The invention relates to an organic molecule, in particular for the application in organic optoelectronic devices. According to the invention, the organic molecule has a first chemical moiety with a structure of Formula I,

##STR00001##

and one second chemical moiety with a structure of Formula II,

##STR00002##

# represents the binding site of a single bond linking the first chemical moiety to the second chemical moiety; wherein at least one variable of X.sup.1, X.sup.2 is N, and at least one variable of X.sup.3, X.sup.4 is N.

An organic semiconductor element of the present invention includes: an organic semiconductor film formed from single crystal of an organic semiconductor, and a doped layer formed in a surface of the organic semiconductor film. A strain sensor of the present invention includes: the organic semiconductor element, a pair of electrodes which are electrically connected through the doped layer, and a substrate which is deformable, and which has the organic semiconductor element formed on one surface thereof. A vibration sensor of the present invention includes: the organic semiconductor element, a pair of electrodes which are electrically connected through the doped layer, and a substrate which has flexibility, and which is fixed at one end or both ends thereof, the substrate having the organic semiconductor element formed on the surface of the flexible portion of the substrate.

An organic semiconductor element of the present invention includes: an organic semiconductor film formed from single crystal of an organic semiconductor, and a doped layer formed in a surface of the organic semiconductor film. A strain sensor of the present invention includes: the organic semiconductor element, a pair of electrodes which are electrically connected through the doped layer, and a substrate which is deformable, and which has the organic semiconductor element formed on one surface thereof. A vibration sensor of the present invention includes: the organic semiconductor element, a pair of electrodes which are electrically connected through the doped layer, and a substrate which has flexibility, and which is fixed at one end or both ends thereof, the substrate having the organic semiconductor element formed on the surface of the flexible portion of the substrate.

The invention relates to novel organic semiconducting compounds containing a polycyclic unit, to methods for their preparation and educts or intermediates used therein, to compositions, polymer blends and formulations containing them, to the use of the compounds, compositions and polymer blends as organic semiconductors in, or for the preparation of, organic electronic (OE) devices, especially organic photovoltaic (OPV) devices, perovskite-based solar cell (PSC) devices, organic photo-detectors (OPD), organic field effect transistors (OFET) and organic light emitting diodes (OLED), and to OE, OPV, PSC, OPD, OFET and OLED devices comprising these compounds, compositions or polymer blends.

A method of making a solid state semiconducting film. The method includes blending a non-conjugated semiconducting polymer matrix containing crystalline aggregates with intentionally placed conjugation-break spacers along the polymer backbone, and fully conjugated semiconducting polymer. The resulting blend is subjected to a film making method to result is a semiconducting film. A solid state semiconducting film comprising a non-conjugated semiconducting polymer matrix containing crystalline aggregates with intentionally placed conjugation-break spacers along the polymer backbone, and a fully conjugated semiconducting polymer, wherein the fully conjugated semiconducting polymer serves as tie chains to bridge crystalline aggregates from the non-conjugated polymer matrix. Devices made from these semiconductor films.

Disclosed herein are embodiments of halogenated nanohoop compounds and assemblies thereof that can be used to for a variety of biological and chemical applications. The halogenated nanohoop compounds described herein exhibit non-covalent interactions that promote their ability to stack and form column-like assemblies having uniform pore size and that do not exhibit structural defects typically associated with other column-like structures, such as carbon nanotubes. Assemblies described herein also are capable of non-covalent interactions with other assemblies and thus can be used to form networks of the assemblies described herein.

There is provided a material comprising a n-doped electrically conductive polymer comprising at least one electron-deficient aromatic moiety, each electron-deficient aromatic moiety having a gas-phase electron affinity (E.sub.A) of 1-3 eV; and at least one counter-cation covalently bonded to the polymer or to a further polymer comprised in the material, the polymer being n-doped to a charge density of 0.1-1 electron per electron-deficient aromatic moiety, the polymer being capable of forming a layer having a vacuum workfunction (WF) of 2.5-4.5 eV, and wherein all the counter-cations comprised in the material are immobilised such that any electron in the polymer cannot significantly diffuse or migrate out of the polymer. There is also provided a method of preparing the material.

A nanostructure device is provided and performs dual functions as a nano-switching/sensing device. The nanostructure device includes a doped semiconducting substrate, an insulating layer disposed on the doped semiconducting substrate, an electrode formed on the insulating layer, and at least one polymer nanofiber deposited on the electrode. The at least one polymer nanofiber provides an electrical connection between the electrode and the substrate and is the electroactive element in the device.

The present disclosure provides an organic compound characterized by electronic polarizability and having a following general structural formula: ##STR00001## where Core is an aromatic polycyclic conjugated molecule, R.sub.1 is group providing solubility of the organic compound in an organic solvent, n is 1, 2, 3, 4, 5, 6, 7 or 8, R.sub.2 is substitute located in apex positions, R3 and R4 are substitutes located in side (lateral) positions and, the core has flat anisometric form and the R.sub.2 substitutes are selected from hydrogen and electrophilic groups (acceptors) and R.sub.3 substitutes and R.sub.4 substitutes are independently selected from hydrogen and nucleophilic groups (donors) or vice versa R.sub.3 substitutes and R.sub.4 substitutes are independently selected from hydrogen and nucleophilic groups (donors) and R.sub.2 substitutes are selected from hydrogen and electrophilic groups (acceptors), and the substitutes R.sub.2, R.sub.3 and R.sub.4 cannot all be hydrogen.

Provided are a lateral p-n junction black phosphorus thin film, and a method of manufacturing the same, and specifically, a lateral p-n junction black phosphorus thin film in which a p-type black phosphorus thin film having a p-type semiconductor property and a n-type black phosphorus thin film having a n-type semiconductor property form a lateral junction by modifying some regions on a surface of the black phosphorus thin film through light irradiation with a compound having a specific chemical structure, and a method of manufacturing the same.