A vapor deposition device (1) performs a vapor deposition treatment to form a luminescent layer (47) having a predetermined pattern on a film formation substrate (40). The vapor deposition device includes: a nozzle (13) having a plurality of injection holes (16) from which vapor deposition particles (17), which constitute the luminescent layer, are injected toward the film formation substrate when the vapor deposition treatment is carried out; and a plurality of control plates (20) provided between the nozzle and the film formation substrate and restricting an incident angle, with respect to the film formation substrate, of the vapor deposition particles injected from the plurality of injection holes. The nozzle includes: a nozzle main body (14b) in a container shape having an opening (14c) on a surface thereof on a film formation substrate side and (ii) a plurality of blocks (15) covering the opening and separated from each other, each of the plurality of blocks having the plurality of injection holes. The above arrangement allows a vapor-deposited film pattern to be formed with high definition.

Novel phosphorescent tetradentate platinum compounds of Formula I are provided. The complexes contain a dibenzo moiety, which allows for the creation of OLED devices with improved properties when compounds of Formula I are incorporated into such devices. Compounds of Formula I′ that comprise two ligands that contain a 5-membered carbocyclic or heterocyclic ring, one of which contains an imidazole ring with a twisted aryl group attached to N−1 and a second aromatic ring that is attached to the platinum via a carbon atom. These compounds may be advantageously used in OLEDs.

A magnetic material section is provided on a mask substrate so as to be interposed between Y aperture lines of the mask substrate and between X aperture line of the mask substrate. A portion of the magnetic material section which portion is interposed between the X aperture lines has a first thickness and a second thickness which is less than the first thickness, the first thickness being that of each sub-portion thereof which is positioned between mutually adjacent ones of the Y aperture lines, the second thickness being that of each sub-portion thereof which is positioned between apertures which are mutually adjacent in a Y direction.

A vapor deposition device (50) disclosed, a partition wall (26) standing between film formation regions on a film formation substrate (200), includes: a mask unit (80) including a shadow mask (81) and a vapor deposition source (85) fixed in position relative to each other; contacting means for bringing the film formation substrate (200) and the shadow mask (81) into contact with each other at the partition wall (26); and moving means for moving at least a first one of the mask unit (80) and the film formation substrate (200) relative to a second one thereof in a state in which the contact caused by the contacting means is kept.

A vapor deposition device (50) disclosed, a partition wall (26) standing between film formation regions on a film formation substrate (200), includes: a mask unit (80) including a shadow mask (81) and a vapor deposition source (85) fixed in position relative to each other; contacting means for bringing the film formation substrate (200) and the shadow mask (81) into contact with each other at the partition wall (26); and moving means for moving at least a first one of the mask unit (80) and the film formation substrate (200) relative to a second one thereof in a state in which the contact caused by the contacting means is kept.

The method for manufacturing a display device includes forming a light emitting element and a terminal on a substrate, forming a sealing film including a first inorganic insulating film and a second inorganic insulating film to cover the light emitting element and the terminal, forming a resist having a taper shape in which a thickness of an end portion on the sealing film becomes thinner as it goes to the terminal side by using a gray-tone mask, forming a taper shape in which thicknesses in end portions of the first inorganic insulating film and the second inorganic insulating film becomes thinner as it goes to the terminal side by etching, forming a touch electrode above the sealing film and forming wiring connected to the terminal via the end portions together with connecting to the touch electrode for detecting a touched position.

A light-emitting layer of a light-emitting element contains halogen ligands and organic ligands coordinated to each of quantum dots. The light-emitting layer includes: a first region toward a hole-transport layer; and a second region toward an electron-transport layer. In the first region, a concentration of the halogen ligands is higher than a concentration of the organic ligands, and, in the second region, the concentration of the halogen ligands is lower than the concentration of the organic ligands.

A light-emitting element includes an anode, a hole transport layer, a quantum dot light-emitting layer, an electron transport layer, and a cathode, in this order. The electron transport layer includes a particulate metal oxide and a conductive resin that disperses the metal oxide.

A method for manufacturing a display device including a light-emitting element, the method includes: storing, in a manufacturing process of the display device, a plurality of abutting positions where a back face of a support substrate locally abuts a manufacturing apparatus; forming, on a surface of the support substrate on a side on which the light-emitting element is to be formed, a peeling layer at a position opposing at least one position of the plurality of abutting positions stored; forming, on the support substrate, a resin layer to cover the peeling layer; forming a TFT layer on the resin layer; forming the light-emitting element on the TFT layer; and peeling the support substrate and the resin layer.

A metal complex exhibits blue light emission of high color purity and has a color purity of small temperature dependence, particularly in the blue region. Specifically, the metal complex is represented by Formula (1a): ##STR00001##
wherein M is a metal atom; R.sup.0 is a divalent linking group; each j independently represents 0 or 1; R.sup.P1, R.sup.P2, R.sup.P3, R.sup.P4 and R.sup.P6 each independently represents a hydrogen atom or the like; R.sup.P5 represents a halogen atom or the like; m is an integer of from 1 to 3, n is an integer of from 0 to 2, and m+n is 2 or 3; and the portion represented by Formula (2): ##STR00002##
represents a bidentate ligand; wherein R.sup.x and R.sup.y are an atom bonding to the metal atom M, and each independently represents a carbon atom, an oxygen atom or a nitrogen atom.