Disclosed are a charge transporting varnish comprising a specific oligoaniline compound, an electron accepting dopant, a metal oxide nanoparticle, and an organic solvent; a charge transporting film prepared from the charge transporting varnish; an electronic device and an organic electroluminescent device having the charge transporting film; and a method for producing the charge transporting film using the charge transporting varnish.

An organic EL element including light emitting layers is formed above a first region of a main surface of a back film. A plurality of terminal portions are formed above a second region of the main surface of the back film. A cover film including an opening is provided as an uppermost layer above the main surface of the back film.

A flexible display production apparatus of the present disclosure includes: a stage (520) for supporting a flexible display supporting substrate (10), the flexible display supporting substrate including a glass base (11) and a synthetic resin film (12) provided on the glass base; a polisher head (535) configured to approach a selected region of a surface (12s) of the synthetic resin film (12) and polish the region so that a polish recess (12c) is formed in the surface (12s); and a repair head (536) for supplying a liquid material (20a) to the polish recess (12c) formed in the surface (12s) of the synthetic resin film (12) and heating the liquid material (20a), thereby forming a sintered layer (20) from the liquid material (20a).

According to a flexible OLED device production method of the present disclosure, after an intermediate region (30i) and flexible substrate regions (30d) of a plastic film (30) of a multilayer stack (100) are divided from one another, the interface between the flexible substrate regions (30d) and a glass base (10) is irradiated with laser light. The multilayer stack (100) is separated into a first portion (110) and a second portion (120) while the multilayer stack (100) is in contact with a stage (210). The first portion (110) includes a plurality of OLED devices (1000) which are in contact with the stage (210). The OLED devices (1000) include a plurality of functional layer regions (20) and the flexible substrate regions (30d). The second portion (120) includes the glass base (10) and the intermediate region (30i). The step of irradiating with the laser light includes the first laser light scanning for scanning the interface in a first direction with the laser light in the form of a line beam, and the second laser light scanning for scanning the interface in a second direction with the laser light. In each of the first and second laser light scanning, the irradiation intensity is modulated such that the irradiation intensity for at least part of the interface between the intermediate region (30i) and the glass base (10) is lower than the irradiation intensity for the interface between the flexible substrate regions (30d) and the glass base (10).

According to a flexible OILED device production method of the present disclosure, after an intermediate region. (30i) and a flexible substrate region (30d) of a plastic film (30) of a multilayer stack (100) are divided, the interface between the flexible substrate region (30d) and a glass base (10) is irradiated with laser light. The multilayer stack (100) separated into the first portion (110) and the second portion (120) while the multilayer stack (100) is kept in contact with the stage (210). The first portion (110) includes a plurality of OLED devices (1000) which are in. contact with stage (210). The OLED devices (1000) include a plurality of functional layer regions (20) and. the flexible substrate region (30d). The second portion (120) includes the glass base (10) and the intermediate region (30i). The step of irradiating with the laser light includes forming the laser light from a plurality of arranged laser light sources such that the irradiation intensity of the laser light for at least part of the interface between the intermediate region (30i) and the glass base (10) is lower than the irradiation intensity of the laser light for the interface between the flexible substrate region (30d) and the class base (10).

According to a flexible OLED device production method of the present disclosure, after an intermediate region (30i) and a flexible substrate region (30d) of a plastic film (30) of a multilayer stack (100) are divided, the interface between the plastic film (30) and a glass base (10) is irradiated with laser light. The multilayer stack (100) is separated into the first portion (110) and the second portion (120) while the multilayer stack (100) is kept in contact with the stage (212). The first portion (110) includes the intermediate region (30i) and an OLED device (1000) which are adhered to the stage (212). The OLED device (1000) includes a functional layer region (20) and the flexible substrate region (30d). The second portion (120) includes the glass base (10). The intermediate region (30i) adhered to the stage (212) is removed from the stage while the OLED device (1000) is kept adhered to the stage.

A display device includes a TFT layer provided in a display area, a bending section and a terminal in a non-active area, and a terminal wiring line that connects to the terminal through the bending section, and the terminal wiring line includes a first wiring line and a second wiring line each positioned on both sides of the bending section and a third wiring line that passes through the bending section and is electrically connected with each of the first wiring line and the second wiring line and curved so as to have recesses and protrusions.

Disclosed is a display device having a pixel including a pixel electrode, an electroluminescence layer over the pixel electrode, and an opposing electrode over the electroluminescence layer. The pixel electrode possesses: a first conductive layer including a conductive oxide containing indium and zinc; a second conductive layer over the first conductive layer, the second conductive layer containing silver; and a third conductive layer over the second conductive layer, the third conductive layer including a conductive oxide containing indium and tin. A thickness of the first conductive layer is equal to or more than twice a thickness of the third conductive layer and equal to or less than five times the thickness of the third conductive layer.

A light emitting apparatus and a window. The light emitting apparatus includes a liquid crystal device that includes a support substrate, a first electrode, a liquid crystal layer, and a sacrificial structure, separating the sacrificial structure from the liquid crystal layer to expose one surface of the liquid crystal layer, and a second electrode on the one surface of the liquid crystal layer.

A light emitting apparatus and a window. The light emitting apparatus includes a liquid crystal device that includes a support substrate, a first electrode, a liquid crystal layer, and a sacrificial structure, separating the sacrificial structure from the liquid crystal layer to expose one surface of the liquid crystal layer, and a second electrode on the one surface of the liquid crystal layer.