To provide a vapor deposition source of which material usage efficiency is higher as compared with the related art. A vapor deposition source (10) includes a vapor deposition particles ejecting unit (30) configured to include multistage of nozzle units layered apart from each other in a vertical direction, each of the nozzle units including at least one vapor deposition nozzle (32, 52), and at least one space part (43) provided between the multistage of vapor deposition nozzles, and a vacuum exhaust unit (14) connected with the at least one space part (43).

To provide a vapor deposition source of which material usage efficiency is higher as compared with the related art. A vapor deposition source (10) includes a vapor deposition particles ejecting unit (30) configured to include multistage of nozzle units layered apart from each other in a vertical direction, each of the nozzle units including at least one vapor deposition nozzle (32, 52), and at least one space part (43) provided between the multistage of vapor deposition nozzles, and a vacuum exhaust unit (14) connected with the at least one space part (43).

An organic EL device includes an active region including a plurality of organic EL elements and a peripheral region in a region other than the active region. The organic EL device includes an element substrate including a substrate supporting the organic EL elements; and a thin film encapsulation structure covering the organic EL elements and including a first inorganic barrier layer, an organic barrier layer in contact with a top surface of the first inorganic barrier layer, and a second inorganic barrier layer in contact with the top surface of the first inorganic barrier layer and a top surface of the organic barrier layer. The peripheral region includes a first protruding structure including a portion extending along at least one side of the active region, the first protruding structure supported by the substrate, and an extending portion, of the first inorganic barrier layer, extending onto the first protruding structure.

A display device includes a plurality of picture elements. The plurality of picture elements are formed with anodes and cover layers cover an outer periphery of a corresponding anode of the anodes, the cover layer allowing an opening of the corresponding anode to be formed. The cover layer is spaced apart from the cover layer of a different anode of the anodes, the different anode being adjacent to the anode.

An embodiment provides a display device manufacturing method comprising the steps of: preparing a substrate having a plurality of semiconductor chips arranged thereon (S1); bonding at least one first semiconductor chip of the plurality of semiconductor chips to a transfer member (S2); irradiating laser light to the first semiconductor chip to separate the first semiconductor chip from the substrate (S3); disposing the first semiconductor chip on a panel substrate of a display device by means of the transfer member (S4); and irradiating light to the transfer member to separate the first semiconductor chip from the transfer member (S5), wherein the transfer member comprises: a transfer layer and a bonding layer disposed on one surface of the transfer layer; the bonding layer comprises at least one bonding protrusion; and the first semiconductor chip is bonded to the bonding protrusion in step S2.

An embodiment provides a display device manufacturing method comprising the steps of: preparing a substrate having a plurality of semiconductor chips arranged thereon (S1); bonding at least one first semiconductor chip of the plurality of semiconductor chips to a transfer member (S2); irradiating laser light to the first semiconductor chip to separate the first semiconductor chip from the substrate (S3); disposing the first semiconductor chip on a panel substrate of a display device by means of the transfer member (S4); and irradiating light to the transfer member to separate the first semiconductor chip from the transfer member (S5), wherein the transfer member comprises: a transfer layer and a bonding layer disposed on one surface of the transfer layer; the bonding layer comprises at least one bonding protrusion; and the first semiconductor chip is bonded to the bonding protrusion in step S2.

Certain exemplary embodiments relate to entertainment systems that interact with users to provide access to media appropriate to and/or customized for a particular user using the entertainment system, the location at which the entertainment system is being accessed, and/or a predefined event. For example, in certain exemplary embodiments, an entertainment system in a location is configured to provide jukebox-related and entertainment system mediated services that are accessible from within and from the outside of the location, and provide (1) attract or flight media operations, (2) browsing services, and/or (3) search screens appropriate to and/or customized for a particular user using the entertainment system, the location at which the entertainment system is being accessed, and/or a predefined event. Such screens may be provided with a three-dimensional look-and-feel in certain exemplary embodiments.

Certain exemplary embodiments relate to entertainment systems that interact with users to provide access to media appropriate to and/or customized for a particular user using the entertainment system, the location at which the entertainment system is being accessed, and/or a predefined event. For example, in certain exemplary embodiments, an entertainment system in a location is configured to provide jukebox-related and entertainment system mediated services that are accessible from within and from the outside of the location, and provide (1) attract or flight media operations, (2) browsing services, and/or (3) search screens appropriate to and/or customized for a particular user using the entertainment system, the location at which the entertainment system is being accessed, and/or a predefined event. Such screens may be provided with a three-dimensional look-and-feel in certain exemplary embodiments.

A vapor deposition apparatus disclosed by an embodiment comprises: a vacuum chamber (8); a mask holder (15) for holding a deposition mask 1; a substrate holder (29) for holding a substrate for vapor deposition (2); an electromagnet (3) disposed above a surface; a vapor deposition source 5 for vaporizing or sublimating a vapor deposition material; and a heat pipe (7) including at least a heat absorption part (71) and a heat dissipation part (72), the heat absorption part being in contact with the electromagnet (3), and the heat dissipation part being derived to an outside of the vacuum chamber (8). The heat pipe (7) and the electromagnet (3) are in intimate contact with each other at an area of a contact part between the heat pipe (7) and the electromagnet (3), the area being equal to or more than a cross-sectional area within an inner perimeter of a coil (32).

Provided is a vapor deposition mask that suppresses heat conduction at a frame thereof, that achieves weight reduction, and that can tolerate high stress at a portion of the frame to which particularly high stress is applied. The present invention has: a mask main body (10) at which an opening pattern is formed; and a frame (15) to which at least a portion of a peripheral edge part of the mask main body is joined. At least a portion of the frame is formed as a rod-like lateral frame (15b) that is formed by laminating, via connection surface plates (153), unit structures (155) for a sandwich structure in which a surface plate (152) is stuck to a surface that faces at least portions of core parts (151) that contain vacant space.