An object is to provide an organic thin film transistor in which a high mobility can be obtained and a method for manufacturing an organic thin film transistor. The object is achieved by providing a base material, a gate electrode, a gate insulating layer, an organic semiconductor layer, a source electrode, and a drain electrode, further providing charge injection layers which are provided between the source electrode and a layer on a base material side of the source electrode and between the drain electrode and a layer on a base material side of the drain electrode and have a thickness that decreases in a direction opposite to a direction in which the source electrode and the drain electrode face each other on a side of the source electrode facing the drain electrode and a side of the drain electrode facing the source electrode, and scanning a metal layer with a laser so as to form the source electrode and the drain electrode, and dropwise-adding a solution which becomes the charge injection layers to a laser-scanned portion.

A method for manufacturing an organic electronic element according to one embodiment includes: a hole injection layer coating film formation step of applying a hole injection layer coating liquid containing a material having an electron-accepting property on a plastic substrate 10 to form a hole injection layer coating film 22b; and a heat treatment step of heating the hole injection layer coating film by irradiating the hole injection layer coating film with an infrared ray to form a hole injection layer. The hole injection layer coating film has absorption in a first wavelength range of 1.2 ?m to 5.0 ?m, and the infrared ray is an infrared ray in which 80% or more of total radiation energy of the infrared ray in a wavelength range of 1.2 ?m to 10.0 ?m is included in the first wavelength range.

The present invention relates to a method comprising the steps: a) providing a layered structure applicable for preparing an organic electronic device, comprising: aa) a substrate comprising a first electrode structure and a non-electrode part; bb) a grid formed by a grid material, wherein open areas of the grid are arranged above at least a part of the first electrode structure and the grid material is arranged above at least a part of the non-electrode part; and cc) a layer stack comprising at least one redox-doped layer having a conductivity of at least 1E?7 S/cm, the layer stack being deposited on the grid; wherein the optical density measured by absorption spectroscopy of the grid material is higher than the optical density of the open areas; and b) irradiating light pulses having a duration of <10 ms and an energy of 0.1 to 20 J/cm.sup.2 per pulse, alternatively 1 to 10 J/cm.sup.2, onto the layered structure; an organic electronic device obtainable this way and a device comprising said organic electronic device.

An organic semiconductor element functions as a strain sensor, and includes a substrate and an organic semiconductor layer formed on the substrate as a single-crystal thin film of an organic semiconductor that is a polycyclic aromatic compound with four or more rings or a polycyclic compound with four or more rings including one or a plurality of unsaturated five-membered heterocyclic compounds and a plurality of benzene rings. Since the organic semiconductor layer is formed as the single-crystal thin film, an identical crystal structure is obtained regardless of formation technique. Therefore, when the same strain is given, the same carrier mobility is obtained and uniform property is obtained with respect to the strain. Accordingly, it is possible to provide strain sensors having uniform property.

Provided is an organic electric element and an electronic device thereof, by using the mixture of the compounds as a phosphorescent host material, it is possible to achieve a high luminous efficiency and a low driving voltage of an organic electric element, and the life span of the device can be greatly improved.

Objects of the present invention is to provide an organic semiconductor element having high mobility and excellent temporal stability under high humidity, and a manufacturing method thereof, to provide a novel compound which is suitable as an organic semiconductor, and to provide an organic semiconductor film having high mobility and excellent temporal stability under high humidity and a manufacturing method thereof, and a composition for forming an organic semiconductor film that can suitably form the organic semiconductor film. The organic semiconductor element according to the present invention has an organic semiconductor layer containing a compound having a constitutional repeating unit represented by Formula 1. ##STR00001##

A polymer including a structural unit represented by the following formula (A). In the formula (A), P is independently a group represented by the following formula (P), a is an integer of 2 to 5, and b is an integer of 0 to 5. In the formula (P), A is independently a nitrogen atom or CR; X is a single bond, O, S, C(R).sub.2 or NR. R is independently a hydrogen atom, a substituted or unsubstituted alkyl group including 1 to 20 carbon atoms or the like, or a single bond used for bonding to another P or L, provided that at least one R contained in (P)a is represented by any one of the following formulas (3) to (7). ##STR00001##

An object is to provide: an organic compound which has excellent solubility in an organic solvent at room temperature, excellent storage stability in a solution state, and excellent heat resistance; an organic semiconductor material containing the organic compound; an organic thin film obtained by a printing process at room temperature using the organic semiconductor material; and an organic semiconductor device containing the organic thin film and having high mobility and high heat resistance. The organic compound is represented by Formula (A) below, and the organic semiconductor material contains this organic compound,

##STR00001##

wherein one of R.sub.1 and R.sub.2 represents an alkyl group, an aromatic hydrocarbon group having an alkyl group, or a heterocyclic group having an alkyl group, and another of R.sub.1 and R.sub.2 represents an aliphatic hydrocarbon group, an aromatic hydrocarbon group, or a heterocyclic group, with a proviso that R.sub.1 and R.sub.2 are not alkyl groups simultaneously.

The purpose of the present invention is to provide a photosensitive resin composition for thin film transistors, a cured film of which generates an extremely small amount of an outgas, and which is capable of forming an insulating layer for thin film transistors having excellent drive performance. In order to achieve the above-described purpose, the present invention has the configuration described below. Namely, a photosensitive resin composition for thin film transistors, which contains (A) an alkali-soluble resin having an amide group and/or an imide group, (B) a photosensitive compound and (C) organic solvents, and wherein the content of an organic solvent having nitrogen atoms in the organic solvents (C) is 1% by mass or less relative to the total mass of the organic solvents.

The present invention relates to a phosphor monomolecular compound, an organic transistor using same, and a water splitting and hydrogen production photocatalytic system using same. More specifically, the present invention comprises a water-soluble monomolecular compound including 1,5-naphthyridine-2,6-dione structure as a phosphor monomolecular compound.