A method of processing a trench, via, hole, recess, void, or other feature that extends a depth into a substrate to a base or bottom and has an opening with high aspect ratio (into depth from opening to base or bottom divided by minimum space of the trench therebetween) by irradiation with an accelerated neutral beam derived from an accelerated gas cluster ion beam for processing materials at the base or bottom of the opening.

A method of processing a trench, via, hole, recess, void, or other feature that extends a depth into a substrate to a base or bottom and has an opening with high aspect ratio (into depth from opening to base or bottom divided by minimum space of the trench therebetween) by irradiation with an accelerated neutral beam derived from an accelerated gas cluster ion beam for processing materials at the base or bottom of the opening.

Atom-scale particles, e.g., neutral and charged atoms and molecules, are pre-cooled, e.g., using magneto-optical traps (MOTs), to below 100 K to yield cold particles. The cold particles are transported to an atom-chip cell which cools the cold particles to below 1 K; these particles are stored in a reservoir within the atom-chip cell so that they are readily available to replenish a sensor population of particles in quantum superposition. A baffle is disposed between the MOTs and the atom-chip cell to prevent near-resonant light leaking from the MOTs from entering the atom-chip cell (and exciting the ultra-cold particles in the reservoir). The transporting from the MOTs to the atom-chip cell is effected by moving optical fringes of optical lattices and guiding the cold particles attached to the fringes along a meandering path through the baffle and into the atom-chip cell.

Atom-scale particles, e.g., neutral and charged atoms and molecules, are pre-cooled, e.g., using magneto-optical traps (MOTs), to below 100 K to yield cold particles. The cold particles are transported to an atom-chip cell which cools the cold particles to below 1 K; these particles are stored in a reservoir within the atom-chip cell so that they are readily available to replenish a sensor population of particles in quantum superposition. A baffle is disposed between the MOTs and the atom-chip cell to prevent near-resonant light leaking from the MOTs from entering the atom-chip cell (and exciting the ultra-cold particles in the reservoir). The transporting from the MOTs to the atom-chip cell is effected by moving optical fringes of optical lattices and guiding the cold particles attached to the fringes along a meandering path through the baffle and into the atom-chip cell.

An atomic clock system includes a magneto-optical trap (MOT) system that traps alkali metal atoms in a cell during a trapping stage of each of sequential coherent population trapping (CPT) cycles. The system also includes an interrogation system that generates an optical difference beam comprising a first optical beam having a first frequency and a second optical beam having a second frequency different from the first frequency. The interrogation system includes a direction controller that periodically alternates a direction of the optical difference beam through the cell during a CPT interrogation stage of each of the sequential clock measurement cycles to drive CPT interrogation of the trapped alkali metal atoms. The system also includes an oscillator system that adjusts a frequency of a local oscillator based on an optical response of the CPT interrogated alkali metal atoms during a state readout stage in each of the sequential clock measurement cycles.

An atomic clock system includes a magneto-optical trap (MOT) system that traps alkali metal atoms in a cell during a trapping stage of each of sequential coherent population trapping (CPT) cycles. The system also includes an interrogation system that generates an optical difference beam comprising a first optical beam having a first frequency and a second optical beam having a second frequency different from the first frequency. The interrogation system includes a direction controller that periodically alternates a direction of the optical difference beam through the cell during a CPT interrogation stage of each of the sequential clock measurement cycles to drive CPT interrogation of the trapped alkali metal atoms. The system also includes an oscillator system that adjusts a frequency of a local oscillator based on an optical response of the CPT interrogated alkali metal atoms during a state readout stage in each of the sequential clock measurement cycles.

A uniaxial counter-propagating monolaser atom trap cools and traps atoms with a single a laser beam and includes: an atom slower that slows atoms to form slowed atoms; an optical diffractor including: a first diffraction grating that receives primary light and produces first reflected light; a second diffraction grating that receives primary light and produces second reflected light; and a third diffraction grating that receives the primary light and produces third reflected light; and a trapping region that forms trap light from the reflected lights and receives slowed atoms to produce trapped atoms from the slowed atoms that interact with the trap light.

A uniaxial counter-propagating monolaser atom trap cools and traps atoms with a single a laser beam and includes: an atom slower that slows atoms to form slowed atoms; an optical diffractor including: a first diffraction grating that receives primary light and produces first reflected light; a second diffraction grating that receives primary light and produces second reflected light; and a third diffraction grating that receives the primary light and produces third reflected light; and a trapping region that forms trap light from the reflected lights and receives slowed atoms to produce trapped atoms from the slowed atoms that interact with the trap light.

Plasma processing systems and methods are provided. In one example, a system includes a processing chamber having a workpiece support. The workpiece is configured to support a workpiece. The system includes a plasma source configured to induce a plasma from a process gas in a plasma chamber to generate one or more species of negative ions. The system includes a grid structure configured to accelerate the one or more negative ions towards the workpiece. The grid structure can include a first grid plate, a second grid plate, and one or more magnetic elements positioned between the first grid plate and second grid plate to reduce electrons accelerated through the first grid plate. The system can include a neutralizer cell disposed downstream of the grid structure configured to detach extra electrons from ions of the one or more species of negative ions to generate energetic neutral species for processing the workpiece.

A method determines a total velocity average cross-section parameter .sub.tot in a relationship of the form .sub.loss(U)=n.sub.b.sub.tot.Math.(U, U.sub.d), where: .sub.loss(U) is a rate of exponential loss of sensor atoms from a cold atom sensor trap of trap depth potential energy U in a vacuum environment due to collisions with residual particles in the vacuum environment; n.sub.b is a number density of residual particles in the vacuum environment; U.sub.d is a parameter given by

[00001]$U_d=\sqrt{2.Math.k_B.Math.T/m_{\mathrm{bg}}}.Math.\frac{4.Math..Math..Math.{}^2}{m_t.Math.{}_{\mathrm{tot}}.Math.v}$

which relates the masses of the sensor atoms m.sub.t and residual particles m.sub.bg to the total velocity average cross-section parameter .sub.tot; and (U, U.sub.d) is a function of the trap depth potential energy U and the parameter U.sub.d which models a naturally occurring