A configuration for efficiently placing a group of capacitors with one terminal connected to a common node is described. The capacitors are stacked and folded along the common node. In a stack and fold configuration, devices are stacked vertically (directly or with a horizontal offset) with one terminal of the devices being shared to a common node, and further the capacitors are placed along both sides of the common node. The common node is a point of fold. In one example, the devices are capacitors. N number of capacitors can be divided in L number of stack layers such that there are N/L capacitors in each stacked layer. The N/L capacitors are shorted together with an electrode (e.g., bottom electrode). The electrode can be metal, a conducting oxide, or a combination of a conducting oxide and a barrier material. The capacitors can be planar, non-planar or replaced by memory elements.

Some embodiments include an integrated assembly having a first bottom electrode adjacent to a second bottom electrode. An intervening region is directly between the first and second bottom electrodes. Capacitor-insulative-material is adjacent to the first and second bottom electrodes. The capacitor-insulative-material is substantially not within the intervening region. Top-electrode-material is adjacent to the capacitor-insulative-material. Some embodiments include methods of forming integrated assemblies.

Some embodiments include an integrated assembly having a first bottom electrode adjacent to a second bottom electrode. An intervening region is directly between the first and second bottom electrodes. Capacitor-insulative-material is adjacent to the first and second bottom electrodes. The capacitor-insulative-material is substantially not within the intervening region. Top-electrode-material is adjacent to the capacitor-insulative-material. Some embodiments include methods of forming integrated assemblies.

A method of manufacturing a ferroelectric-based 3-dimensional flash memory is disclosed. Also, a 3-dimensional flash memory that improves ferroelectric polarization properties and a method of manufacturing the same are disclosed.

A configuration for efficiently placing a group of capacitors with one terminal connected to a common node is described. The capacitors are stacked and folded along the common node. In a stack and fold configuration, devices are stacked vertically (directly or with a horizontal offset) with one terminal of the devices being shared to a common node, and further the capacitors are placed along both sides of the common node. The common node is a point of fold. In one example, the devices are capacitors. N number of capacitors can be divided in L number of stack layers such that there are N/L capacitors in each stacked layer. The N/L capacitors are shorted together with an electrode (e.g., bottom electrode). The electrode can be metal, a conducting oxide, or a combination of a conducting oxide and a barrier material. The capacitors can be planar, non-planar or replaced by memory elements.

Methods of forming microelectronic package structures, and structures formed thereby, are described. Those methods/structures may include attaching a die on a board, attaching a substrate on the die, wherein the substrate comprises a first region and a peripheral region, attaching a first memory device on the central region of the substrate, and attaching at least one additional memory device on the peripheral region of the substrate, wherein the at least one additional memory device is not disposed over the die.

Methods of forming microelectronic package structures, and structures formed thereby, are described. Those methods/structures may include attaching a die on a board, attaching a substrate on the die, wherein the substrate comprises a first region and a peripheral region, attaching a first memory device on the central region of the substrate, and attaching at least one additional memory device on the peripheral region of the substrate, wherein the at least one additional memory device is not disposed over the die.

A semiconductor device includes gate structure, bit line structure, contact plug structure, stack structure, and capacitor. The gate structure is disposed on first substrate. The bit line structure is disposed on the gate structure. The contact plug structure is disposed on the first substrate and spaced apart from the bit line structure. The stack structure is disposed on the bit line structure and the contact plug structure, and may include insulation layers and plate electrodes alternately stacked in a vertical direction substantially perpendicular to an upper surface of the first substrate. The capacitor includes a second electrode extending through the stack structure and contacting the contact plug structure. A ferroelectric pattern is disposed on a sidewall of the second electrode. First electrodes are disposed on a sidewall of the ferroelectric pattern, contact sidewalls of the plate electrodes, respectively, and are spaced apart from each other in the vertical direction.

A semiconductor device includes a wiring layer that includes at least one low-dielectric rate interlayer insulating film layer; a guard ring that is formed by placing in series a wire and a via so as to be in contact with a through electrode, in a portion in which the through electrode passing through the wiring layer is formed; and the through electrode that is formed by being buried inside the guard ring.

A configuration for efficiently placing a group of capacitors with one terminal connected to a common node is described. The capacitors are stacked and folded along the common node. In a stack and fold configuration, devices are stacked vertically (directly or with a horizontal offset) with one terminal of the devices being shared to a common node, and further the capacitors are placed along both sides of the common node. The common node is a point of fold. In one example, the devices are capacitors. N number of capacitors can be divided in L number of stack layers such that there are N/L capacitors in each stacked layer. The N/L capacitors are shorted together with an electrode (e.g., bottom electrode). The electrode can be metal, a conducting oxide, or a combination of a conducting oxide and a barrier material. The capacitors can be planar, non-planar or replaced by memory elements.