A method of manufacturing a double magnetic tunnel junction device is provided. The method includes forming a first free layer, forming a first tunnel barrier layer on the free layer, forming a reference layer on the first tunnel barrier layer, forming a second tunnel barrier layer on the reference layer, and forming a second free layer on the second tunnel barrier layer. An area of the second free layer is less than an area of the first free layer. Also, the first free layer, the first tunnel barrier layer and the reference layer are a first magnetic tunnel junction, and the reference layer, the second tunnel barrier layer and the second free layer are a second magnetic tunnel junction.

A method for providing a magnetic device and the magnetic device so provided are described. The magnetic device includes a magnetic layer having a surface. In some aspects, the magnetic layer is a free layer, a reference layer, or a top layer thereof. A tunneling barrier layer is deposited on the magnetic layer. At least a portion of the tunneling barrier layer adjacent to the magnetic layer is deposited at a deposition angle of at least thirty degrees from a normal to the surface of the magnetic layer. In some aspects, the deposition angle is at least fifty degrees.

A magnetic memory device includes an MTJ element between a bottom electrode layer and a top electrode layer. The MTJ element comprises a reference layer, a tunnel barrier layer and a free layer. The reference layer comprises sub-layers that protrude beyond a sidewall of the tunnel barrier layer. The tunnel barrier layer protrudes beyond a sidewall of one of sub-layers of the free layer. Sidewall spacers are disposed to respectively cover a sidewall of the top electrode layer, sidewalls of the sub-layers of the free layer, a sidewall of the tunnel barrier layer, and sidewalls of the sub-layers of the reference layer. The etching of the MTJ stack and the formation of the sidewall spacers are carried out in the same HDPCVD chamber without breaking the vacuum.

A method of manufacturing one or more interconnects to magnetoresistive structure comprising (i) depositing a first conductive material in a via; (2) etching the first conductive material wherein, after etching the first conductive material a portion of the first conductive material remains in the via, (3) partially filling the via by depositing a second conductive material in the via and directly on the first conductive material in the via; (4) depositing a first electrode material in the via and directly on the second conductive material in the via; (5) polishing a first surface of the first electrode material wherein, after polishing, the first electrode material is (i) on the second conductive material in the via and (ii) over the portion of the first conductive material remaining in the via; and (6) forming a magnetoresistive structure over the first electrode material.

A semiconductor memory cell having an electrically floating body having two stable states is disclosed. A method of operating the memory cell is disclosed.

The present invention is directed to a perpendicular magnetic structure comprising a first seed layer including tantalum, a second seed layer deposited on top of the first seed layer and including iridium, a third seed layer deposited on top of the second seed layer, and a fourth seed layer deposited on top of the third seed layer and including chromium. The third seed layer includes one of NiFe, NiFeB, NiFeCr, CoFeB, CoFeTa, CoFeW, CoFeMo, CoFeTaB, CoFeWB, or CoFeMoB. The perpendicular magnetic structure further includes a magnetic fixed layer structure formed on top of the fourth seed layer and having an invariable magnetization direction substantially perpendicular to a layer plane of the magnetic fixed layer structure. The magnetic fixed layer structure includes layers of a magnetic material interleaved with layers of a transition metal. The magnetic material includes cobalt. The transition metal includes one of nickel, platinum, palladium, or iridium.

According to one embodiment, a magnetic memory device includes a first magnetic layer having a variable magnetization direction, a second magnetic layer having a fixed magnetization direction, and a nonmagnetic layer provided between the first magnetic layer and the second magnetic layer, wherein the first magnetic layer includes a first sub-magnetic layer in a polycrystalline state and a second sub-magnetic layer in an amorphous state.

A conductive landing pad structure is formed utilizing a selective deposition process on a surface of an electrically conductive structure that is embedded in a first dielectric material layer. The conductive landing pad structure is located on an entirety of a surface of the electrically conductive structure and does not extend onto the first dielectric material layer. A conductive metal-containing structure is formed on a physically exposed surface of the conductive landing pad structure. During the formation of the conductive metal-containing structure which includes ion beam etching and/or a wet chemical etch, no conductive landing pad material particles re-deposit on the sidewalls of the conductive metal-containing structure.

A magnetoresistive element comprises a perpendicular coupling layer between a novel perpendicular AFM layer and ferromagnetic recording layer. The perpendicular coupling layer introduces giant magnetic anisotropy energies (P-MAE) on the recording layer interface and the P-AFM layer interface which further introduce RKKY coupling between the magnetic moment of the recording layer and the P-MAE induced magnetic moment at the P-AFM layer interface, yielding a giant perpendicular magnetic anisotropy of the recording layer.

A magnetic stack includes a first element including a ferromagnetic layer; a second element including a metal layer able to confer on the assembly formed by the first and the second elements a magnetic anisotropy perpendicular to the plane of the layers. The first element further includes a refractory metal material, the second element being arranged on the first element.