According to one aspect of the present invention, a charged particle beam irradiation apparatus includes an electromagnetic lens configured to refract the charged particle beam; a plurality of electrodes arranged in a magnetic field of the electromagnetic lens and arranged to surround an outer space of a passage region of the charged particle beam; a supply mechanism configured to supply a gas to the space surrounded by the plurality of electrodes; a potential control circuit configured to control potentials of the plurality of electrodes so that a plasma is generated in the space surrounded by the plurality of electrodes and movements of electrons or positive ions generated by the plasma are controlled; and a stage configured to dispose a substrate irradiated with a charged particle beam passing through the electromagnetic lens, wherein the substrate is irradiated with light radiated by the plasma.

Methods, apparatus, and processes which use Extreme ultraviolet radiation (EUV) and/or soft X-ray wavelengths to read, image, edit, locate, identify, map, alter, delete, repair and sequence genes are described. An EUV scanning tool which allows high throughput genomic scanning of DNA, RNA and protein sequences is also described. A database which records characteristic absorption spectra of gene sequences is also described.

Disclosed herein a high temperature plasma raw material supply apparatus capable of appropriately supplying high temperature plasma raw materials in which impurities are suppressed to a reservoir reserving high temperature plasma raw material in a liquid state. A tin filling mechanism includes a raw material reservoir unit rotatably arranged and configured to reserve a plurality of high temperature plasma raw materials in a solid state; a supply nozzle configured to supply the high temperature plasma raw materials to an outside of the raw material reservoir unit; a load lock unit provided between a housing and a chamber; and a supply path unit configured to guide the high temperature plasma raw materials supplied from the supply nozzle to the load lock unit. At least a part of the supply path unit is provided with a hole formed smaller than the high temperature plasma raw material in the solid state.

Methods, apparatus, and processes which use Extreme ultraviolet radiation (EUV) and/or soft X-ray wavelengths to read, image, edit, locate, identify, map, alter, delete, repair and sequence genes are described. An EUV scanning tool which allows high throughput genomic scanning of DNA, RNA and protein sequences is also described. A database which records characteristic absorption spectra of gene sequences is also described.

Disclosed herein a high temperature plasma raw material supply apparatus capable of appropriately supplying high temperature plasma raw materials in which impurities are suppressed to a reservoir reserving high temperature plasma raw material in a liquid state. A tin filling mechanism includes a raw material reservoir unit rotatably arranged and configured to reserve a plurality of high temperature plasma raw materials in a solid state; a supply nozzle configured to supply the high temperature plasma raw materials to an outside of the raw material reservoir unit; a load lock unit provided between a housing and a chamber; and a supply path unit configured to guide the high temperature plasma raw materials supplied from the supply nozzle to the load lock unit. At least a part of the supply path unit is provided with a hole formed smaller than the high temperature plasma raw material in the solid state.

According to one aspect of the present invention, a charged particle beam irradiation apparatus includes an electromagnetic lens configured to refract the charged particle beam; a plurality of electrodes arranged in a magnetic field of the electromagnetic lens and arranged to surround an outer space of a passage region of the charged particle beam; a supply mechanism configured to supply a gas to the space surrounded by the plurality of electrodes; a potential control circuit configured to control potentials of the plurality of electrodes so that a plasma is generated in the space surrounded by the plurality of electrodes and movements of electrons or positive ions generated by the plasma are controlled; and a stage configured to dispose a substrate irradiated with a charged particle beam passing through the electromagnetic lens, wherein the substrate is irradiated with light radiated by the plasma.

A radiation system comprises a fuel emitter configured to provide fuel to a plasma formation region, a laser arranged to provide a laser beam at the plasma formation region incident on the fuel to generate a radiation emitting plasma, and a reflective or transmissive device (30) arranged to receive radiation emitted by the plasma and to reflect or transmit at least some of the received radiation along a desired path, wherein the reflective or transmissive device comprises a body configured to reflect and/or transmit said at least some of the radiation, and selected secondary electron emission (SEE) material (34) arranged relative to the body such as to emit secondary electrons in response to the received radiation, thereby to clean material from a surface of the device.

An Electron-coupled transformer for generating a high voltage output pulse as an amplified version of an input pulse includes a cylindrical triode electron tube with a central anode along main axis and a grid and cathode radially spaced from the anode. The anode has a first end directly grounded and a second end insulated from a direction connection to ground. The cathode and the grid form a traveling wave electron gun that produces, when the grid is grounded through a phase matching network, a radially symmetrical collapsing traveling wave of ground potential in the Transverse Electromagnetic mode. The foregoing wave of ground potential causes a beam of electrons to flow from the cathode to the anode and causes a voltage output pulse to be produced on the second end of the anode, whose magnitude is an amplified version of the input pulse that is injected into the cathode.

An extreme ultraviolet (EUV) lithography system includes a collector designed to collect and reflect EUV radiation, a cover integrated with the collector, a first exhaust line connected to the cover and configured to receive debris vapor from the collector, a debris trapper connected to the first exhaust line and configured to trap the debris vapor, and a second exhaust line connected to the debris trapper.

An apparatus, and a method of using the same, for monitoring and removing tin contamination on windows of an extreme ultraviolet lithography (EUVL) radiation source vessel includes an optical sensing module embedded in one or more monitoring units for inspecting the EUV radiation source. The optical sensing module measures intensity of infrared (IR) radiation. The apparatus further includes heating elements, hydrogen gas supply module, and a gas removal module for removing the tin contamination when the intensity of the IR radiation falls below a threshold of a baseline intensity corresponding to a substantially uncontaminated window.