A memory device includes first transistor over a semiconductor substrate, wherein the first transistor includes a first word line extending over the semiconductor substrate; a second transistor over the semiconductor substrate, wherein the second transistor includes a second word line extending over the first word line; a first air gap extending between the first word line and the second word line; a memory film extending along and contacting the first word line and the second word line; a channel layer extending along the memory film; a source line extending along the channel layer, wherein the memory film is between the source line and the word line; a bit line extending along the channel layer, wherein the memory film is between the bit line and the word line; and an isolation region between the source line and the bit line.

A 3D semiconductor device including: a first level including a single crystal silicon layer and a plurality of first transistors each including a single crystal channel; a first metal layer overlaying the plurality of first transistors; a second metal layer overlaying the first metal layer; a third metal layer overlaying the second metal layer; a second level, where the second level overlays the first level and includes a plurality of second transistors; a fourth metal layer overlaying the second level; and a connective path between the fourth metal layer and either the third metal layer or the second metal layer, where the connective path includes a via disposed through the second level and has a diameter of less than 500 nm and greater than 5 nm, where the third metal layer is connected to provide a power or ground signal to at least one of the second transistors.

A method for producing a 3D semiconductor device including: providing a first level, the first level including a first single crystal layer; forming first alignment marks and control circuits in and/or on the first level, where the control circuits include first single crystal transistors and at least two interconnection metal layers; forming at least one second level disposed above the control circuits; performing a first etch step into the second level; forming at least one third level disposed on top of the second level; performing additional processing steps to form first memory cells within the second level and second memory cells within the third level, where each of the first memory cells include at least one second transistor, where each of the second memory cells include at least one third transistor, performing bonding of the first level to the second level, where the bonding includes oxide to oxide bonding.

A method for manufacturing a semiconductor device is provided. The method includes the following. A substrate is provided. A stacked structure is formed on the substrate. The stacked structure includes first material layers and gate layers that are alternatively stacked. The stacked structure includes a giant block (GB) region and a stair-step region. A third material layer is formed on an upper surface of the GB region and an upper surface of the stair-step region. A fourth material layer filling the stair-step region and covering the GB region is formed. At least one contact structure is located in the stair-step region. Each of the at least one contact structure penetrates the third material layer and is connected with a respective one of the gate layers.

A method for manufacturing a semiconductor device is provided. The method includes the following. A substrate is provided. A stacked structure is formed on the substrate. The stacked structure includes first material layers and gate layers that are alternatively stacked. The stacked structure includes a giant block (GB) region and a stair-step region. A third material layer is formed on an upper surface of the GB region and an upper surface of the stair-step region. A fourth material layer filling the stair-step region and covering the GB region is formed. At least one contact structure is located in the stair-step region. Each of the at least one contact structure penetrates the third material layer and is connected with a respective one of the gate layers.

A 3D memory array includes a row of stacks, each stack having alternating gate strips and dielectric strips. Dielectric plugs are disposed between the stacks and define cell areas. A data storage film and a channel film are disposed adjacent the stacks on the sides of the cell areas. The middles of the cell areas are filled with an intracell dielectric. Source lines and drain lines form vias through the intracell dielectric. The source lines and the drain lines are each provided with a bulge toward the interior of the cell area. The bulges increase the areas of the source line and the drain line without reducing the channel lengths. In some of these teachings, the areas of the source lines and the drain lines are increased by restricting the data storage film or the channel layer to the sides of the cell areas adjacent the stacks.

A memory device includes a stacked structure including a plurality of memory cells, and first and second flights of steps. The first flights of steps are disposed at an end of the stacked structure along the first direction. The second flights of steps are adjacent to the first flights of steps disposed at the end of the stacked structure along the first direction. The first flights of steps and the second flights of steps comprise first portions and second portions alternately disposed along the first direction. The second portions are wider than the first portions along the second direction.

A semiconductor manufacturing process and semiconductor device having an airgap to isolate bottom implant portions of a substrate from upper source and drain device structure to reduce bottom current leakage and parasitic capacitance with an improved scalability on n-to-p spacing scaling. The disclosed device can be implanted to fabricate nanosheet FET and other such semiconductor device. The airgap is formed by etching into the substrate, below a trench in a vertical and horizontal direction. The trench is then filled with dielectric and upper device structure formed on either side of the dielectric filler trench.

A semiconductor manufacturing process and semiconductor device having an airgap to isolate bottom implant portions of a substrate from upper source and drain device structure to reduce bottom current leakage and parasitic capacitance with an improved scalability on n-to-p spacing scaling. The disclosed device can be implanted to fabricate nanosheet FET and other such semiconductor device. The airgap is formed by etching into the substrate, below a trench in a vertical and horizontal direction. The trench is then filled with dielectric and upper device structure formed on either side of the dielectric filler trench.

In certain aspects, a method for controlling wafer stress is disclosed. A semiconductor film is formed on a backside of a wafer. The wafer is deformed by stress associated with a front-side semiconductor structure on a front side of the wafer opposite to the backside of the wafer. A laser application region of the semiconductor film is determined. A laser anneal process is performed in the laser application region of the semiconductor film.