An apparatus for generating a highly energetic plasma employs a low-energy neutral beam injected into a magnetically contained mirror plasma to produce plasma ions boosted in energy to fusion levels by a coordinated radiofrequency field.

The present disclosure provides a plasma reactor having a function of tuning low frequency RF power distribution, comprising: a reaction chamber in which an electrically conductive base is provided, the electrically conductive base being connected to a low frequency RF source via a first match, an electrostatic chuck being provided on the electrically conductive base, an upper surface of the electrostatic chuck being configured for fixing a to-be-processed substrate, an outer sidewall of the electrically conductive base being coated with at least one layer of plasma corrosion-resistance dielectric layer, a coupling ring made of a dielectric material surrounding an outer perimeter of the base, a focus ring being disposed above the coupling ring, the focus ring being arranged surround the electrostatic chuck and be exposed to a plasma during a plasma processing procedure; the plasma reactor further comprising an annular electrode that is disposed above the coupling ring but below the focus ring; a wire, a first end of which is electrically connected to the base, and a second end of which is connected to the annular electrode, a variable capacitance being serially connected to the wire.

A method for repetitive tuning of a matching network in a radio frequency plasma processing device, the method including detecting a condition within the matching network and determining if the condition is a known condition for the matching network. Also, finding a prior solution and to the condition when the condition is the known condition for the matching network; and replicating the prior solution for the condition in the matching network.

Embodiments of this disclosure describe an electrode biasing scheme that enables maintaining a nearly constant sheath voltage and thus creating a mono-energetic IEDF at the surface of the substrate that consequently enables a precise control over the shape of IEDF and the profile of the features formed in the surface of the substrate.

A matching network for a system having a non-linear load and powered by a first RF power supply operating at a first frequency and a second RF power supply operating at a second frequency. The matching network includes a first matching network section for providing an impedance match between the first power supply and the load. The matching network also includes a second matching network section for providing an impedance match between the second power supply and the load. A the first matching network section includes a first variable reactance, and the variable reactance is controlled in accordance with IMD sensed in the signal applied to the load by the first RF power supply. The variable reactance is adjusted in accordance with the IMD to reduce the detected IMD.

A method for repetitive tuning of a matching network in a radio frequency plasma processing device, the method including detecting a condition within the matching network and determining if the condition is a known condition for the matching network. Also, finding a prior solution and to the condition when the condition is the known condition for the matching network; and replicating the prior solution for the condition in the matching network.

The high-frequency amplifier assembly for a high-frequency generator, in particular for a high-frequency generator for operating a plasma generator, is provided with a signal generator for generating a high-frequency signal; a first amplifier transistor for amplifying the signal generated by the signal generator; an output terminal for outputting the amplified signal to an external load; an input network arranged between the signal generator and the first amplifier transistor for providing the high-frequency signal at the input of the amplifier transistor; an output network arranged between the amplifier transistor and the external load for providing a desired load impedance for the amplifier transistor; and an electronic voltage-limiting assembly arranged at the output terminal for limiting the output voltage at the output terminal.

Systems and related methods are disclosed for atmospheric plasma processing of microelectronic workpieces, such as semiconductor wafers. For disclosed embodiments, a radio frequency (RF) generator generates an RF signal that is distributed to one or more plasma sources within a process chamber. The process chamber has an atmospheric pressure between 350 to 4000 Torr. The plasma sources are then scanned across a microelectronic workpiece to apply plasma gasses generated by the plasma generators to the microelectronic workpiece. The plasma sources can be individually scanned and/or combined in arrays for scanning across the microelectronic workpiece. Linear and/or angular movement can be applied to the plasma sources and/or the microelectronic workpiece to provide the scanning operation. Various implementations are disclosed.

Plasma processing and power supply systems and methods are disclosed. The plasma processing system comprises a high-frequency generator configured to deliver power to a plasma chamber and a low-frequency generator configured to deliver power to the plasma chamber. A filter is coupled between the plasma chamber and the high-frequency generator, and the filter suppresses mixing products of high frequencies produced by the high-frequency generator and low frequencies produced by the low-frequency generator. The plasma processing system also comprises means for frequency tuning the high-frequency generator using a probe signal that is concurrently applied with the power applied to the plasma chamber at the primary frequency.

An integrated gas-enhanced electrosurgical generator. The generator comprises a high frequency power module, a low frequency power module and a gas module. The high frequency power module adapted to generate an electrical energy having a band of frequencies centered around a first frequency, wherein the electrical energy has a first power as the first frequency and a second power lower than the first power at a second frequency lower than the first frequency. The low frequency power module having an input connected to an output of the high frequency module. The low frequency module comprises a resonant transformer comprising a ferrite core, a primary coil and a secondary coil, the secondary coil having a larger number of turns than the primary coil, wherein the resonant transformer has a resonant frequency equal to the second frequency. The gas module is adapted to control a flow of an inert gas.