Patent classifications
H05K3/38
Printed circuit board automated layup system
An apparatus to automatically place layers of a printed circuit board on a fixture includes a robotic device having a base that is secured to a surface, an upright column that extends upwardly from the base, and a movable arm rotatably coupled to the upright column. The movable arm is configured to rotate about a vertical axis defined by the upright column. The movable arm is further configured to rotate from a position in which the movable arm is disposed over a laminate sheet fixture and to pick up a laminate sheet to a position in which the movable arm is disposed over a board layup fixture to deposit the laminate sheet in the board layup fixture, and from a position in which the movable arm is disposed over a bond film fixture and to pick up a bond film to a position in which the movable arm is disposed over the board layup fixture to deposit the bond film in the board layup fixture.
Printed circuit board automated layup system
An apparatus to automatically place layers of a printed circuit board on a fixture includes a robotic device having a base that is secured to a surface, an upright column that extends upwardly from the base, and a movable arm rotatably coupled to the upright column. The movable arm is configured to rotate about a vertical axis defined by the upright column. The movable arm is further configured to rotate from a position in which the movable arm is disposed over a laminate sheet fixture and to pick up a laminate sheet to a position in which the movable arm is disposed over a board layup fixture to deposit the laminate sheet in the board layup fixture, and from a position in which the movable arm is disposed over a bond film fixture and to pick up a bond film to a position in which the movable arm is disposed over the board layup fixture to deposit the bond film in the board layup fixture.
COMPOSITE COPPER COMPONENTS
The present invention is directed to provide novel composite copper components. For example, provided is a composite copper component including a copper oxide-containing layer formed on at least a portion of the surface of a copper component, in which when the surface of the composite copper component is bonded to a resin substrate by thermocompression, and the copper component is peeled off from the resin substrate after the thermocompression bonding, metal contained in the copper oxide-containing layer is transferred to the resin substrate.
CIRCUIT PART AND METHOD OF MANUFACTURING CIRCUIT PART
A circuit part is provided that provides both high heat dissipation and high adhesion of its circuit wiring. A circuit part includes: a metal member; an insulating resin layer located on the metal member; circuit wiring including a plating film located on the insulating resin layer; and a mounted component mounted on the circuit wiring and electrically connected to the circuit wiring, wherein a plurality of non-penetrating holes are provided in a wiring region, the non-penetrating holes being filled with the plating film, the wiring region being a portion of the resin-layer surface on which the circuit wiring is located, and the ratio of the depth d of the non-penetrating holes to the width D of the non-penetrating holes, d/D, is 0.5 to 5.
BONDED BODY, CIRCUIT BOARD, SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING BONDED BODY
A bonded body according to an embodiment comprises a ceramic substrate, a copper plate, and a bonding layer provided on at least one surface of the ceramic substrate and bonding the ceramic substrate and the copper plate, in which the bonding layer contains Ag, Cu, Ti, and a first element being one or two selected from Sn and In, a Ti alloy of Ti and at least one selected from Ag, Cu, Sn, and In existing at a bonding boundary between the copper plate and the bonding layer, and the Ti alloy existing over not less than 30% per a length of 30 μm at the bonding boundary.
WIRING STRUCTURE, METHOD FOR MANUFACTURING SAME, AND SEMICONDUCTOR PACKAGE
Disclosed is a method for manufacturing a wiring structure including a step of forming a wiring on an insulating resin layer. The step of forming the wiring includes: forming a modified region including pores in a surface layer of the insulating resin layer by treating a surface of the insulating resin layer with a treatment method including surface modification; forming a seed layer on the surface of the insulating resin layer by sputtering; and forming the wiring on the seed layer by electrolytic copper plating. The disclosed method may include, in this order: a step of forming a surface treatment agent layer that covers a surface of the wiring by treating the surface of the wiring with a surface treatment agent for improving adhesion; and a step of forming a modified region including pores in a surface layer of a first layer of the insulating resin layer by treating the surface of the first layer of the insulating resin layer with a treatment method including surface modification.
WIRING STRUCTURE, METHOD FOR MANUFACTURING SAME, AND SEMICONDUCTOR PACKAGE
Disclosed is a method for manufacturing a wiring structure including a step of forming a wiring on an insulating resin layer. The step of forming the wiring includes: forming a modified region including pores in a surface layer of the insulating resin layer by treating a surface of the insulating resin layer with a treatment method including surface modification; forming a seed layer on the surface of the insulating resin layer by sputtering; and forming the wiring on the seed layer by electrolytic copper plating. The disclosed method may include, in this order: a step of forming a surface treatment agent layer that covers a surface of the wiring by treating the surface of the wiring with a surface treatment agent for improving adhesion; and a step of forming a modified region including pores in a surface layer of a first layer of the insulating resin layer by treating the surface of the first layer of the insulating resin layer with a treatment method including surface modification.
Bonded Assembly, And Ceramic Circuit Substrate And Semiconductor Device Using The Same
A bonded assembly according to the present embodiment, includes a metal plate and a ceramic substrate bonded to each other through a bonding layer containing Ag. In the bonded assembly, in a measurement region that is formed in a cross section formed by a thickness direction of the bonding layer and an orthogonal direction thereto, and that has a size of a length in the thickness direction of the bonding layer×a length of 200 μm in the orthogonal direction, a Ag-rich region having a Ag concentration of 60 at % or more has an area ratio of 70% or less to a Ag-poor region having a Ag concentration of 50 at % or less.
Multilayered polyimide film having a low dielectric constant, laminate structure including the same and manufacture thereof
A multilayered polyimide film includes a first polyimide layer containing fluorine-containing polymer particles and having a first surface and a second surface, and a second polyimide layer and a third polyimide layer respectively disposed on the first surface and the second surface. The second and the third polyimide layers contain organic silicon oxygen compound particles. The multilayered polyimide film has a coefficient of thermal expansion (CTE) between about 13 and about 30 ppm/° C.
Multilayer printed wiring board and method of manufacturing the same
A multilayer printed wiring board and a method of manufacturing the same are provided. A multilayer printed wiring board of the present embodiment includes: a core base material formed by laminating a first wiring layer and a first insulating layer in this order on an insulating substrate; and a built-up layer formed by laminating a second wiring layer and a second insulating layer in this order on the core base material. A primer layer is formed between the second wiring layer and the first insulating layer, the second wiring layer has a lower surface at least part of which is in contact with the primer layer, and the second wiring layer has an upper surface and a side surface on both of which a tin-plated layer and a silane coupling layer are formed in this order.