Provided is a hexagonal boron nitride powder that can achieve higher thermal conductivity when added as a filler to resin. A plasma treatment method of plasma-treating a hexagonal boron nitride powder under reduced pressure comprises: storing the hexagonal boron nitride powder in a treatment container; supplying a plasma generating gas into the treatment container and maintaining inside of the treatment container at a pressure lower than atmospheric pressure; applying high frequency waves to an electrode installed outside the treatment container while rotating the treatment container about a central axis of the treatment container as a rotation axis in a state in which the rotation axis of the treatment container is inclined with respect to horizontal, to plasma-treat the hexagonal boron nitride powder in the treatment container; and cooling one or both of the treatment container and the electrode during the plasma treatment.

A matchless plasma source is described. The matchless plasma source includes a controller that is coupled to a direct current (DC) voltage source of an agile DC rail to control a shape of an amplified square waveform that is generated at an output of a half-bridge transistor circuit. The matchless plasma source further includes the half-bridge transistor circuit used to generate the amplified square waveform to power an electrode, such as an antenna, of a plasma chamber. The matchless plasma source also includes a reactive circuit between the half-bridge transistor circuit and the electrode. The reactive circuit has a high-quality factor to negate a reactance of the electrode. There is no radio frequency (RF) match and an RF cable that couples the matchless plasma source to the electrode.

A matchless plasma source is described. The matchless plasma source includes a controller that is coupled to a direct current (DC) voltage source of an agile DC rail to control a shape of an amplified square waveform that is generated at an output of a half-bridge transistor circuit. The matchless plasma source further includes the half-bridge transistor circuit used to generate the amplified square waveform to power an electrode, such as an antenna, of a plasma chamber. The matchless plasma source also includes a reactive circuit between the half-bridge transistor circuit and the electrode. The reactive circuit has a high-quality factor to negate a reactance of the electrode. There is no radio frequency (RF) match and an RF cable that couples the matchless plasma source to the electrode.

A high-current, compact, conduction cooled superconducting radio-frequency cryomodule for particle accelerators. The cryomodule will accelerate an electron beam of average current up to 1 ampere in continuous wave (CW) mode or at high duty factor. The cryomodule consists of a single-cell superconducting radio-frequency cavity made of high-purity niobium, with an inner coating of Nb.sub.3Sn and an outer coating of pure copper. Conduction cooling is achieved by using multiple closed-cycle refrigerators. Power is fed into the cavity by two coaxial couplers. Damping of the high-order modes is achieved by a warm beam-pipe ferrite damper.

A neutron beam source generation system, a neutron beam source stabilization control system, and a neutron beam source generation method are provided. The neutron beam source generation system includes an accelerator, a target, and a calibration module. The accelerator is configured to generate a proton beam. A neutron beam source is generated by irradiating the target with the proton beam. The calibration module includes a pair of electromagnet components, a profile-measuring component, a current-measuring component, and a Faraday cup component. The calibration module uses the pair of electromagnet components to control the distribution of the proton beam according to the profile distribution of the proton beam as measured by the profile-measuring component. The calibration module adjusts the current of the proton beam according to the first current value as measured by the current-measuring component, the second current value as measured by the Faraday cup component, or both.

A high-temperature superconducting plasma thruster system, having variable temperature ranges and being applied in space, is provided. The high-temperature superconducting plasma thruster system includes: a cathode-anode assembly, a high-temperature superconducting magnet system, a supporting and adjusting platform, a power-and-gas supply and cooling system, and an obtaining control system. The cathode-anode assembly is disposed at a center of a ring of the high-temperature superconducting magnet system; the cathode-anode assembly and the high-temperature superconducting magnet system are spatially engaged with each other by the supporting and adjusting platform to form a main body of the thruster system; the power-and-gas supply and cooling system and the obtaining control system are located outside of the main body of the thruster system and are connected to the cathode-anode assembly and the high-temperature superconducting magnet system.

Solutions having a solvent and a cold atmospheric plasma dissolved in the solvent are described. Methods and systems of forming cold atmospheric plasma (CAP)-containing solutions are also described. A system for producing (CAP)-containing solutions includes a gas source; a plasma generating device having a hollow body fluidically coupled with the gas source, a closed proximal end and an open distal end, the hollow body receiving gas from the gas source, and at least one electrode in or about the hollow body and ionizing the gas to discharge a cold atmospheric plasma (CAP) from the open distal end; and a container for housing a fluid, the open distal end of the plasma generating device in fluid communication with an inner portion of the container. CAP-containing solutions can be used in treatment of cancer cells, infected tissue sterilization, microorganism inactivation, promotion of wound healing, skin regeneration, and blood coagulation, and teeth bleaching/whitening.

A radioisotope production apparatus (RI) comprising an electron source arranged to provide an electron beam (E). The electron source comprises an electron injector (10) and an electron accelerator (20). The radioisotope production apparatus (RI) further comprises a target support structure configured to hold a target (30) and a beam splitter (40) arranged to direct the a first portion of the electron beam along a first path towards a first side of the target (30) and to direct a second portion of the electron beam along a second path towards a second side of the target (30).

A plasma apparatus of a plasma processing system is provided. The plasma apparatus defines a toroidal plasma channel and includes multiple end blocks defining respective portions of the toroidal plasma channel. Each end block includes an end-block tube constructed from a first electrically conductive material and a dielectric coating disposed on an interior surface of the end-block tube. The plasma apparatus also includes multiple mid-blocks defining respective portions of the toroidal plasma channel. Each mid-block includes at least one heat sink located adjacent to a substantially linear tube with a thermal interface disposed therebetween. The thermal interface is in physical communication with the tube and the at least one heat sink. The mid-block tube has a substantially uniform wall thickness and is constructed from a dielectric material. The at least one heat sink is constructed from a second electrically conductive material.

A heat dissipation structure includes a housing. The housing has opposing upper and lower surfaces, and a fluid channel between the upper surface and the lower surface. The fluid channel is configured to allow a fluid to pass through, and the fluid channel includes an inlet buffer tank, an outlet buffer tank and a connecting structure. The inlet buffer tank has opposing first inner wall and second inner wall surfaces. The outlet buffer tank has opposing first inner wall and second inner wall surfaces, and the second inner wall surface is closer to the inlet buffer tank than the first inner wall surface. The connecting structure is disposed on the inlet buffer tank and the outlet buffer tank, in which the connecting structure has a first bevel surface and a second bevel surface connected to the upper surface of the housing.