A semiconductor device which has favorable electrical characteristics is provided. A method for manufacturing a semiconductor device with high productivity is provided. A method for manufacturing a semiconductor device with a high yield is provided.

A method for manufacturing a semiconductor device includes a first step of forming a first insulating layer containing silicon and nitrogen, a second step of adding oxygen in a vicinity of a surface of the first insulating layer, a third step of forming a semiconductor layer containing a metal oxide over and in contact with the first insulating layer, a fourth step of forming a second insulating layer containing oxygen over and in contact with the semiconductor layer, a fifth step of performing plasma treatment in an atmosphere containing oxygen at a first temperature, a sixth step of performing plasma treatment in an atmosphere containing oxygen at a second temperature lower than the first temperature, and a seventh step of forming a third insulating layer containing silicon and nitrogen over the second insulating layer.

A semiconductor device which has favorable electrical characteristics is provided. A method for manufacturing a semiconductor device with high productivity is provided. A method for manufacturing a semiconductor device with a high yield is provided.

A method for manufacturing a semiconductor device includes a first step of forming a first insulating layer containing silicon and nitrogen, a second step of adding oxygen in a vicinity of a surface of the first insulating layer, a third step of forming a semiconductor layer containing a metal oxide over and in contact with the first insulating layer, a fourth step of forming a second insulating layer containing oxygen over and in contact with the semiconductor layer, a fifth step of performing plasma treatment in an atmosphere containing oxygen at a first temperature, a sixth step of performing plasma treatment in an atmosphere containing oxygen at a second temperature lower than the first temperature, and a seventh step of forming a third insulating layer containing silicon and nitrogen over the second insulating layer.

A light emitting apparatus and a window. The light emitting apparatus includes a liquid crystal device that includes a support substrate, a first electrode, a liquid crystal layer, and a sacrificial structure, separating the sacrificial structure from the liquid crystal layer to expose one surface of the liquid crystal layer, and a second electrode on the one surface of the liquid crystal layer.

A light emitting apparatus and a window. The light emitting apparatus includes a liquid crystal device that includes a support substrate, a first electrode, a liquid crystal layer, and a sacrificial structure, separating the sacrificial structure from the liquid crystal layer to expose one surface of the liquid crystal layer, and a second electrode on the one surface of the liquid crystal layer.

A rigid material whose linear expansion coefficient is small and whose relative density is small is used to provide a vapor-deposition mask using a lightweight and highly dimension-accurate frame. A frame (15) of the vapor-deposition mask disclosed in accordance with the present embodiment is formed with a carbon-fiber reinforced plastic (CFRP).

An organic-inorganic perovskite satisfying E.sub.T<E.sub.T1 and E.sub.S−E.sub.T≤0.1 eV has a high emission efficiency. E.sub.S represents the excited singlet energy level in emission of an inorganic component, E.sub.T represents the excited triplet energy level in emission of an inorganic component, E.sub.T1 represents the excited triplet energy level in emission of an organic component.

An object of the invention is to provide a cured film which is high in sensitivity, capable of forming a pattern in a low-taper shape after development, capable of the change in pattern opening width between before and after thermal curing, an excellent in light-blocking property, and a negative photosensitive resin composition that forms the film. The negative photosensitive resin composition contains an (A) alkali-soluble resin, a (C1) photo initiator, and a (Da) black colorant, where the (A) alkali-soluble resin contains a (A1) first resin including one or more selected from the group consisting of a (A1-1) polyimide, a (A1-2) polyimide precursor, a (A1-3) polybenzoxazole, and a (A1-4) polybenzoxazole precursor, and has a structural unit having a fluorine atom at a specific ratio, and the (C1) photo initiator contains an (C1-1) oxime ester-based photo initiator that has a specific structure.

There is provided a display device capable of decreasing a drive voltage. A display device includes: a first electrode provided for each of a plurality of light emitting elements arranged on a flat surface; at least two or more kinds of inorganic insulating layers which separate each of the light emitting elements and have different concentrations of hydroxy groups on surfaces of the layers; an organic light emitting layer provided on the first electrode and the two or more kinds of inorganic insulating layers; and a second electrode provided on the organic light emitting layer.

To obtain a vapor-deposition mask that suppresses heat conduction at a frame of the vapor-deposition mask and make the weight thereof lighter to achieve upsizing of the vapor-deposition mask and carry out high-definition vapor-deposition cheaply, the frame (15) to which a mask main body (10) is bonded is formed as a sandwich structure (150) in which end plate (152) is bonded onto an opposing surface of at least a part of a core portion (151) in the vapor-deposition mask disclosed in the present embodiment.

The production method of a substrate with a patterned film according to the present disclosure includes: a cleaning step of performing UV/ozone cleaning or oxygen plasma cleaning on a substrate with a patterned film including a substrate and a patterned film on the substrate, to obtain a first substrate with a patterned film; and a heating step of heating the first substrate with a patterned film to obtain a second substrate with a patterned film, wherein the patterned film of the first substrate with a patterned film has a contact angle decreased in the cleaning step, and the patterned film of the second substrate with a patterned film has a contact angle recovered in the heating step.