A method of manufacturing a display device includes: the first substrate preparation step of preparing a first substrate including insular, first electrodes, one for each of the plurality of subpixels; the second substrate preparation step of preparing a second substrate including a second electrode; the subpixel-specific layer forming step of forming insular subpixel-specific layers, one for each of the first electrodes, on either one or both of a top face of the first substrate and a top face of the second substrate; the nanoparticle layer forming step of forming a nanoparticle layer including a stack of nanoparticles on either one or both of the topmost face of the first substrate and the topmost face of the second electrode; and the bonding step of bonding the first substrate and the second substrate together via the nanoparticle layer in such a manner that the first electrodes face the second electrode.

A method for manufacturing a light-emitting device includes performing application, performing temperature raising, and performing first light irradiation. In the performing application, a solution including quantum dots, a ligand, an inorganic precursor, and a solvent is applied on a position overlapping with the substrate. The quantum dots each includes a core and a first shell coating the core. In the performing temperature raising, a temperature is raised until the ligand melts and the solvent vaporizes after the performing application. In the performing first light irradiation, light irradiation is performed after the performing temperature raising. In the performing first light irradiation, the inorganic precursor is epitaxially grown around the first shell to form a second shell coating the first shell, and an inorganic film in which the inorganic precursor is epitaxially grown at an interface between the quantum dot layer and the first charge transport layer is formed.

A method for manufacturing a light-emitting device includes forming the quantum dot layer, wherein the forming the quantum dot layer includes performing first application of applying, on a position overlapping with the substrate, a first solution including quantum dots, a ligand, a first inorganic precursor, and a first solvent, the quantum dots each including a core and a first shell coating the core, the ligand coordinating with each of the quantum dots, performing temperature raising of raising a temperature until the ligand melts and the first solvent vaporizes after the performing first application, performing first temperature lowering of lowering a temperature to a melting point of the ligand or lower after the performing temperature raising, and performing first light irradiation of epitaxially growing the first inorganic precursor around the first shell by first light irradiation after the performing first temperature lowering to form a second shell coating the first shell.

In a TFT layer forming step, first, a semiconductor layer on a resin substrate is formed by performing a semiconductor layer forming step, and subsequently a gate insulating film is formed to cover the semiconductor layer by performing a gate insulating film forming step, and then a first metal layer is formed by performing a first metal film deposition step, a first photo step, and a first etching step, and a second metal layer is formed by performing a second metal film deposition step, a second photo step, and a second etching step, thereby forming a gate layer in which the first metal layer and the second metal layer are layered.

A display device includes a plurality of pixels. Each of the plurality of pixels includes a first electrode, a second electrode, a light-emitting layer provided between the first electrode and the second electrode, a first charge transport layer provided between the first electrode and the light-emitting layer, and a second charge transport layer provided between the second electrode and the light-emitting layer. The first charge transport layer includes a first charge transport material and a first nanofiber.

A display device includes a first electrode, a second electrode, a light-emitting layer provided between the first electrode and the second electrode, and a charge transport layer provided between the first electrode and the second electrode and containing a charge transport material configured to transport a charge to the light-emitting layer. At least one layer of the light-emitting layer and the charge transport layer is a function layer including a nanofiber and a photosensitive material.

Provided is a novel metal complex that can be used as an electron transporting material. A metal complex represented by the following Formula (1) to the following Formula (3). R.sup.A1 to R.sup.A9, R.sup.C1 to R.sup.C8, and R.sup.E1 to R.sup.E6 are each independently a single bond, an alkylene group, an arylene group, a heteroarylene group, or a group represented by —R.sup.P1—P(═O)R.sup.P2—R.sup.P3—, R.sup.B1 to R.sup.B9, R.sup.D1 to R.sup.D8, and R.sup.F1 to R.sup.F6 are each independently a hydrogen atom, an. alkyl group, an aryl group, a heteroaryl group, an alkoxy group, an aryloxy group, a heteroaryloxv group, an amino group, a cyano group, a halogen atom, or a hydroxy group, one or more selected from the group consisting of R.sup.B1 to R.sup.B9 are a phenanthrolinyl group, one or more selected from the group consisting of R.sup.D1 to R.sup.D8 are a phenanthrolinyl group, and one or more selected from the group consisting of R.sup.F1 to R.sup.F6 are a phenanthrolinyl group, M is an alkali metal or an alkaline earth metal, Z is 1 or 2, and X is O or S.

A light-emitting device includes a light-emitting layer that includes, in each of a plurality of pixels: a light-emitting region in which a drive current flows between a first electrode and a second electrode; and a non-light-emitting region in which no drive current flows between the first electrode and the second electrode. The light-emitting region is divided into a plurality of subregions by a non-light-emitting region in a plan view.

A display device includes: a base substrate; a thin-film transistor layer provided on the base substrate and having a stack of, in sequence, a lower wire, a flattening film composed of an organic insulating film, an interlayer insulating film composed of an inorganic insulating film, and an upper wire; and a light-emitting element layer, wherein the flattening film has a first contact hole formed to pass through the flattening film and formed for electrically connecting the lower wire and the upper wire together, the interlayer insulating film has a second contact hole formed to pass through the interlayer insulating film and formed for electrically connecting the lower wire and the upper wire together, and at least a part at an edge of the flattening film provided with the first contact hole is exposed from an edge of the interlayer insulating film provided with the second contact hole.

In a display device (2) including a light-emitting element layer (5) formed on a thin film transistor layer, the light-emitting element layer includes pixel electrodes (22), a cover film (23), a light-emitting layer (24e), and a common electrode (25). The pixel electrodes each include a flat first portion (P1) overlapping with the light-emitting layer and a second portion (P2) surrounding the first portion. The first portion protrudes toward the light-emitting layer compared to the second portion. The cover film (23) covers the second portion (P2) and causes the first portion (P1) to expose. An upper face (22f) of the first portion and an upper face (23f) of the cover film form a flush planar face (FS).