An electro-polarizable compound has the following general formula:

##STR00001##

Core1 is an aromatic polycyclic conjugated molecule having two-dimensional teat form and self-assembling by pi-pi stacking in a column-like supramolecule, R1 is a dopant group connected to Core1; a number m of R1 groups is 1, 2, 3 or 4. R2 is a substituent comprising one or more ionic groups connected to Core1; a number p of ionic groups R2 is 0, 1, 2, 3 or 4. The fragment marked NLE has a nonlinear polarization effect. Core2 is an electro-conductive oligomer self-assembling by pi-pi stacking in a column-like supramolecule, a number n of such oligomers is 0, 2, or 4. R3 is a substituent comprising one or more ionic groups connected to Core2; a number s of the ionic groups R3 is 0, 1, 2, 3 or 4. R4 is a resistive substituent providing solubility of the compound in a solvent and electrically insulating the column-like supramolecules from each other. A number k of substituents R4 is 0, 1, 2, 3, 4, 5, 6, 7 or 8.

A nanostructure device is provided and performs dual functions as a nano-switching/sensing device. The nanostructure device includes a doped semiconducting substrate, an insulating layer disposed on the doped semiconducting substrate, an electrode formed on the insulating layer, and at least one polymer nanofiber deposited on the electrode. The at least one polymer nanofiber provides an electrical connection between the electrode and the substrate and is the electroactive element in the device.

A static random access memory (SRAM) cell can include a first pull-up transistor, a first pull-down transistor, a second pull-up transistor, a second pull-down transistor, a first access transistor, and a second access transistor, all being coupled together in a 6 transistor SRAM cell, wherein each of the transistors is configured as a vertical channel transistor.

The application provides a conductive polymer, comprising a segment obtained by polymerizing a polymer monomer, wherein the polymer monomer comprises a compound represented by Formula I:

##STR00001##

wherein Y is selected from one of NH and S; R.sub.1 and R.sub.2 are independently selected from H, an optionally substituted linear or branched alkyl group, optionally substituted cycloalkyl group, optionally substituted aryl group, optionally substituted aralkyl group, optionally substituted alkoxy group or hydroxyl group, or an organic group containing at least one of a carboxyl group, sulfonic acid group and phosphate group, and at least one of R.sub.1 and R.sub.2 is an organic group containing at least one of carboxyl group, sulfonic acid group and phosphate group. Meanwhile, the application discloses a capacitor comprising the conductive polymer and a preparation method thereof. The conductive polymer provided by the application has a lower ESR and stable electrical performance.

Methods and devices for forming painted circuits using multiple layers of electrically conductive paint. In one aspect, a painted circuit includes a substrate (111) and one or more paint layer (106, 108, 110, 112, 114, 116, 120, 122) applied to the substrate, where the one or more paint layers each form an electrical component of the painted circuit. A given paint layer of the one or more paint layers includes a conductive paint formulation having a resistance that is defined by a concentration of conductive material that is included in the conductive paint formulation and a thickness of the given paint layer, and lower concentrations of the conductive material included in the conductive paint formulation provide a higher resistance than higher concentrations of conductive material.

To suppress a malfunction of a circuit due to deterioration in a transistor. In a transistor which continuously outputs signals having certain levels (e.g., L-level signals) in a pixel or a circuit, the direction of current flowing through the transistor is changed (inverted). That is, by changing the level of voltage applied to a first terminal and a second terminal (terminals serving as a source and a drain) every given period, the source and the drain are switched every given period. Specifically, in a portion which successively outputs signals having certain levels (e.g., L-level signals) in a circuit including a transistor, L-level signals having a plurality of different potentials (L-level signals whose potentials are changed every given period) are used as the signals having certain levels.

An organic semiconductor element of the present invention includes: an organic semiconductor film formed from single crystal of an organic semiconductor, and a doped layer formed in a surface of the organic semiconductor film. A strain sensor of the present invention includes: the organic semiconductor element, a pair of electrodes which are electrically connected through the doped layer, and a substrate which is deformable, and which has the organic semiconductor element formed on one surface thereof. A vibration sensor of the present invention includes: the organic semiconductor element, a pair of electrodes which are electrically connected through the doped layer, and a substrate which has flexibility, and which is fixed at one end or both ends thereof, the substrate having the organic semiconductor element formed on the surface of the flexible portion of the substrate.

A method for fabricating semiconductor device includes the steps of: forming a first metal interconnection in a first inter-metal dielectric (IMD) layer; performing a treatment process to rough a top surface of the first metal interconnection; and forming a carbon nanotube (CNT) junction on the first metal interconnection. Preferably, the treatment process further includes forming protrusions on the top surface of the first metal interconnection, in which the protrusions and the first metal interconnection comprise same material.

A quantum hybridization negative differential resistance device having negative differential resistance (NDR) under a low voltage condition using a nanowire based on an organic-inorganic hybrid halide perovskite, and a circuit thereof are provided. The quantum hybridization negative differential resistance device includes a channel formed of an organic-inorganic hybrid halide perovskite crystal and electrodes formed of its inorganic framework and is connected to opposite ends of the channel.

A two-terminal device (TTD) capable of preventing leakage current by using diffusion current having bidirectionality and generated due to a potential barrier by an insulator, and a lighting device using the TTD are disclosed.