Systems and apparatuses for a MEMS device. The MEMS device includes a diaphragm and a backplate spaced a distance from the diaphragm forming an air gap therebetween. The backplate includes a first surface facing toward the diaphragm and an opposing second surface facing away from the diaphragm. The first surface and the opposing second surface of the backplate cooperatively define a plurality of through-holes that extend through the backplate allowing air from the air gap to flow therethrough. Each of the plurality of through-holes include a first aperture disposed along the first surface, a second aperture disposed along the opposing second surface, and a sidewall extending between the first surface and the opposing second surface. The first aperture and the second aperture have different dimensions.

This document describes techniques and apparatuses directed at detecting and preventing light-based injection attacks. In aspects, a computing device includes executable instructions of an input manager, an audio sensor having subtracting circuitry, and a light sensor. One or more processors executing instructions of the input manager is configured to receive and analyze signals generated by the audio sensor, the light sensor, and the subtracting circuit. Upon analysis, the input manager can detect and prevent light-based injection attacks.

This document describes techniques and apparatuses directed at detecting and preventing light-based injection attacks. In aspects, a computing device includes executable instructions of an input manager, an audio sensor having subtracting circuitry, and a light sensor. One or more processors executing instructions of the input manager is configured to receive and analyze signals generated by the audio sensor, the light sensor, and the subtracting circuit. Upon analysis, the input manager can detect and prevent light-based injection attacks.

A MEMS microphone includes a substrate having a cavity, a diaphragm comprising a first electrode layer disposed above the cavity, and a back plate comprising a second electrode layer disposed above the first electrode layer and a support layer disposed on the second electrode layer. The second electrode layer includes a conductive layer pattern, and a reinforcing pattern configured to surround the conductive layer pattern and to increase structural rigidity of the support layer.

A MEMS microphone includes a substrate having a cavity, a diaphragm comprising a first electrode layer disposed above the cavity, and a back plate comprising a second electrode layer disposed above the first electrode layer and a support layer disposed on the second electrode layer. The second electrode layer includes a conductive layer pattern, and a reinforcing pattern configured to surround the conductive layer pattern and to increase structural rigidity of the support layer.

A MEMS microphone is disclosed. The MEMS microphone includes an encapsulation structure provided with an accommodation space; a MEMS chip for detecting sound signal accommodated in the accommodation space; an ASIC chip received in the accommodation space. The ASIC chip includes a signal processing module connected to MEMS chip for processing the sound signal detected by the MEMS chip and outputting the processed sound signal. The MEMS microphone further includes a temperature detection module for detecting temperature signal and outputting the temperature signal.

This invention describes the structure and function of an integrated multi-sensing system. Integrated systems described herein may be configured to form a microphone, pressure sensor, gas sensor, multi-axis gyroscope or accelerometer. The sensor uses a variety of different Field Effect Transistor technologies (horizontal, vertical, Si nanowire, CNT, SiC and III-V semiconductors) in conjunction with MEMS based structures such as cantilevers, membranes and proof masses integrated into silicon substrates. It also describes a configurable method for tuning the integrated system to specific resonance frequency using electronic design.

This invention describes the structure and function of an integrated multi-sensing system. Integrated systems described herein may be configured to form a microphone, pressure sensor, gas sensor, multi-axis gyroscope or accelerometer. The sensor uses a variety of different Field Effect Transistor technologies (horizontal, vertical, Si nanowire, CNT, SiC and III-V semiconductors) in conjunction with MEMS based structures such as cantilevers, membranes and proof masses integrated into silicon substrates. It also describes a configurable method for tuning the integrated system to specific resonance frequency using electronic design.

According to one embodiment, a strain and pressure sensing device includes a semiconductor circuit unit and a sensing unit. The semiconductor circuit unit includes a semiconductor substrate and a transistor. The transistor is provided on a semiconductor substrate. The sensing unit is provided on the semiconductor circuit unit, and has space and non-space portions. The non-space portion is juxtaposed with the space portion. The sensing unit further includes a movable beam, a strain sensing element unit, and first and second buried interconnects. The movable beam has fixed and movable portions, and includes first and second interconnect layers. The fixed portion is fixed to the non-space portion. The movable portion is separated from the transistor and extends from the fixed portion into the space portion. The strain sensing element unit is fixed to the movable portion. The first and second buried interconnects are provided in the non-space portion.

According to one embodiment, a strain and pressure sensing device includes a semiconductor circuit unit and a sensing unit. The semiconductor circuit unit includes a semiconductor substrate and a transistor. The transistor is provided on a semiconductor substrate. The sensing unit is provided on the semiconductor circuit unit, and has space and non-space portions. The non-space portion is juxtaposed with the space portion. The sensing unit further includes a movable beam, a strain sensing element unit, and first and second buried interconnects. The movable beam has fixed and movable portions, and includes first and second interconnect layers. The fixed portion is fixed to the non-space portion. The movable portion is separated from the transistor and extends from the fixed portion into the space portion. The strain sensing element unit is fixed to the movable portion. The first and second buried interconnects are provided in the non-space portion.