A 3D semiconductor device including: a first level including a single crystal silicon layer and a plurality of first transistors each including a single crystal channel; a first metal layer overlaying the plurality of first transistors; a second metal layer overlaying the first metal layer; a third metal layer overlaying the second metal layer; a second level, where the second level overlays the first level and includes a plurality of second transistors; a fourth metal layer overlaying the second level; and a connective path between the fourth metal layer and either the third metal layer or the second metal layer, where the connective path includes a via disposed through the second level and has a diameter of less than 500 nm and greater than 5 nm, where the third metal layer is connected to provide a power or ground signal to at least one of the second transistors.

A method for producing a 3D semiconductor device including: providing a first level, the first level including a first single crystal layer; forming first alignment marks and control circuits in and/or on the first level, where the control circuits include first single crystal transistors and at least two interconnection metal layers; forming at least one second level disposed above the control circuits; performing a first etch step into the second level; forming at least one third level disposed on top of the second level; performing additional processing steps to form first memory cells within the second level and second memory cells within the third level, where each of the first memory cells include at least one second transistor, where each of the second memory cells include at least one third transistor, performing bonding of the first level to the second level, where the bonding includes oxide to oxide bonding.

A memory device includes a transistor, a memory cell, and an interconnect layer. The transistor includes a bottom source/drain portion, a channel portion, and a top source/drain portion stacked from bottom to top and a gate structure surrounding the channel portion. The memory cell includes a nanowire bottom electrode, a first dielectric layer, a second dielectric layer, and a top electrode. The first dielectric layer laterally surrounds the nanowire bottom electrode. The second dielectric layer is over the nanowire bottom electrode and the first dielectric layer. The second dielectric layer is in contact with a top surface of the nanowire bottom electrode and a sidewall of the first dielectric layer. The top electrode covers the second dielectric layer. The interconnect layer is over the transistor and the memory cell to interconnect the transistor and the memory cell.

A memory device includes first to nth decks respectively coupled to first to nth row lines which are stacked over a substrate in a vertical direction perpendicular to a surface of the substrate, n being a positive integer, a first connection structure extending from the substrate in the vertical direction to be coupled to the first row line, even-numbered connection structures extending from the substrate in the vertical direction and respectively coupled to ends of even-numbered row lines among the second to nth row lines, and odd-numbered connection structures extending from the substrate in the vertical direction and respectively coupled to ends of odd-numbered row lines among the second to nth row lines. The even-numbered connection structures are spaced apart from the odd-numbered connection structures with the first row line and the first connection structure that are interposed between the even-numbered connection structures and the odd-numbered connection structures.

A hybrid switch and memory cell includes a transistor device that has an atomically-thin semiconductor material channel, source/drain electrodes, and gate dielectric. The cell includes a resistive-random-access-memory having a thin conductive edge and a 2D insulator layer over the thin conductive edge, wherein the 2D insulator layer extends over the semiconductor channel and serves as the gate dielectric in the transistor device.

A high bandwidth memory is provided. The high bandwidth memory includes a region of dynamic random access memory devices, a region of non-volatile memory devices adjacent to the region of dynamic random access memory devices, and a region of logic devices adjacent to both the region of dynamic random access memory devices and the region of non-volatile memory devices.

According to the embodiment, a semiconductor memory device includes a first conductive layer, a second conductive layer, a first memory cell, a second memory cell, a third conductive layer, a first contact, a intermediate memory cell, a fourth conductive layer, a third memory cell, a fifth conductive layer, and a second contact. The third conductive layer is separated from the first conductive layer and the second conductive layer in a third direction crossing a first direction and crossing a second direction and extends in the second direction. The fifth conductive layer is separated from the second conductive layer in the third direction and extends in the second direction. A first length of the second conductive layer along the second direction is shorter than a second length of the fifth conductive layer along the second direction.

A resistive random access memory array includes a plurality of memory cells. Each memory cell includes a gate all around transistor and a resistor device. The resistor device includes a first electrode including a plurality of conductive nanosheets. The resistor device includes a high-K resistive element surrounds the conductive nanosheets. The resistor device includes a second electrode separated from the conductive nanosheets by the resistive element. The resistive random access memory array is used to generate physical unclonable function data.

An integrated circuit includes a first chip bonded to a second chip. The first chip includes an array of memory cells. Each memory cell includes a transistor and phase change memory element. The transistor is between the phase change memory element and the second chip.

Embodiments of bonded unified semiconductor chips and fabrication and operation methods thereof are disclosed. In an example, a method for forming a unified semiconductor chip is disclosed. A first semiconductor structure is formed. The first semiconductor structure includes one or more processors, an array of embedded DRAM cells, and a first bonding layer including a plurality of first bonding contacts. A second semiconductor structure is formed. The second semiconductor structure includes an array of NAND memory cells and a second bonding layer including a plurality of second bonding contacts. The first semiconductor structure and the second semiconductor structure are bonded in a face-to-face manner, such that the first bonding contacts are in contact with the second bonding contacts at a bonding interface.