A piezoelectric microelectromechanical systems (MEMS) transducer that can operate as a microphone (e.g., contact microphone) or a speaker is presented herein. The piezoelectric MEMS transducer includes a substrate, a proof mass and folded displacement sensing structures. Each folded displacement sensing structure comprises a continuous beam, a first piezoelectric stress sensor coupled to a first portion of the continuous beam, and a second piezoelectric stress sensor coupled to a second portion of the continuous beam. The first portion of the continuous beam is coupled to a respective portion of the proof mass, and the second portion of the continuous beam is coupled to a respective portion of the substrate. The first and second portions of the continuous beam come together at an acute angle. The first and second piezoelectric stress sensors output stress information responsive to a stress induced in the continuous beam by displacement of the proof mass.

Disclosed herein is a MEMS ASIC. In some examples, the MEMS ASIC can include a MEMS, an analog front end (AFE) amplifier, an analog-to-digital converter (ADC), an overload detector, and a high-ohmic (HO) block. The HO block and the MEMS can form a high-pass filter (HPF). The impedance of the HO block can be related to the DC operating level of the AFE amplifier and the cutoff frequency of the HPF. In some examples, an overload event can occur, and the overload detector can be configured to adjust the impedance of the HO block to reduce the settling time of the MEMS ASIC. Methods of using the MEMS ASIC to reduce the settling time of the MEMS ASIC due to an overload event are disclosed herein.

Disclosed herein is a MEMS ASIC. In some examples, the MEMS ASIC can include a MEMS, an analog front end (AFE) amplifier, an analog-to-digital converter (ADC), an overload detector, and a high-ohmic (HO) block. The HO block and the MEMS can form a high-pass filter (HPF). The impedance of the HO block can be related to the DC operating level of the AFE amplifier and the cutoff frequency of the HPF. In some examples, an overload event can occur, and the overload detector can be configured to adjust the impedance of the HO block to reduce the settling time of the MEMS ASIC. Methods of using the MEMS ASIC to reduce the settling time of the MEMS ASIC due to an overload event are disclosed herein.

A first electrode of a MEMS device can be oriented lengthwise along and parallel to an axis, and can have a first end and a second end. A second electrode can be oriented lengthwise along and parallel to the axis and can have a first end and a second end. A third electrode can be oriented lengthwise along and parallel to the axis and can have a first end and a second end. The first, second, and third electrodes can each be located at least partially within an aperture of a plurality of apertures of a solid dielectric that can surround the second electrode second end and the third electrode first end. The second electrode first end and the third electrode second end can be located outside of the solid dielectric.

A MEMS microphone includes a substrate, a diaphragm disposed over the substrate to cover the cavity, the diaphragm defining an air gap together with the back plate, and the diaphragm being spaced apart from the substrate, a back plate disposed over the diaphragm and in the vibration area, an upper insulation layer to cover the back plate, a plurality of chamber portions provided in the supporting area, a lower insulation layer provided under the upper insulation layer and on the substrate, and an intermediate insulation layer provided between the lower insulation layer and the upper insulation layer and disposed further from the vibration area than the chamber portions.

A MEMS microphone includes a substrate including a vibration area defining a cavity, a supporting area surrounding the vibration area, and a peripheral area surrounding the supporting area, a diaphragm disposed over the substrate to cover the cavity, the diaphragm being spaced apart from the substrate to be configured to sense an acoustic pressure to generate a corresponding displacement, an anchor completely surrounding an end portion of the diaphragm, the anchor being fixed to an upper surface of the substrate to support the diaphragm from the substrate, and a back plate disposed over the diaphragm and in the vibration area, and the back plate being spaced apart from the diaphragm to form an air gap and having a plurality of acoustic holes.

A MEMS microphone includes a substrate including a vibration area defining a cavity, a supporting area surrounding the vibration area, and a peripheral area surrounding the supporting area, a diaphragm disposed over the substrate to cover the cavity, the diaphragm being spaced apart from the substrate to be configured to sense an acoustic pressure to generate a corresponding displacement, an anchor completely surrounding an end portion of the diaphragm, the anchor being fixed to an upper surface of the substrate to support the diaphragm from the substrate, and a back plate disposed over the diaphragm and in the vibration area, and the back plate being spaced apart from the diaphragm to form an air gap and having a plurality of acoustic holes.

A MEMS microphone includes a substrate, a diaphragm disposed over the substrate to cover the cavity, the diaphragm being spaced apart from the substrate, a back plate disposed over the diaphragm and in the vibration area, and the back plate being spaced apart from the diaphragm to form an air gap, an upper insulation layer to cover the back plate, the upper insulation layer being configured to hold the back plate to make the back plate being spaced apart from the diaphragm, a plurality of first acoustic holes penetrating through the back plate and the upper insulation layer, and a plurality of second acoustic holes provided to penetrate through only the upper insulation layer, wherein the second acoustic holes have an area ratio per unit area greater than that of the first acoustic holes.

A MEMS microphone includes a substrate, a diaphragm disposed over the substrate to cover the cavity, the diaphragm being spaced apart from the substrate, a back plate disposed over the diaphragm and in the vibration area, and the back plate being spaced apart from the diaphragm to form an air gap, an upper insulation layer to cover the back plate, the upper insulation layer being configured to hold the back plate to make the back plate being spaced apart from the diaphragm, a plurality of first acoustic holes penetrating through the back plate and the upper insulation layer, and a plurality of second acoustic holes provided to penetrate through only the upper insulation layer, wherein the second acoustic holes have an area ratio per unit area greater than that of the first acoustic holes.

The present disclosure relates to a sensor assembly (100) comprising: a base (102) having a host-device interface (104), a lid (108) mounted on the base (102) to form a housing (110), the lid (108) having an insulative structural core (112) between an inner metal skin (114) and an outer metal skin (116); and a transduction element (118) disposed in the housing (112). Advantageously, the lid (108) of the sensor assembly (100) can help to minimize and reduce undesirable thermo-acoustic effects produced by external environmental conditions that may result in acoustic artifacts.