A reflective optical element (17), in particular for reflecting EUV radiation (16), includes: a substrate (25), and a reflective coating (26) applied to the substrate (25). In one disclosed aspect, the substrate (25) is doped within its volume (V) with at least one precious metal (27). In a further disclosed aspect, the reflective coating (26) and/or a structured layer (28) that is formed between the substrate (25) and the reflective coating (26) is doped with at least one precious metal (27). Also disclosed are an optical arrangement, preferably a projection exposure apparatus for microlithography, in particular for EUV lithography, which includes at least one such reflective optical element (17), and a method of producing such a reflective optical element (17).

Methods, apparatus, and processes which use Extreme ultraviolet radiation (EUV) and/or soft X-ray wavelengths to read, image, edit, locate, identify, map, alter, delete, repair and sequence genes are described. An EUV scanning tool which allows high throughput genomic scanning of DNA, RNA and protein sequences is also described. A database which records characteristic absorption spectra of gene sequences is also described.

An EUV light source including a vacuum chamber, a droplets injector operatively connected to the vacuum chamber for directing the droplets into the vacuum chamber, droplets produced by the droplets injector wherein the droplets have one side and another side opposite the one side, the droplets including a solid higher Z bead in a low Z liquid, and at least one laser beam directed onto the one side of the droplets.

In this patent, we teach methods to generate coherent X-ray and UUV rays beams for X ray and UUV microscopes using intense femtosecond pulses resulting the Ultra-Supercontinuum (USC) and Higher Harmonic Generation (HHG) from χ3 and χ.sup.5 media produce from electronic and molecular Kerr effect. The response of n.sub.2 (χ3) and n.sub.4 (χ5) at the optical frequency from instantaneously response of carrier phase of envelope results in odd HHG and spectral broadening about each harmonic on the anti-Stokes side of the pump pulse at wo typically in the visible, NIR, and MIR. From the slower molecular Kerr response on femtosecond to picosecond from orientation and molecular motion on n.sub.2 and n.sub.4 which follow the envelope of optical field of the laser gives rise to extreme broadening without HHG. The resulting spectra extend on the Stokes side towards the IR, RF to DC covering most of the electromagnetic spectrum. These HHG and Super broadening covering UUV to X rays and possibly to gamma ray regime for microscopes.

A method for inspecting an extreme ultraviolet (EUV) light source includes: removing a collector mirror of the EUV light source from a collector chamber; installing an inspection apparatus within the collector chamber, the apparatus including a selectively extendable and retractable member and a camera at one end of the member; operating a first actuator to extend the member along a path through the interior chamber of the EUV light source, thereby moving the camera to a given position within the interior chamber of the EUV light source; operating a second actuator to pan the camera about an axis of rotation, thereby establishing a given camera orientation within the interior of the EUV light source; and, capturing an image of the interior chamber of the EUV light source with the camera while the camera is at the given position and orientation established by the operation of the first and second actuators.

Methods and systems for generating X-ray illumination from a laser produced plasma (LPP) employing a low atomic number, cryogenic target are presented herein. A highly focused, short duration laser pulse is directed to a low atomic number, cryogenically frozen target, igniting a plasma. In some embodiments, the target material includes one or more elements having an atomic number less than 19. In some embodiments, the low atomic number, cryogenic target material is coated on the surface of a cryogenically cooled drum configured to rotate and translate with respect to incident laser light. In some embodiments, the low atomic number, cryogenic LPP light source generates multiple line or broadband X-ray illumination in a soft X-ray (SXR) spectral range used to measure structural and material characteristics of semiconductor structures. In some embodiments, Reflective, Small-Angle X-ray Scatterometry measurements are performed with a low atomic number, cryogenic LPP illumination source as described herein.

An EUV light source including a vacuum chamber, a droplets injector operatively connected to the vacuum chamber for directing the droplets into the vacuum chamber, droplets produced by the droplets injector wherein the droplets have one side and another side opposite the one side, the droplets including a solid higher Z bead in a low Z liquid, and at least one laser beam directed onto the one side of the droplets.

A method and a system for generating intense, ultrashort pulses of XUV and soft X-ray radiation via high-order harmonic generation (HHG), the method comprising selecting a nonlinear solid target and a laser source; separating a beam from the laser source into a first laser beam and a second laser beam; focusing the first laser beam onto the nonlinear solid target, thereby generating a laser ablated plume; and compressing and frequency-doubling the second laser beam and directing a resulting second compressed and frequency-doubled laser beam to the laser ablated plume, thereby yielding high-order harmonic generation of radiation of photon energies in a range between 12 eV and 36 eV. A high-order harmonic source of radiation, comprising a nonlinear solid target; a laser source; a beam splitter separating a beam from the laser source into a first beam line and a second beam line; the first beam line comprising a first focusing unit directing a first, uncompressed, laser beam onto the nonlinear solid target, to generate a laser ablated plume; and the second beam line directing a second, compressed and frequency-doubled laser beam, to the laser ablated plume, yielding high-order harmonic generation of radiation of photon energies in a range between 12 eV and 36 eV.

A method of controlling a temperature of the semiconductor device includes operating an semiconductor apparatus; maintaining a temperature of a vessel of the semiconductor apparatus with a first cooling output by a cooling controller; heating the vessel for removing a material on the vessel; transferring a first signal, by a converter, to the cooling controller when heating the vessel; and reducing the first cooling output to a second cooling output by the cooling controller base on the first signal.

Methods and systems for generating X-ray illumination from a laser produced plasma (LPP) employing a low atomic number, cryogenic target are presented herein. A highly focused, short duration laser pulse is directed to a low atomic number, cryogenically frozen target, igniting a plasma. In some embodiments, the target material includes one or more elements having an atomic number less than 19. In some embodiments, the low atomic number, cryogenic target material is coated on the surface of a cryogenically cooled drum configured to rotate and translate with respect to incident laser light. In some embodiments, the low atomic number, cryogenic LPP light source generates multiple line or broadband X-ray illumination in a soft X-ray (SXR) spectral range used to measure structural and material characteristics of semiconductor structures. In some embodiments, Reflective, Small-Angle X-ray Scatterometry measurements are performed with a low atomic number, cryogenic LPP illumination source as described herein.