Patent classifications
H05K3/38
BONDED SUBSTRATE, METAL CIRCUIT BOARD, AND CIRCUIT BOARD
A bonded substrate includes a substrate, a metal plate forming a stacked state with the substrate, and bonding member. The metal plate has a first surface on the substrate side and a second surface opposite; wherein an edge of the first surface is located outside an edge of the second. The bonding member is disposed between the substrate and plate to bond the plate and substrate, and protrudes from the edge over an entire periphery of the plate. In cut surfaces obtained by cutting the bonded substrate, a peripheral surface length (A) from a portion corresponding to a peripheral edge of the first surface to a corresponding portion of the second, protrusion length of the bonding member, and thickness (C) of the metal plate satisfy first and second expressions.
0.032≤B/(A+B)≤0.400 (First Expression)
0.5 (mm)≤C≤2.0 (mm) (Second Expression)
BONDED SUBSTRATE, METAL CIRCUIT BOARD, AND CIRCUIT BOARD
A bonded substrate includes a substrate, a metal plate forming a stacked state with the substrate, and bonding member. The metal plate has a first surface on the substrate side and a second surface opposite; wherein an edge of the first surface is located outside an edge of the second. The bonding member is disposed between the substrate and plate to bond the plate and substrate, and protrudes from the edge over an entire periphery of the plate. In cut surfaces obtained by cutting the bonded substrate, a peripheral surface length (A) from a portion corresponding to a peripheral edge of the first surface to a corresponding portion of the second, protrusion length of the bonding member, and thickness (C) of the metal plate satisfy first and second expressions.
0.032≤B/(A+B)≤0.400 (First Expression)
0.5 (mm)≤C≤2.0 (mm) (Second Expression)
WIRING SUBSTRATE, ELECTRONIC DEVICE, AND ELECTRONIC MODULE
A wiring substrate includes an insulating substrate, a conductor layer and an interlayer. The insulating substrate contains AlN. The conductor layer contains Cu. The interlayer is located between the insulating substrate and the conductor layer. In the interlayer, between a first region near the insulating substrate and a second region near the conductor layer, Cu concentration is higher in the second region than in the first region, and Al concentration is higher in the first region than in the second region.
Copper-clad laminate
To provide a copper-clad laminate which maintains adhesion between a resin film and a conductor layer and which suppresses the occurrence of wrinkles. A copper-clad laminate has a base film containing a thermoplastic resin, an underlying metal layer film-formed on a surface of the base film by a dry plating method, and a copper layer film-formed on a surface of the underlying metal layer. The underlying metal layer has a mean thickness of 0.3 to 1.9 nm. Since the underlying metal layer has a mean thickness of 0.3 nm or more, it is possible to maintain adhesion between the base film and a conductor layer. Since the underlying metal layer has a mean thickness of 1.9 nm or less, it is possible to suppress an increase in the temperature of a film during film-forming of the underlying metal layer, and it is possible to suppress the occurrence of wrinkles.
Copper-clad laminate
To provide a copper-clad laminate which maintains adhesion between a resin film and a conductor layer and which suppresses the occurrence of wrinkles. A copper-clad laminate has a base film containing a thermoplastic resin, an underlying metal layer film-formed on a surface of the base film by a dry plating method, and a copper layer film-formed on a surface of the underlying metal layer. The underlying metal layer has a mean thickness of 0.3 to 1.9 nm. Since the underlying metal layer has a mean thickness of 0.3 nm or more, it is possible to maintain adhesion between the base film and a conductor layer. Since the underlying metal layer has a mean thickness of 1.9 nm or less, it is possible to suppress an increase in the temperature of a film during film-forming of the underlying metal layer, and it is possible to suppress the occurrence of wrinkles.
Resin composition, printed circuit board using the composition, and method of manufacturing the same
A resin composition, a printed circuit board using the composition, and a method of manufacturing the printed circuit board. The resin composition includes: a photopolymerizable compound, such as one having an ethylenically unsaturated bond which is polymerizable in a molecule, a photoinitiator, and a surface-modified silica by an alkyl sulfonated tetrazole compound.
Resin composition, printed circuit board using the composition, and method of manufacturing the same
A resin composition, a printed circuit board using the composition, and a method of manufacturing the printed circuit board. The resin composition includes: a photopolymerizable compound, such as one having an ethylenically unsaturated bond which is polymerizable in a molecule, a photoinitiator, and a surface-modified silica by an alkyl sulfonated tetrazole compound.
METAL/CERAMIC BONDING SUBSTRATE AND METHOD FOR PRODUCING SAME
There are provide a metal/ceramic bonding substrate wherein the bonding strength of an aluminum plate bonded directly to a ceramic substrate is higher than that of conventional metal/ceramic bonding substrates, and a method for producing the same. The metal/ceramic bonding substrate is produced by a method including the steps of: arranging a ceramic substrate 10 in a mold 20; putting the mold 20 in a furnace; lowering an oxygen concentration to 25 ppm or less and a dew point to −45° C. or lower in the furnace; injecting a molten metal of aluminum into the mold 20 so as to allow the molten metal to contact the surface of the ceramic substrate 10; and cooling and solidifying the molten metal to form a metal plate 14 for circuit pattern of aluminum on one side of the ceramic substrate 10 to bond one side of the metal plate 14 for circuit pattern directly to the ceramic substrate 10, while forming a metal base plate 12 of aluminum on the other side of the ceramic substrate 10 to bond the metal base plate 12 directly to the ceramic substrate 10.
Metallization having high power compatibility and high electrical conductivity
A metallization, for carrying current in an electrical component, includes a bottom layer overlying a substrate surface and includes titanium (Ti) or a titanium compound as main constituent. An upper layer overlies the bottom layer and includes copper (Cu) as main constituent. The bottom layer and the upper layer form a base layer. A top layer is in direct contact with the upper layer and includes aluminum (Al) as main constituent. The base layer further includes a middle layer, consisting of silver, that is arranged between the bottom layer and the upper layer.
Metal-ceramic substrate
A metal-ceramic substrate having at least one ceramic layer (2), which is provided on a first surface side (2a) with at least one first metallization (3) and on a second surface side (2b), opposite from the first surface side (2a), with a second metallization (4), wherein the first metallization (3) is formed by a film or layer of copper or a copper alloy and is connected to the first surface side (2a) of the ceramic layer (2) with the aid of a “direct copper bonding” process. The second metallization (4) is formed by a layer of aluminum or an aluminum alloy.