Some embodiments include an integrated assembly having a first memory region, a second memory region, and an intermediate region between the first and second memory regions. The intermediate region has a first edge proximate the first memory region and has a second edge proximate the second memory region. Channel-material-pillars are arranged within the first and second memory regions. Conductive posts are arranged within the intermediate region. Doped-semiconductor-material is within the intermediate region and is configured as a substantially H-shaped structure having a first leg region along the first edge, a second leg region along the second edge, and a belt region adjacent the panel. Some embodiments include methods of forming integrated assemblies.

A semiconductor device includes a substrate having a first region and a second region, a first stack structure in the first region, a first channel structure penetrating through the first stack structure and in contact with the substrate, and a second stack structure on the first stack structure and the first channel structure. The device includes a second channel structure penetrating through the second stack structure and connected to the first channel structure, a first molding structure in the second region, a first alignment structure penetrating through the first molding structure and in contact with the substrate, and a second molding structure on the first molding structure and the first alignment structure. The device includes a second alignment structure penetrating through the second molding structure and connected to the first alignment structure, and a protective layer between the first molding structure and the second molding structure.

A semiconductor device includes a substrate having a first region and a second region, a first stack structure in the first region, a first channel structure penetrating through the first stack structure and in contact with the substrate, and a second stack structure on the first stack structure and the first channel structure. The device includes a second channel structure penetrating through the second stack structure and connected to the first channel structure, a first molding structure in the second region, a first alignment structure penetrating through the first molding structure and in contact with the substrate, and a second molding structure on the first molding structure and the first alignment structure. The device includes a second alignment structure penetrating through the second molding structure and connected to the first alignment structure, and a protective layer between the first molding structure and the second molding structure.

A pick-up structure for a memory device and method for manufacturing memory device are provided. The pick-up structure includes a substrate and a plurality of pick-up electrode strips. The substrate has a memory cell region and a peripheral pick-up region adjacent thereto. The pick-up electrode strips are parallel to a first direction and arranged on the substrate in a second direction. The second direction is different from the first direction. Each pick-up electrode strip includes a main part in the peripheral pick-up region and an extension part extending from the main part to the memory cell region. The main part is defined by fork-shaped patterns of a first mask layer. The extension part has a width less than that of the main part, and the extension part has a side wall surface aligned with a side wall surface of the main part.

Some embodiments include apparatuses and methods of forming the apparatuses. One of the apparatuses includes a device including tiers of materials located one over another, the tiers of materials including respective memory cells and control gates for the memory cells. The control gates include respective portions that collectively form part of a staircase structure. The staircase structure includes first regions and second regions coupled to the first regions. The second regions include respective sidewalls in which a portion of each of the first regions and a portion of each of the second regions are part of a respective control gate of the control gates. The device also includes conductive pads electrically separated from each other and located on the first regions of the staircase structure, and conductive contacts contacting the conductive pads.

An apparatus, a method and a system. The apparatus comprises a memory array including word lines defining a staircase structure, and a staircase etch stop layer including: a sandwich etch stop layer disposed on a top region the staircase and including a first etch stop layer and a third etch stop layer of a first material, and a second etch stop layer sandwiched between the first etch stop layer and the third etch stop layer and made of a second material having etch properties different from the first material; a precut etch stop layer disposed at a region of the staircase structure below the top region and including the second etch stop layer and the third etch stop layer and not the first etch stop layer; and contact structures extending through a dielectric layer and the staircase etch stop layer and landing on the word lines at the staircase structure.

A three-dimensional semiconductor memory device includes a substrate including a first connection region and a second connection region in a first direction and a cell array region between the first and second connection regions, and a first block structure on the substrate. The first block structure has a first width on the cell array region, the first block structure has a second width on the first connection region, and the first block structure has a third width on the second connection region. The first, second and third widths are parallel to a second direction intersecting the first direction, and the first width is less than the second width and is greater than the third width.

A semiconductor memory device includes a controller which executes a read operation. In the read operation, the controller applies first and second read voltages to a word line, reads data at each of first and second times, applies the first voltage to a source line at each of the first and second times, applies a second voltage to the source line during the application of the first read voltage to the word line and before the first time, and applies a third voltage to the source line during the application of the second read voltage to the word line and before the second time.

A semiconductor storage device includes: a substrate having a front surface; a plurality of conductive layers arranged in a first direction, the first direction intersecting the front surface of the substrate; a plurality of memory cells connected to the plurality of conductive layers; a contact electrode extending in the first direction and connected to one of the plurality of conductive layers; and an insulating structure extending in the first direction, the insulating structure connected to an end portion of the contact electrode on one side of the contact electrode in the first direction, and penetrating the plurality of conductive layers.

A semiconductor structure including a semiconductor substrate and at least one patterned dielectric layer is provided. The semiconductor substrate includes a semiconductor portion, at least one first device, at least one second device and at least one first dummy ring. The at least one first device is disposed on a first region surrounded by the semiconductor portion. The at least one second device and the at least one first dummy ring are disposed on a second region, and the second region surrounds the first region. The at least one patterned dielectric layer covers the semiconductor substrate.