Discussed is a display device having a plurality of semiconductor light emitting elements mounted on a substrate, wherein at least one of the semiconductor light emitting elements includes a first electrode and a second electrode spaced apart each other, a first conductivity type semiconductor layer disposed with the first electrode, a second conductivity type semiconductor layer configured to overlap with the first conductivity type semiconductor layer, and disposed with the second electrode, a first passivation layer covering outer surfaces of the first conductivity type semiconductor layer and the second conductivity type semiconductor layer, and a second passivation layer covering the first passivation layer, wherein at least one portion of the second electrode is overlapped with at least one portion of the first electrode along the thickness direction of the semiconductor light emitting element.

A light-emitting element includes: pixel electrodes provided for individual subpixels of at least three colors; a common electrode provided facing each of the pixel electrodes; and light-emitting layers of each color provided between the common electrode and, respectively, each of the pixel electrodes, wherein one of each of the pixel electrodes and the common electrode is a cathode electrode and the other is an anode electrode and among the light-emitting layers of the at least three colors, a light-emitting layer of a color having a largest electron affinity extends in a state of being layered between the cathode electrode and each light-emitting layer of the other colors as well.

A method of manufacturing a display panel includes preparing a work substrate that includes a mother substrate that has a plurality of cell areas, a light emitting element layer formed in each of the cell areas, and an encapsulation layer formed on each cell area, disposing a plurality of protective films in the cell areas, respectively, that cover the light emitting element layer and the encapsulation layer, cutting the work substrate along cutting lines at an outer side of the protective films of each cell area to form a preliminary display panel, grinding side surfaces of the preliminary display panel, and removing the protective films from each ground preliminary display panel to form the display panel.

A display device includes the following: a base substrate; a light-emitting element on the base substrate with a TFT layer interposed therebetween, the light-emitting element forming a display region; a sealing film covering the light-emitting element and having a stack of, in sequence, first and second inorganic insulating films; a frame region surrounding the display region; a cut disposed in the frame region so as to partly cut the display region; a cut-peripheral wall disposed in the frame region between the display region and the cut, and extending along the boundary of the display region; an evaporated film between the cut-peripheral wall and the first inorganic insulating film; and an organic buffer layer disposed on a surface of the cut-peripheral wall and interposed between the first and second inorganic insulating films.

A light-emitting device with low power consumption is provided. The light-emitting apparatus including a first light-emitting device and a first color conversion layer. The first light-emitting device includes an anode, a cathode, and an EL layer between the anode and the cathode. The EL layer includes a layer including a material with an ordinary refractive index higher than or equal to 1.50 and lower than 1.75 with respect to light with a wavelength longer than or equal to 455 nm and shorter than or equal to 465 nm. The first color conversion layer includes a first substance that absorbs light and emits light. An ordinary refractive index of the first color conversion layer with respect to light with a wavelength longer than or equal to 455 nm and shorter than or equal to 465 nm is higher than or equal to 1.40 and lower than or equal to 2.10. The first color conversion layer is on an optical path of the light emitted from the first light-emitting device to an outside of the light-emitting apparatus.

A method of manufacturing a display device includes: a) a step of preparing a substrate including an electrode and another electrode; b) a step of forming a photosensitive resin material layer on the substrate; c) a step of forming a charge transport material layer and a light-emitting material layer on the substrate; and d) a step of patterning the photosensitive resin material layer, the charge transport material layer, and the light-emitting material layer into a photosensitive resin layer, a charge transport layer, and a light-emitting layer respectively by retaining, without lifting off, non-lift-off portions of the photosensitive resin material layer, the charge transport material layer, and the light-emitting material layer, the non-lift-off portions being provided at least on a part of the electrode, and lifting off lift-off portions of the photosensitive resin material layer, the charge transport material layer, and the light-emitting material layer.

The present disclosure provides a light emitting device having an anode and a cathode, and a first layer and a second layer disposed between the anode and the cathode.

The present disclosure provides a light emitting device having an anode and a cathode, and a first layer and a second layer disposed between the anode and the cathode.

A display device with high resolution is provided. The display device includes a first conductor, a first insulator over the first conductor, a second conductor provided inside an opening of the first insulator, a first light-emitting layer in contact with a top surface of the second conductor and a top surface of the first insulator, and a third conductor in contact with a top surface of the first light-emitting layer.

A method for manufacturing a display apparatus having high display quality is provided. A method for manufacturing a display apparatus including first to third insulators, first and second conductors, and first and second EL layers is provided. The first conductor is formed over the first insulator, and the second insulator is formed over the first insulator and over the first conductor. A first opening portion reaching the first conductor is formed in the second insulator. A sacrificial layer is formed over the second insulator and over a bottom surface of the first opening portion, and a resist is applied over the sacrificial layer. Light exposure and development are performed on the resist, so that a second opening portion reaching the sacrificial layer is formed in a region overlapping with the first conductor. A third opening portion is formed in a region of a bottom surface of the second opening portion, and the first EL layer is formed over the resist, over the sacrificial layer, and over the first conductor. Then, the resist and the sacrificial layer are removed, whereby the first EL layer over the resist and over the sacrificial layer is removed. The second EL layer is formed over the first EL layer and over the second insulator, and the second conductor and the third insulator are formed in order over the second EL layer.