An anti-glare film is prepared which have a ratio R/V of a scattered specular reflection intensity R to a total V of scattered reflection intensity being from 0.01 to 0.12 and an absolute value of a chromaticity b* of transmitted light being 3 or less. The anti-glare film includes a transparent substrate layer, and an anti-glare layer formed on at least one surface of the transparent substrate layer. The anti-glare layer may be a cured product of a curable composition including one or more types of a polymer component and one or more types of a curable resin precursor component, and in particular, at least two components selected from a polymer component and a curable resin precursor component can be phase separated through liquid phase spinodal decomposition. This anti-glare film can achieve non-coloring properties and anti-glare properties in a compatible manner.

A vapor deposition method for depositing evaporated materials on a substrate using a mask includes arranging a mask frame and correcting a deflection of the mask frame in the direction of gravity after the mask frame is placed. The mask frame faces the substrate so that a first side is higher than a second side in a direction of gravity. The mask frame is provided with a mask and has the first side and the second side facing each other.

To provide an organic electroluminescence device having high luminous efficiency (for example, external quantum efficiency) and high durability and causing little chromaticity shift after device deterioration.

An organic electroluminescence device material comprising a substrate having thereon a pair of electrode and at least one organic layer between the electrodes, the organic layer containing a light emitting layer, wherein any one layer of the organic layer contains, for example, as shown below, a metal complex having a group represented by formula (I).

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To provide an organic electroluminescence device having high luminous efficiency (for example, external quantum efficiency) and high durability and causing little chromaticity shift after device deterioration.

An organic electroluminescence device material comprising a substrate having thereon a pair of electrode and at least one organic layer between the electrodes, the organic layer containing a light emitting layer, wherein any one layer of the organic layer contains, for example, as shown below, a metal complex having a group represented by formula (I).

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A display device includes a substrate including a first surface, a side surface, and a second surface opposite to the first surface, a pixel unit located on the first surface and including a light emitter, a first connection pad adjacent to an edge on the first surface and electrically connected to the pixel unit, a second connection pad adjacent to the edge on the second surface, and a side wire extending from the first surface through the side surface to the second surface and connecting the first connection pad and the second connection pad. The first connection pad and the second connection pad have different sizes.

A method for fabricating a display device that easily achieves higher resolution is provided. A display device having both high display quality and high resolution is provided. A first EL film is formed over a first pixel electrode and a second pixel electrode; a first sacrificial film is formed to cover the first EL film; the first sacrificial film and the first EL film are etched to expose the second pixel electrode and to form a first EL layer over the first pixel electrode and a first sacrificial layer over the first EL layer; and the first sacrificial layer is removed. The first EL film and the second EL film are etched by dry etching, and the first sacrificial layer is removed by wet etching.

A high-resolution or high-definition display device is provided. The display device is manufactured by forming a first pixel electrode and a second pixel electrode; forming a first layer over the first pixel electrode and the second pixel electrode; forming a first sacrificial layer over the first layer; processing the first layer and the first sacrificial layer to expose at least part of the second pixel electrode; forming a second layer over the first pixel electrode and the second pixel electrode; forming a second sacrificial layer over the second layer; processing the second layer and the second sacrificial layer to expose at least part of the first sacrificial layer; removing the first sacrificial layer and the second sacrificial layer; forming a third layer over the first pixel electrode and the second pixel electrode; forming a counter electrode over the third layer; and processing the third layer and the counter electrode to remove at least part of each of the third layer and the counter electrode included in a region between the first pixel electrode and the second pixel electrode in a top view.

Manufacturing equipment of a display device that is capable of successively performing steps from formation of a pixel circuit up to formation of a light-emitting element is provided. The manufacturing equipment includes a manufacturing apparatus of a light-emitting device that is capable of successively performing a film formation step, a lithography step, an etching step, and a sealing step for formation of an organic EL element and a manufacturing apparatus for formation of a pixel circuit that drives the organic EL element. Formation from the pixel circuit up to the organic EL element can be performed successively, so that a display device with a high yield and high reliability can be formed.

Manufacturing equipment of a light-emitting device with which steps from formation to sealing of a light-emitting element can be successively performed can be provided. In the manufacturing equipment of a light-emitting device, a deposition step, a lithography step, an etching step, and a sealing step by forming a protective layer for forming an organic EL element can be successively performed, whereby a downscaled organic EL element achieving high luminance and high reliability can be formed. Moreover, the manufacturing equipment can have an in-line system where apparatuses are arranged in the order of process steps for the light-emitting device, resulting in high throughput manufacturing.

Discussed is a display device having a plurality of semiconductor light emitting elements mounted on a substrate, wherein at least one of the semiconductor light emitting elements includes a first electrode and a second electrode spaced apart each other, a first conductivity type semiconductor layer disposed with the first electrode, a second conductivity type semiconductor layer configured to overlap with the first conductivity type semiconductor layer, and disposed with the second electrode, a first passivation layer covering outer surfaces of the first conductivity type semiconductor layer and the second conductivity type semiconductor layer, and a second passivation layer covering the first passivation layer, wherein at least one portion of the second electrode is overlapped with at least one portion of the first electrode along the thickness direction of the semiconductor light emitting element.