H05K3/40

TECHNOLOGIES FOR APPLYING GOLD-PLATED CONTACT PADS TO CIRCUIT BOARDS
20230074269 · 2023-03-09 · ·

Technologies for applying gold-plated contact pads to circuit boards are disclosed. In one embodiment, an array of gold-plated contact pads is prepared on a flexible substrate. The array of gold-plated contact pads can then be transferred to a circuit board, such as by soldering the gold-plated contact pads to the circuit board. In another embodiment, an array of contact pads are prepared on a top and bottom surface of a substrate, and vias are added to connect the contact pads on the top and bottom surfaces. The top array of contact pads are gold-plated. The bottom array of contact pads are mated to a circuit board. Techniques described herein allow for gold-plated contact pads to be applied to a circuit board without requiring the entire circuit board to undergo a gold plating process, which may reduce manufacturing costs.

ANTENNA-ON-PACKAGE SYSTEM
20230131441 · 2023-04-27 ·

One example includes an antenna-on-package (AoP) system. The system includes a first transmission line patterned on a first metal layer. The first metal layer can be arranged to be coupled on a printed circuit board (PCB). The system also includes an antenna portion patterned on a second metal layer. The first and second metal layers can be separated by at least one dielectric layer. The system further includes a coaxial transition portion comprising a via configured to communicatively couple the first transmission line on the first metal layer to a second transmission line on the second metal layer. The second transmission line can be coupled to the antenna portion.

SEMICONDUCTOR DEVICE WITH INTERFACE STRUCTURE AND METHOD FOR FABRICATING THE SAME
20230130078 · 2023-04-27 ·

The present application discloses a semiconductor device with an interface structure and a method for fabricating the interface structure. The interface structure includes an interface board configured to be fixed onto and electrically coupled to a chuck of a testing equipment, and a first object positioned on a first surface of the interface board and electrically coupled to the interface board. The first object is configured to be analyzed by the testing equipment.

SEMICONDUCTOR DEVICE WITH INTERFACE STRUCTURE AND METHOD FOR FABRICATING THE SAME
20230130078 · 2023-04-27 ·

The present application discloses a semiconductor device with an interface structure and a method for fabricating the interface structure. The interface structure includes an interface board configured to be fixed onto and electrically coupled to a chuck of a testing equipment, and a first object positioned on a first surface of the interface board and electrically coupled to the interface board. The first object is configured to be analyzed by the testing equipment.

Catalytic laminate with conductive traces formed during lamination
11477893 · 2022-10-18 · ·

A circuit board is formed from a catalytic laminate having a resin rich surface with catalytic particles dispersed below a surface exclusion depth. Trace channels and apertures are formed into the catalytic laminate, electroless plated with a metal such as copper, filled with a conductive paste containing metallic particles, which are then melted to form traces. In a variation, multiple circuit board layers have channels formed into the surface below the exclusion depth, apertures formed, are electroless plated, and the channels and apertures filled with metal particles. Several such catalytic laminate layers are placed together and pressed together under elevated temperature until the catalytic laminate layers laminate together and metal particles form into traces for a multi-layer circuit board.

Component-embedded substrate

A component-embedded substrate includes: insulating layers each including a wiring pattern; an embedded component including a connection terminal; a plurality of vias that electrically connect the connection terminal to the wiring patterns adjacent to each other in a lamination direction. Each of the vias is composed of a via hole in the insulating layer and a conductive material in the via hole. One of the vias is a connection via connected to the connection terminal, and another of the vias is an adjacent via adjacent to the connection via in the lamination direction. The connection via and adjacent via overlap in a plan view. S1/A1≤0.61 and S1/A2≤0.61 are satisfied, where A1 is an average cross-sectional area of the connection via, A2 is an average cross-sectional area of the adjacent via, and S1 is an overlapping area of the connection via and adjacent via in the plan view.

Circuit board and semiconductor device including the same

Circuit board includes conductive plate, core dielectric layer, metallization layer, first build-up stack, second build-up stack. Conductive plate has channels extending from top surface to bottom surface. Core dielectric layer extends on covering top surface and side surfaces of conductive plate. Metallization layer extends on core dielectric layer and within channels of conductive plate. Core dielectric layer insulates metallization layer from conductive plate. First build-up stack is disposed on top surface of conductive plate and includes conductive layers alternately stacked with dielectric layers. Conductive layers electrically connect to metallization layer. Second build-up stack is disposed on bottom surface of conductive plate. Second build-up stack includes bottommost dielectric layer and bottommost conductive layer. Bottommost dielectric layer covers bottom surface of conductive plate. Bottommost conductive layer is disposed on bottommost dielectric layer and electrically connects to metallization layer. First build-up stack includes more conductive and dielectric layers than second build-up stack.

Power semiconductor module and method for producing a power semiconductor module

A power semiconductor module includes a first substrate, wherein the first substrate includes aluminum, a first aluminum oxide layer arranged on the first substrate, a conductive layer arranged on the first aluminum oxide layer, a first semiconductor chip, wherein the first semiconductor chip is arranged on the conductive layer and is electrically connected thereto, and an electrical insulation material enclosing the first semiconductor chip, wherein the first aluminum oxide layer is configured to electrically insulate the first semiconductor chip from the first substrate.

Power semiconductor module and method for producing a power semiconductor module

A power semiconductor module includes a first substrate, wherein the first substrate includes aluminum, a first aluminum oxide layer arranged on the first substrate, a conductive layer arranged on the first aluminum oxide layer, a first semiconductor chip, wherein the first semiconductor chip is arranged on the conductive layer and is electrically connected thereto, and an electrical insulation material enclosing the first semiconductor chip, wherein the first aluminum oxide layer is configured to electrically insulate the first semiconductor chip from the first substrate.

Circuit board structure

A circuit board structure has a first flexible circuit board, a second flexible circuit board, and a rigid board structure. The first flexible circuit board has a first dielectric layer and a first conductive circuit. The second flexible circuit board has a second dielectric layer and a second conductive circuit. The rigid board structure connects the first flexible circuit board and the second flexible circuit board. The rigid board structure has a third dielectric layer and a third conductive circuit. A dielectric loss value of the third dielectric layer is less than that of each of the first dielectric layer and the second dielectric layer. The third conductive circuit is electrically connected to the first and second conductive circuits.