an input of first amplifier, and a second capacitive load as measured at an input of the second amplifier exist. The first capacitive load and the second capacitive load are balanced with respect to each other. A single pressure change causes the single MEMS transducer to create a first electrical signal and a second electrical signal. Both the first electrical signal and the second electrical signal are matched or approximately matched in magnitude, and 180 degrees or approximately 180 degrees out of phase with respect to each other.

In various embodiments, a circuit arrangement is provided. The circuit arrangement includes a sensor set up to provide an analogue signal, an analogue/digital converter set up to receive the analogue signal and to provide a first signal, and a first filter set up to receive a signal based on the first signal and to provide a second signal. The first filter is set up in such a manner that the second signal is allowed through without amplification or substantially without amplification in a frequency range of approximately 20 Hz to approximately 10 kHz, and the second signal has a gain of greater than 0 dB at least above a predefined frequency which is greater than approximately 20 kHz.