According to a flexible OLED device production method of the present disclosure, a multilayer stack (100) is provided which includes a glass base (10), a functional layer region (20) including a TFT layer (20A) and an OLED layer (20B), and a synthetic resin film (30) provided between the glass base (10) and the functional layer region (20) and bound to the glass base (10). In a dry gas atmosphere whose dew point is not more than 50 C., the multilayer stack (100) is separated into a first portion (110) and a second portion (120), and a surface (30s) of the synthetic resin film (30) is exposed to the dry gas atmosphere, the first portion (110) including the functional layer region (20) and the synthetic resin film (30), the second portion (120) including the glass base (10). The first portion (110) is transported from the dry gas atmosphere to a reduced-pressure atmosphere R, and a protection layer (60) is formed on the surface (30s) of the synthetic resin film (30) in the reduced-pressure atmosphere R.

A semiconductor device which has favorable electrical characteristics is provided. A method for manufacturing a semiconductor device with high productivity is provided. A method for manufacturing a semiconductor device with a high yield is provided. A method for manufacturing a semiconductor device includes a first step of forming a first insulating layer containing silicon and nitrogen, a second step of adding oxygen in a vicinity of a surface of the first insulating layer, a third step of forming a semiconductor layer containing a metal oxide over and in contact with the first insulating layer, a fourth step of forming a second insulating layer containing oxygen over and in contact with the semiconductor layer, a fifth step of performing plasma treatment in an atmosphere containing oxygen at a first temperature, a sixth step of performing plasma treatment in an atmosphere containing oxygen at a second temperature lower than the first temperature, and a seventh step of forming a third insulating layer containing silicon and nitrogen over the second insulating layer.

A semiconductor device which has favorable electrical characteristics is provided. A method for manufacturing a semiconductor device with high productivity is provided. A method for manufacturing a semiconductor device with a high yield is provided. A method for manufacturing a semiconductor device includes a first step of forming a first insulating layer containing silicon and nitrogen, a second step of adding oxygen in a vicinity of a surface of the first insulating layer, a third step of forming a semiconductor layer containing a metal oxide over and in contact with the first insulating layer, a fourth step of forming a second insulating layer containing oxygen over and in contact with the semiconductor layer, a fifth step of performing plasma treatment in an atmosphere containing oxygen at a first temperature, a sixth step of performing plasma treatment in an atmosphere containing oxygen at a second temperature lower than the first temperature, and a seventh step of forming a third insulating layer containing silicon and nitrogen over the second insulating layer.

An organic EL light-emitting element is provided in which, by means of an organic material that is oligomeric, an organic layer coated film 25 is formed in a high-definition pixel pattern in a 100-2500 m.sup.2 area; a manufacturing method of said organic EL light-emitting element is also provided. The coated film 25 is formed by dropwise injection of a liquid composition containing an organic material oligomer in openings of insulation banks that are formed at a height of 0.5-1 m.

A flexible emitting light device production apparatus of the present disclosure includes: a stage (520) for supporting a flexible emitting light supporting substrate (10), the flexible display supporting substrate including a glass base (11) and a synthetic resin film (12) provided on the glass base; a polisher head (535) configured to approach a selected region of a surface (12s) of the synthetic resin film (12) and polish the region so that a polish recess (12c) is formed in the surface (12s); and a repair head (536) for supplying a liquid material (20a) to the polish recess (12c) formed in the surface (12s) of the synthetic resin film (12) and heating the liquid material (20a), thereby forming a sintered layer (20) from the liquid material (20a).

An electroluminescence display and a method for driving the same are provided to enhance the aging performance of the electroluminescence display. The electroluminescence display comprises: a display panel on which a plurality of pixels each comprising an electroluminescence element; and a power supply part that outputs a drive voltage for driving the pixels, wherein an externally applied aging signal is applied to a cathode of the electroluminescence element to perform aging on the display panel.

An electroluminescence display and a method for driving the same are provided to enhance the aging performance of the electroluminescence display. The electroluminescence display comprises: a display panel on which a plurality of pixels each comprising an electroluminescence element; and a power supply part that outputs a drive voltage for driving the pixels, wherein an externally applied aging signal is applied to a cathode of the electroluminescence element to perform aging on the display panel.

According to a flexible light-emitting device production method of the present disclosure, after an intermediate region (30i) and flexible substrate regions (30d) of a plastic film (30) of a multilayer stack (100) are divided from one another, the interface between the flexible substrate regions (30d) and a glass base (10) is irradiated with lift-off light. The multilayer stack (100) is separated into a first portion (110) and a second portion (120) while the multilayer stack (100) is in contact with a stage (212). The first portion (110) includes a plurality of light-emitting devices (1000) which are in contact with the stage (212). The light-emitting devices (1000) include a plurality of functional layer regions (20) and the flexible substrate regions (30d). The second portion (120) includes the glass base (10) and the intermediate region (30i). The stage (212) has ejection holes in a region which is to face the intermediate region (30i), from which a fluid is ejected in the separation step.

According to a flexible light-emitting device production method of the present disclosure, after an intermediate region (30i) and a flexible substrate region (30d) of a plastic film (30) of a multilayer stack (100) are divided, the interface between the flexible substrate region (30d) and a glass base (10) is irradiated with lift-off light. The multilayer stack (100) is separated into the first portion (110) and the second portion (120) while the multilayer stack (100) is kept in contact with the stage (210). The first portion (110) includes a plurality of light-emitting devices (1000) which are in contact with the stage (210). The light-emitting devices (1000) include a plurality of functional layer regions (20) and the flexible substrate region (30d). The second portion (120) includes the glass base (10) and the intermediate region (30i). The step of irradiating with the lift-off light includes forming the lift-off light from a plurality of arranged light sources and temporally and spatially modulating a power of the plurality of lift-off light sources according to a shape of the flexible substrate region of the synthetic resin film such that the irradiation intensity of the lift-off light for at least part of the interface between the intermediate region (30i) and the glass base (10) is lower than the irradiation intensity of the lift-off light for the interface between the flexible substrate region (30d) and the glass base (10).

This organic EL display device (100) has multiple pixels, and comprises: an element substrate (1) which has a substrate and multiple organic EL elements supported on the substrate and arranged in each of the multiple pixels; and a thin-film sealing structure (10) covering the multiple pixels. The thin-film sealing structure has a first inorganic barrier layer (12) and an organic barrier layer (14) contacting the upper surface or the lower surface of the first inorganic barrier layer. The element substrate further has a bank layer (33) defining each of the multiple pixels and multiple spacers (31) arranged in the gaps between the pixels, and the multiple spacers (31) are covered by the bank layer (33).