A method of assisting with authenticating a workpiece is provided. In another aspect, ions are generated, accelerated in an accelerator, an isotope is created, and then the isotope is implanted within a workpiece to assist with authenticating of the workpiece. A further aspect includes a workpiece substrate, a visual marker and an isotope internally located within the substrate adjacent the visual marker.

A high-energy ion implantation system has an ion source and mass analyzer to form and analyze an ion beam along a beam path. A first RF LINAC accelerates the ion beam to a first accelerator exit, and a second RF LINAC accelerates the ion beam to a second accelerator exit along the beam path. A first magnet between the first and second RF LINACs alters the beam path along a first plane. A third RF LINAC accelerates the ion beam, and a second magnet between the second and third RF LINACs alters the beam path along a second plane. A beam shaping apparatus defines a shape of the ion beam, and a third magnet between the third RF LINAC beam shaping apparatus alters the beam path along a third plane, where the first, second, and third planes are not coplanar.

An RF resonator cavity that includes a resonator coil is disclosed. Unlike traditional RF resonator cavities, no sulfur hexafluoride is used in this cavity. Rather, the volume of the RF resonator cavity is pumped to vacuum conditions. This may be done using a vacuum system, or by hermetically sealing the cavity. This approach eliminates the use of a potent greenhouse gas, while maintaining the integrity of the cavity. Specifically, the dielectric strength of the vacuum is greater than that of sulfur hexafluoride. This RF resonator cavity may be deployed in a linear accelerator used to implant ions into a workpiece.

An ion implantation system including an ion source for generating an ion beam, an end station for holding a substrate to be implanted by the ion beam, and a linear accelerator disposed between the ion source and the end station and adapted to accelerate the ion beam, the linear accelerator comprising at least one acceleration stage including a resonator coil coupled to a drift tube assembly, the drift tube assembly including a first drift tube coupled to a first end of a first insulting rod via interference fit, a second drift tube coupled to a first end of a second insulting rod via interference fit, and a mounting bracket coupled to a second end of the first insulting rod and to a second end of the second insulting rod via interference fit.

An ion implanter. The ion implanter may include an ion source, to generate a continuous ion beam. The ion implanter may further include a linear accelerator, comprising a buncher, to receive the continuous ion beam and generate a bunched ion beam, and further comprising a plurality of acceleration stages, arranged to receive the bunched ion beam and accelerate the bunched ion beam. The ion implanter may also include a plurality of quadrupoles, arranged in alternating fashion with the plurality of acceleration stages; and a plurality of quadrupole switch assemblies, coupled to the plurality of plurality of quadrupoles, respectively, wherein a given quadrupole switch assembly comprises a polarity switching circuit.

A power feedthrough assembly for a linear accelerator. The power feedthrough assembly may include an insulating housing, comprising a curved ceramic shell, and a conductive rod, coupled to deliver an RF voltage to a given acceleration stage of the linear accelerator, where the conductive rod extends through an aperture in the insulating housing. The power feedthrough assembly may also include a flange, coupled to mechanically connect the insulating housing to a wall of the linear accelerator. As such, the insulating housing may include a coupling structure that couples the insulating housing to the conductive rod and to the flange, wherein the coupling structure comprises at least one protrusion configured to couple with an external structure that is located in the flange or the conductive rod.

An ion implanter. The ion implanter may include an ion source to generate an ion beam, and a linear accelerator, downstream to the ion source. The linear accelerator may include a buncher system to receive the ion beam and output a bunched ion beam, and a plurality of acceleration stages, to accelerate the bunched ion beam. The buncher system may include at least one RF buncher, a controller to adjust at least one control parameter of the at least one RF buncher over a plurality of instances; and a beam monitor, disposed downstream of the at least one RF buncher, and arranged to perform a plurality of beam measurements of the bunched ion beam over the plurality of instances. As such, the controller may be further arranged to determine a focal length of the buncher based upon the plurality of beam measurements.

This disclosure relates to stabilized anti-cancer atmospheric plasma (CAP)-stimulated media, to methods for preparing such media, and to methods of treatment using such media.