A quantum dot including a core comprising a first semiconductor nanocrystal including a zinc chalcogenide and a semiconductor nanocrystal shell disposed on the surface of the core and comprising zinc, selenium, and sulfur. The quantum dot does not comprise cadmium, emits blue light, and may exhibit a digital diffraction pattern obtained by a Fast Fourier Transform of a transmission electron microscopic image including a (100) facet of a zinc blende structure. In an X-ray diffraction spectrum of the quantum dot, a ratio of a defect peak area with respect to a peak area of a zinc blende crystal structure is less than about 0.8:1. A method of producing the quantum dot, and an electroluminescent device including the quantum dot are also disclosed.

A method for manufacturing an organic EL device according to an embodiment of the present invention includes: a step for preparing an element substrate having a substrate and a plurality of organic electroluminescent elements (3) which are supported by the substrate; and a step for forming a thin film encapsulation structure (10) covering the organic electroluminescent elements. The step for forming a thin film encapsulation structure includes: a step A for forming a first inorganic barrier layer (12); after the step A, a step B for detecting particles (P) below or above the first inorganic barrier layer (12) and obtaining positional information on each particle; a step C in which microscopic liquid drops of a coating liquid containing a photocurable resin are applied for each particle by an inkjet, method on the basis of the positional information; after the step C, a step D for irradiating the photocurable resin with an ultraviolet ray and curing the photocurable resin to form an organic barrier layer (14); and after the step D, a step E for forming a second inorganic barrier layer (16) on the first inorganic barrier layer and the organic barrier layer.

An active side slit and an FPC side slit each extend through a second inorganic insulating film and reach a first inorganic insulating film. The active side slit is formed between an active region and an IC chip mounted region of an EL device in plan view and also, the IC chip mounted region is sandwiched between the active side slit and the FPC side slit.

A vapor deposition mask is provided with: a resin film, which has at least one of first to third opening patterns in which first to third openings, for forming first to third subpixels that configure one pixel of a display panel, are disposed with a fixed periodicity; and a metal support layer, which is bonded to the resin film and has an opening pattern for fourth openings that are formed so as to be able to encompass all of the first to third openings of the resin film. In regions of the resin film exposed by the fourth openings of the metal support layer, one or two of the first to third openings of the resin film are formed.

A vapor deposition mask is provided with: a resin film, which has at least one of first to third opening patterns in which first to third openings, for forming first to third subpixels that configure one pixel of a display panel, are disposed with a fixed periodicity; and a metal support layer, which is bonded to the resin film and has an opening pattern for fourth openings that are formed so as to be able to encompass all of the first to third openings of the resin film. In regions of the resin film exposed by the fourth openings of the metal support layer, one or two of the first to third openings of the resin film are formed.

[Object] To provide an organic electro-luminescence device in which occurrence of failures such as local abnormal light emission and current leakage is suppressed.

[Solution] An organic electro-luminescence device including: a recessed structure in which a first electrode is provided at a bottom part and a first member serves as a sidewall; a second electrode configured to cover an entire surface of the recessed structure; and an organic light emitting layer containing an evaporation material and sandwiched by the second electrode and the recessed structure. In the organic light emitting layer, a film thickness of a layer containing a leaky material is non-uniform at the bottom part of the recessed structure, and an entire film thickness of the organic light emitting layer is generally uniform at the bottom part of the recessed structure.

[Object] To provide an organic electro-luminescence device in which occurrence of failures such as local abnormal light emission and current leakage is suppressed.

[Solution] An organic electro-luminescence device including: a recessed structure in which a first electrode is provided at a bottom part and a first member serves as a sidewall; a second electrode configured to cover an entire surface of the recessed structure; and an organic light emitting layer containing an evaporation material and sandwiched by the second electrode and the recessed structure. In the organic light emitting layer, a film thickness of a layer containing a leaky material is non-uniform at the bottom part of the recessed structure, and an entire film thickness of the organic light emitting layer is generally uniform at the bottom part of the recessed structure.

A display device includes a support material on which a display area, a terminal, and a folding area are disposed. The display area includes a TFT and a light-emitting device layer. The display device includes: a first resin layer and a second resin layer extending along the display area, the terminal, and the folding area; and an organic SOG film provided between the first resin layer and the second resin layer, and laid through the folding area.

According to a flexible light-emitting device production method of the present disclosure, after an intermediate region (30i) and a flexible substrate region (30d) of a plastic film (30) of a multilayer stack (100) are divided, the interface between the plastic film (30) and a glass base (10) is irradiated with lift-off light. The multilayer stack (100) is separated into the first portion (110) and the second portion (120) while the multilayer stack (100) is kept in contact with the stage (212). The first portion (110) includes the intermediate region (30i) and a light-emitting device (1000) which are adhered to the stage (212). The light-emitting device (1000) includes a functional layer region (20) and the flexible substrate region (30d). The second portion (120) includes the glass base (10). The intermediate region (30i) adhered to the stage (212) is removed from the stage while the light-emitting device (1000) is kept adhered to the stage.

According to a flexible light-emitting device production method of the present disclosure, after an intermediate region (30i) and a flexible substrate region (30d) of a plastic film (30) of a multilayer stack (100) are divided, the interface between the flexible substrate region (30d) and a glass base (10) is irradiated with lift-off light. The multilayer stack (100) is separated into the first portion (110) and the second portion (120) while the multilayer stack (100) is kept in contact with the stage (210). The first portion (110) includes a plurality of light-emitting devices (1000) which are in contact with the stage (210). The light-emitting devices (1000) include a plurality of functional layer regions (20) and the flexible substrate region (30d). The second portion (120) includes the glass base (10) and the intermediate region (30i). The step of irradiating with the lift-off light includes forming the lift-off light from a plurality of arrayed light sources such that the irradiation intensity of the lift-off light for at least part of the interface between the intermediate region (30i) and the glass base (10) is lower than the irradiation intensity of the lift-off light for the interface between the flexible substrate region (30d) and the glass base (10).