The present invention provides a luminescent film containing at least a phosphorescent compound and a fluorescent compound, wherein the convolution integral value J of the emission spectrum of the phosphorescent compound and the absorption spectrum of the fluorescent compound satisfies equation (1), the light emission from the fluorescent compound accounts for at least 90% of the emission spectrum of the luminescent film, and the absolute photoluminescence quantum efficiency (PLQE) of the luminescent film is represented by equation (2). Equation (1): J1.510.sup.14, Equation (2): PLQE (a film composed of a phosphorescent compound and a host compound)0.9PLQE (a film containing a phosphorescent compound and a fluorescent compound) [The lowest triplet excited state of the host compound is higher than the lowest triplet excited state of the phosphorescent compound, and does not suppress the luminescent property of the phosphorescent compound.]

A wiring line is provided on a TFT layer, in which the wiring line is formed in the same layer and formed of the same material as those of a reflection electrode. The reflection electrode includes a plurality of metallic conductive layers made up of a low resistance metallic material, an oxide-based lower transparent conductive layer provided on a lower surface side of a lowermost metallic conductive layer constituting a lowermost layer, an oxide-based upper transparent conductive layer having light reflectivity and provided on an upper surface side of an uppermost metallic conductive layer constituting an uppermost layer, and an oxide-based intermediate transparent conductive layer provided between the plurality of metallic conductive layers.

A first region of a valid portion formed on a mask sheet has a shape corresponding to a shape of each of active regions and provided for each active region of a vapor target substrate. A second region of the valid portion is located outside of the first region, and includes a plurality of vapor deposition holes (H) covered with a hauling sheet.

A method of fabricating a semiconductor device, which includes a separation step and has a high yield, is provided. A metal layer is formed over a substrate, fluorine is supplied to the metal layer, and the metal layer is then oxidized, whereby a metal compound layer is formed. A functional layer is formed over the metal compound layer, heat treatment is performed on the metal compound layer, and the functional layer is separated from the substrate with use of the metal compound layer. By performing first plasma treatment using a gas containing fluorine, fluorine can be supplied to the metal layer. By performing second plasma treatment using a gas containing oxygen, the metal layer supplied with fluorine can be oxidized.

The present invention addresses the problem of providing: a luminescent thin film, a luminescent multilayered film, and an organic electroluminescent element that have luminescence properties with excellent storage stability in atmospheric air; and a production method therefor. This luminescent thin film contains a luminescent compound A, and is characterized by containing 0.0001 mass % or more of an oxide B of luminescent compound A in terms of the luminescent compound A.

An organic electronic device manufacturing method according to one embodiment comprises: a device base forming step of forming a device base in which a first electrode, a device functional part including an organic layer, and a second electrode are provided in this order on a substrate; a dehydration step S22 of heating and dehydrating a protective film-equipped sealing member, in which a protective film is laminated, via an adhesive layer, on a sealing member having a sealing base, the adhesive layer laminated on an one surface of the sealing base, and a resin layer laminated on an other surface of the sealing base, while the protective film-equipped sealing member 10 is conveyed using at least one roll; and a sealing member bonding step of removing the protective film from the protective film-equipped sealing member after subjected to the dehydration step, and then bonding the sealing member to the device base through the adhesive layer, wherein in the dehydration step, a temperature of a roll surface of the roll R1 in contact with the protective film-equipped sealing member being conveyed is higher than or equal to a glass transition temperature of the resin layer.

A manufacturing method for an EL device including a mother substrate and a layered body including a light emitting element, the method includes irradiating a laser beams to peel the mother substrate and the layered body from each other, wherein the mother substrate and the layered body contact with each other via a resin layer of the layered body, a protection material is formed on a face of the layered body, the face of the layered body not contacting with the mother substrate, the irradiating includes irradiating a first laser beam and a second laser beam after the first laser beam, and an absorption rate of the second laser beam irradiation by the resin layer is greater than an absorption rate of the second laser beam irradiation by the protection material.

A vapor deposition mask (100) includes a resin layer (10) having a first primary surface (11) and a second primary surface (12), and having a plurality of openings (13), and a metal layer (20) having a third primary surface (21) and a fourth primary surface (22), and provided on the first primary surface of the resin layer so that the fourth primary surface is located on the resin layer side, wherein the metal layer is shaped so that the plurality of openings are exposed therethrough. A portion of the first primary surface of the resin layer that is in contact with the metal layer, a portion of the first primary surface of the resin layer that is not in contact with the metal layer, and the third primary surface of the metal layer each include a rough surface region having a depressed/protruding shape.

According to an embodiment of the invention, the organic EL device (100) comprises: an element substrate (20) having a substrate (1) and a plurality of organic EL elements (3) supported by the substrate; a thin film encapsulation structure (10) formed above the plurality of organic EL elements and having at least one compound layered body (10S) constituted by a first inorganic barrier layer (12), an organic barrier layer (14) in contact with the upper surface of the first inorganic barrier layer and having a plurality of solid sections spread out discretely, and a second inorganic barrier layer (16) in contact with the upper surface of the first inorganic barrier layer and the upper surfaces of the plurality of solid sections of the organic barrier layer; an organic planarization layer (42) provided above the thin film encapsulation structure and formed from a photosensitive resin; and a touch sensor layer (50) disposed above the organic planarization layer.

According to a flexible OLED device production method of the present disclosure, after an intermediate region (30i) and flexible substrate regions (30d) of a plastic film (30) of a multilayer stack (100) are divided from one another, the interface between the flexible substrate regions (30d) and a glass base (10) is irradiated with laser light. The multilayer stack (100) is separated into a first portion (110) and a second portion (120) while the multilayer stack (100) is in contact with a stage (212). The first portion (110) includes a plurality of OLED devices (1000) which are in contact with the stage (212). The OLED devices (1000) include a plurality of functional layer regions (20) and the flexible substrate regions (30d). The second portion (120) includes the glass base (10) and the intermediate region (30i).