H04R23/006

Micro-electro-mechanical acoustic transducer device with improved detection features and corresponding electronic apparatus

Described herein is a MEMS acoustic transducer device provided with a micromechanical detection structure that detects acoustic-pressure waves and supplies a transduced electrical quantity, and with an integrated circuit operatively coupled to the micromechanical detection structure and having a reading module that generates at output an audio signal as a function of the transduced electrical quantity. The integrated circuit is further provided with a recognition module, which recognizes a of sound activity event associated to the transduced electrical quantity. The MEMS acoustic transducer has an output that supplies at output a data signal that carries information regarding recognition of the sound activity event.

Foldable display device and sound providing method thereof

A foldable display device includes: a first display panel including a first substrate and a first pixel array layer which is disposed on a first surface of the first substrate; a second display panel including a second substrate and a second pixel array layer which is disposed on a first surface of the second substrate; and a first sound generator disposed between a second surface of the first display panel opposite to the first surface of the first display panel and a second surface of the second display panel opposite to the first surface of the second display panel, where the first sound generator outputs first sound by vibrating at least one of the first and second display panels.

FET BASED SENSORY SYSTEMS
20220153572 · 2022-05-19 ·

A sensor including one or more transistors; and one or more sensing elements, wherein an edge behaves as moving gate of said one or more transistors, an electric field is applied to said edge, said one or more transistors is/are biased, said one or more sensing elements is/are flexible, source and drain wells of said one or more transistors can be coplanar or stacked, said edge can move in a lateral or a parallel direction with respect to a transistor current, said edge can move in a vertical or a perpendicular direction with respect to said transistor current, and the magnitude of the change in said drain current determines the sensitivity.

Directional acoustic sensor, and methods of adjusting directional characteristics and attenuating acoustic signal in specific direction using the same

Disclosed are a directional acoustic sensor, a method of adjusting directional characteristics using the directional acoustic sensor, and a method of attenuating an acoustic signal in a specific direction using the directional acoustic sensor. The directional acoustic sensor includes a plurality of resonance units arranged to have different directionalities and a signal processor configured to adjust directional characteristics by calculating at least one of a sum of and a difference between outputs of the resonance units. In this state, the signal processor attenuates an acoustic signal in a specific direction by using a plurality of directional characteristics obtained by calculating at least one of the sum of and the difference between the outputs of the resonance units at a certain ratio.

MICRO-ELECTRO-MECHANICAL ACOUSTIC TRANSDUCER DEVICE WITH IMPROVED DETECTION FEATURES AND CORRESPONDING ELECTRONIC APPARATUS

Described herein is a MEMS acoustic transducer device provided with a micromechanical detection structure that detects acoustic-pressure waves and supplies a transduced electrical quantity, and with an integrated circuit operatively coupled to the micromechanical detection structure and having a reading module that generates at output an audio signal as a function of the transduced electrical quantity. The integrated circuit is further provided with a recognition module, which recognizes a of sound activity event associated to the transduced electrical quantity. The MEMS acoustic transducer has an output that supplies at output a data signal that carries information regarding recognition of the sound activity event.

MEMS microphone

An MEMS microphone is provided, comprising: a first substrate; a vibration diaphragm supported above the first substrate by a spacing portion, the first substrate, the spacing portion, and the vibration diaphragm enclosing a vacuum chamber, and a static deflection distance of the vibration diaphragm under an atmospheric pressure being less than a distance between the vibration diaphragm and the first substrate; and a floating gate field effect transistor outputting a varying electrical signal, the floating gate field effect transistor including a source electrode and a drain electrode both provided on the first substrate and a floating gate provided on the vibration diaphragm.

ACOUSTIC INTENSITY SENSOR USING A MEMS TRIAXIAL ACCELEROMETER AND MEMS MICROPHONES
20220099699 · 2022-03-31 ·

An airborne acoustic vector sensor for simultaneously measuring triaxial particle acceleration in three dimensions and pressure includes a triaxial MEMS accelerometer sensitive to an Earth gravitational field. The airborne acoustic vector sensor includes one or multiple MEMS microphones sensitive to sound pressure and overlapping the accelerometer in frequency. The airborne acoustic vector sensor includes a solid body having a density approximating a density of air. The accelerometer is mounted in or upon the solid body. The airborne acoustic vector sensor includes a suspension system supporting the accelerometer and solid body within a framework.

Transistor acoustic sensor element and method for manufacturing the same, acoustic sensor and portable device

The present disclosure provides a transistor acoustic sensor element and a method for manufacturing the same, an acoustic sensor and a portable device. The transistor acoustic sensor element comprises a gate, a gate insulating layer, a first electrode, an active layer and a second electrode arranged on a base substrate, wherein the active layer has a nanowire three-dimensional mesh structure and thus can vibrate under the action of sound signals, so that the output current of the transistor acoustic sensor element changes correspondingly. Since the active layer having the nanowire three-dimensional mesh structure can sensitively sense weak vibration of acoustic waves, the sensitivity to sound signals of the transistor acoustic sensor element is improved.

Solid-state transducer, system, and method

The present disclosure includes solid-state transducers, a system, and a method. In one embodiment, a solid-state transducer includes a housing, a first end portion, a second end portion, a plurality of electrical conductors, and a thin-film resistive material. The thin-film resistive material is disposed between and in electrical communication with a plurality of electrical conductors. The thin-film resistive material is configured to receive one or more electrical signals from the plurality of electrical conductors, and generate thermal oscillations to create pressure waves in a medium in response to receiving the one or more electrical signals.

SOLID-STATE TRANSDUCER, SYSTEM, AND METHOD
20200410973 · 2020-12-31 ·

The present disclosure includes solid-state transducers, a system, and a method. In one embodiment, a solid-state transducer includes a housing, a first end portion, a second end portion, a plurality of electrical conductors, and a thin-film resistive material. The thin-film resistive material is disposed between and in electrical communication with a plurality of electrical conductors. The thin-film resistive material is configured to receive one or more electrical signals from the plurality of electrical conductors, and generate thermal oscillations to create pressure waves in a medium in response to receiving the one or more electrical signals.