A display device manufacturing method according to the disclosure includes the steps of forming a first resin layer serving as a first flexible substrate on a first mother substrate, forming a first light-emitting layer on the first resin layer, and forming, on the first light-emitting layer, a first encapsulating layer encapsulating the first light-emitting layer, forming a second resin layer serving as a second flexible substrate on a second mother substrate, forming a second light-emitting layer on the second resin layer, and forming, on the second light-emitting layer, a second encapsulating layer encapsulating the second light-emitting layer, bonding the first mother substrate and the second mother substrate with a buffer sheet interposed between the first mother substrate and the second mother substrate so that the first encapsulating layer and the second encapsulating layer face each other, peeling the first resin layer from the first mother substrate in a state where the first resin layer and the second resin layer are layered with the buffer sheet interposed between the first resin layer and the second resin layer, and bonding a first support film to the first resin layer.

A fluorinated polymer suitable for deposition is provided. A film containing such a fluorinated polymer as a material is provided. A method for producing a film, by which such a film can readily be produced, is provided. Further, an organic photoelectronic element having such a film in its structure is provided.

A fluorinated polymer which satisfies the following requirements (1) to (3): (1) the melting point is 200° C. or higher, (2) the thermogravimetric loss rate when the temperature is increased at a temperature-increasing rate of 2° C./min under a pressure of 1×10.sup.−3 Pa, substantially reaches 100% at 400° C. or lower, (3) when the temperature is increased at a temperature-increasing rate of 2° C./min under a pressure of 1×10.sup.−3 Pa, the temperature width from a temperature at which the thermogravimetric loss rate is 10% to a temperature at which it is 90%, is within 100° C.

A fluorinated polymer suitable for deposition and capable of favorable metal patterning, is provided. A resin film containing such a fluorinated polymer as a material is provided. Further, a photoelectronic element having such a resin film in its structure is provided.

A fluorinated polymer which satisfies the following requirements (1) to (3): (1) the melting point is less than 200° C., or no melting point is observed, (2) the thermogravimetric loss rate when the temperature is increased at a temperature-increasing rate of 2° C./min under a pressure of 1×10.sup.−3 Pa, substantially reaches 100% at 400° C. or lower, (3) when the temperature is increased at a temperature-increasing rate of 2° C./min under a pressure of 1×10.sup.−3 Pa, the temperature width from a temperature at which the thermogravimetric loss rate is 10% to a temperature at which it is 90%, is within 200° C.

A method for manufacturing a quantum dot layer includes: performing first application of applying, to a position overlapping with a substrate, a first solution including a plurality of particles including a core and a first ligand, a first inorganic precursor, and a first solvent; performing first heating of heating first solution to a first temperature or higher after the performing first application, the first temperature being a higher temperature of a melting point of the first ligand and a boiling point of the first solvent; and performing second heating of heating the first inorganic precursor to a second temperature after the performing first heating, the second temperature being higher than the first temperature and being a temperature, at which the first inorganic precursor epitaxially grows around the core and at which a first shell configured to coat the core is formed to form a plurality of first quantum dots.

The invention relates to compounds comprising functional substituents in a specific spatial arrangement, devices containing same, and the preparation and use thereof.

The invention relates to compounds comprising functional substituents in a specific spatial arrangement, devices containing same, and the preparation and use thereof.

Alight-emitting element includes an anode electrode, a cathode electrode, a light-emitting layer, a positive hole transport layer, and an electron transport layer. The light-emitting layer, the positive hole transport layer, and the electron transport layer are provided between the anode electrode and the cathode electrode. The light-emitting layer includes QD phosphor particles, a positive hole transport substance configured to transport positive holes transported thereto by the positive hole transport layer, an electron transport substance configured to transport electrons transported thereto by the electron transport layer, and a photosensitive host material.

A quantum dot including a core comprising a first semiconductor nanocrystal including a zinc chalcogenide and a semiconductor nanocrystal shell disposed on the surface of the core and comprising zinc, selenium, and sulfur. The quantum dot does not comprise cadmium, emits blue light, and may exhibit a digital diffraction pattern obtained by a Fast Fourier Transform of a transmission electron microscopic image including a (100) facet of a zinc blende structure. In an X-ray diffraction spectrum of the quantum dot, a ratio of a defect peak area with respect to a peak area of a zinc blende crystal structure is less than about 0.8:1. A method of producing the quantum dot, and an electroluminescent device including the quantum dot are also disclosed.

A light-emitting element includes, in sequence, an anode, a hole transport layer, a luminous layer containing a plurality of quantum dots, an electron transport layer, and a cathode. The electron transport layer includes a plurality of inorganic nanoparticles having electron transportability, and an organic layer having electron transportability. The organic layer partly contains the plurality of inorganic nanoparticles, and includes a plurality of first hollows in an interface adjacent to the luminous layer. The plurality of first hollows are filled with the plurality of quantum dots.

A light-emitting element includes, in order of listing, an anode, an hole transport layer, an emission layer, and a cathode. The light-emitting element includes an reducing material disposed in at least a part between the anode and the hole transport layer, being in contact with the anode and the hole transport layer, and containing a reducing material that reduces a layer having the hole transport layer. The reducing material contains, in a structure of the reducing material, hydrogen either at a concentration ratio of 1 to 1 with resect to a base metal, or at a larger concentration ratio than the base metal.