Patent classifications
H05B33/10
ANTI-GLARE FILM, METHOD FOR PRODUCING SAME, AND USE OF SAME
An anti-glare film including a light reflectance of 3.8% or less and a haze of 40% or greater. A 60° gloss of the anti-glare film may be 15% or less. The anti-glare film includes a transparent substrate layer, and an anti-glare layer formed on at least one surface of the transparent substrate layer. The anti-glare layer may be a cured product of a curable composition including one or more types of a polymer component and one or more types of a curable resin precursor component, and in particular, at least two components selected from a polymer component and a curable resin precursor component can be phase separated through liquid phase spinodal decomposition. The anti-glare film has improved anti-reflection properties.
Organic electroluminescence device
The present invention relates to an electroluminescence device having high luminous efficiency (for example, external quantum efficiency) and high durability and causing little chromaticity shift after device deterioration. The present invention also relates to an organic electroluminescence device material comprising a substrate having thereon a pair of electrode and at least one organic layer between the electrodes, the organic layer containing a light emitting layer, wherein the light emitting layer contains a metal complex having a group represented by formula (I). ##STR00001##
Organic electroluminescence device
The present invention relates to an electroluminescence device having high luminous efficiency (for example, external quantum efficiency) and high durability and causing little chromaticity shift after device deterioration. The present invention also relates to an organic electroluminescence device material comprising a substrate having thereon a pair of electrode and at least one organic layer between the electrodes, the organic layer containing a light emitting layer, wherein the light emitting layer contains a metal complex having a group represented by formula (I). ##STR00001##
Digital jukebox device with improved user interfaces, and associated methods
Certain exemplary embodiments relate to entertainment systems that interact with users to provide access to media appropriate to and/or customized for a particular user using the entertainment system, the location at which the entertainment system is being accessed, and/or a predefined event. For example, in certain exemplary embodiments, an entertainment system in a location is configured to provide jukebox-related and entertainment system mediated services that are accessible from within and from the outside of the location, and provide (1) attract or flight media operations, (2) browsing services, and/or (3) search screens appropriate to and/or customized for a particular user using the entertainment system, the location at which the entertainment system is being accessed, and/or a predefined event. Such screens may be provided with a three-dimensional look-and-feel in certain exemplary embodiments.
Digital jukebox device with improved user interfaces, and associated methods
Certain exemplary embodiments relate to entertainment systems that interact with users to provide access to media appropriate to and/or customized for a particular user using the entertainment system, the location at which the entertainment system is being accessed, and/or a predefined event. For example, in certain exemplary embodiments, an entertainment system in a location is configured to provide jukebox-related and entertainment system mediated services that are accessible from within and from the outside of the location, and provide (1) attract or flight media operations, (2) browsing services, and/or (3) search screens appropriate to and/or customized for a particular user using the entertainment system, the location at which the entertainment system is being accessed, and/or a predefined event. Such screens may be provided with a three-dimensional look-and-feel in certain exemplary embodiments.
METHOD AND APPARATUS FOR LOAD-LOCKED PRINTING
The disclosure relates to a method and apparatus for preventing oxidation or contamination during a circuit printing operation. The circuit printing operation can be directed to OLED-type printing. In an exemplary embodiment, the printing process is conducted at a load-locked printer housing having one or more of chambers. Each chamber is partitioned from the other chambers by physical gates or fluidic curtains. A controller coordinates transportation of a substrate through the system and purges the system by timely opening appropriate gates. The controller may also control the printing operation by energizing the print-head at a time when the substrate is positioned substantially thereunder.
METHOD AND APPARATUS FOR LOAD-LOCKED PRINTING
The disclosure relates to a method and apparatus for preventing oxidation or contamination during a circuit printing operation. The circuit printing operation can be directed to OLED-type printing. In an exemplary embodiment, the printing process is conducted at a load-locked printer housing having one or more of chambers. Each chamber is partitioned from the other chambers by physical gates or fluidic curtains. A controller coordinates transportation of a substrate through the system and purges the system by timely opening appropriate gates. The controller may also control the printing operation by energizing the print-head at a time when the substrate is positioned substantially thereunder.
DISPLAY DEVICE USING SEMICONDUCTOR LIGHT EMITTING ELEMENT
Discussed is a display device having a plurality of semiconductor light emitting elements mounted on a substrate, wherein at least one of the semiconductor light emitting elements includes a first electrode and a second electrode spaced apart each other, a first conductivity type semiconductor layer disposed with the first electrode, a second conductivity type semiconductor layer configured to overlap with the first conductivity type semiconductor layer, and disposed with the second electrode, a first passivation layer covering outer surfaces of the first conductivity type semiconductor layer and the second conductivity type semiconductor layer, and a second passivation layer covering the first passivation layer, wherein at least one portion of the second electrode is overlapped with at least one portion of the first electrode along the thickness direction of the semiconductor light emitting element.
DISPLAY DEVICE USING SEMICONDUCTOR LIGHT EMITTING ELEMENT
Discussed is a display device having a plurality of semiconductor light emitting elements mounted on a substrate, wherein at least one of the semiconductor light emitting elements includes a first electrode and a second electrode spaced apart each other, a first conductivity type semiconductor layer disposed with the first electrode, a second conductivity type semiconductor layer configured to overlap with the first conductivity type semiconductor layer, and disposed with the second electrode, a first passivation layer covering outer surfaces of the first conductivity type semiconductor layer and the second conductivity type semiconductor layer, and a second passivation layer covering the first passivation layer, wherein at least one portion of the second electrode is overlapped with at least one portion of the first electrode along the thickness direction of the semiconductor light emitting element.
Semiconductor device and method for manufacturing semiconductor device
A semiconductor device which has favorable electrical characteristics is provided. A method for manufacturing a semiconductor device with high productivity is provided. A method for manufacturing a semiconductor device with a high yield is provided. A method for manufacturing a semiconductor device includes a first step of forming a first insulating layer containing silicon and nitrogen, a second step of adding oxygen in a vicinity of a surface of the first insulating layer, a third step of forming a semiconductor layer containing a metal oxide over and in contact with the first insulating layer, a fourth step of forming a second insulating layer containing oxygen over and in contact with the semiconductor layer, a fifth step of performing plasma treatment in an atmosphere containing oxygen at a first temperature, a sixth step of performing plasma treatment in an atmosphere containing oxygen at a second temperature lower than the first temperature, and a seventh step of forming a third insulating layer containing silicon and nitrogen over the second insulating layer.