A treatment head for treating a surface area of a substrate includes a housing having a main surface configured to be arranged adjacent to and facing the surface area of the substrate to be treated. An exhaust opening in the main surface of the housing is connectable to an exhaust device via an exhaust gas path formed at least in part in the housing. A radiative heater is arranged in the housing to emit heat radiation through a radiation opening in the main surface. A plasma source is arranged in the housing to emit a plasma jet through a plasma exit opening in the main surface. An outlet opening in the main surface of the housing is connectable to a gas source via an gas path formed at least in part in the housing. The centers of the exhaust opening, the radiation opening, the plasma exit opening, and the outlet opening are arranged in the above order along a first direction of the main surface.

The present application relates to a cold plasma device (13) for treating a surface (6) with cold plasma. The device (13) has a cold plasma generator (14) adapted to generate cold plasma that produces reactive species for treating the surface (6). The device (13) also includes a treatment head (5) that is positionable relative to the surface (6) such that the reactive species are imparted toward the surface (6) during treatment. The device (13) is also provided with an air flow generator (8) to generate an air flow over the surface (6) and a controller (9) configured to control operation of the air flow generator (8) to generate an air flow over the surface (6) after the treatment has been completed such that remaining by-products of the cold plasma are dissipated.

Methods and systems for thermal management methods to control the rates of chemical reaction at the surface of a substrate being treated by atmospheric plasma. Integrated thermal management includes static heating and cooling of the plasma head and the substrate, as well as dynamic heating and cooling of the substrate surface, before and after the substrate passes the linear aperture of the atmospheric plasma head.

The present disclosure relates to the technical field of plasma cleaning, and provides a plasma cleaning head for an optical member and a plasma cleaning device, including a plasma circulation assembly having a hollow shape and a lens frame mounted on the plasma circulation assembly, wherein the plasma circulation assembly is provided with an outlet port which is larger than an ejection port adapted to eject a plasma and is adapted to diffuse the plasma, and the lens frame is in communication with and surrounds the outlet port, and the lens frame is adapted to embed an optical lens body so that the optical lens body is arranged opposite to the outlet port to help improve dispersion and stability of the plasma flowing from the outlet port to the optical lens body, and helps to promote the energy absorption of the plasma by the optical lens body.

The invention relates to a method for producing an injection-molded component with an insert part. An insert part is provided with an inorganic surface, and the insert part is at least partly overmolded during the injection-molding process. The region, which is overmolded during the injection-molding process, of the inorganic surface of the insert part is coated at least in some regions prior to being overmolded, wherein the inorganic surface is supplied with an atmospheric plasma beam and a precursor. The invention further relates to an injection-molded component with an insert part, said insert part having an at least partly overmolded inorganic surface. A layer which is applied by means of a plasma coating process, in particular a plasma polymerization process, is arranged at least in some regions between the inorganic surface and the overmolded plastic.

Embodiments disclosed herein include a plasma source, an abatement system and a vacuum processing system for abating compounds produced in semiconductor processes. In one embodiment, a plasma source includes a dielectric tube and a coil antenna surrounding the tube. The coil antenna includes a plurality of turns, and at least one turn is shorted. Selectively shorting one or more turns of the coil antenna helps reduce the inductance of the coil antenna, allowing higher power to be supplied to the coil antenna that covers more processing volume. Higher power supplied to the coil antenna and larger processing volume lead to an improved DRE.

The invention relates to a method for plasma treatment of at least one surface, wherein a plasma stream (7a) is guided from a plasma nozzle (1) and at least one surface is disposed outside a stream-directionally extended opening cross section of an opening (21) in the plasma nozzle (1), and the plasma stream (7a) is diverted onto the at least one surface.

A method is provided for activating a first surface for bonding to a second surface. In some embodiments, the method includes exposing the first surface to a plasma that has a high electron density in a range between 1?10.sup.9 cm.sup.?3 and 1?10.sup.12 cm.sup.?3 and a low electron temperature of less than 1 eV, and then bonding the first surface to the second surface. In some embodiments, the plasma is generated by a plasma generator using a slot-plane-antenna (SPA) technique. In some embodiments, the plasma also includes a reducing agent.

The invention relates to a method for treating surfaces of an electronic card (4) by means of a plasma torch (1), said card (4) comprising a plurality of electronic components (C1a, C1b, C1c, C2a, C2b, C3a) and a plurality of surfaces to be treated, arranged at various heights relative to a reference plane (Ref) of the electronic card (4). At least one region to be treated (Zn) containing the surfaces to be treated is determined, strata (S1, S2, S3) which are parallel to said reference plane (Ref) and each contain at least one surface to be treated are determined, and then a torch movement path is generated such that: the surfaces are treated, stratum by stratum; for each stratum, the torch is exclusively moved in parallel with the reference plane (Ref); during the projection of the plasma flow (2), each treated surface is exclusively placed in the ideal working zone (Pt).

In an activated gas generation apparatus, metal electrodes are formed on a bottom surface of a dielectric electrode, and are disposed so as to face each other with a central region of the dielectric electrode interposed therebetween in plan view. The metal electrodes face each other along the Y direction. A wedge-shaped stepped part is provided so as to protrude upward in the central region on an upper surface of the dielectric electrode. The wedge-shaped stepped part is formed so as to have a shorter formation width in the Y direction as approaching each of a plurality of gas spray holes in plan view.