A two-dimensional semiconductor transistor includes a gate electrode, a gate insulating layer disposed on the gate electrode, an organic dopant layer disposed on the gate insulating layer and comprising an organic material including electrons, a two-dimensional semiconductor layer disposed on the organic dopant layer, a source electrode disposed on the two-dimensional semiconductor layer, and a drain electrode disposed on the two-dimensional semiconductor layer and spaced apart from the source electrode. A hysteresis of the two-dimensional semiconductor transistor is reduced due to the two-dimensional semiconductor transistor including the organic dopant layer.

A two-dimensional semiconductor transistor includes a gate electrode, a gate insulating layer disposed on the gate electrode, an organic dopant layer disposed on the gate insulating layer and comprising an organic material including electrons, a two-dimensional semiconductor layer disposed on the organic dopant layer, a source electrode disposed on the two-dimensional semiconductor layer, and a drain electrode disposed on the two-dimensional semiconductor layer and spaced apart from the source electrode. A hysteresis of the two-dimensional semiconductor transistor is reduced due to the two-dimensional semiconductor transistor including the organic dopant layer.

Disclosed area a pressure-sensitive transistor device, a pressure-sensitive transistor display, and a tactile input pattern recognition system. The pressure-sensitive transistor device includes: a semiconductor layer; a block copolymer layer disposed on an upper surface of the semiconductor layer, wherein the block copolymer layer has a stack structure in which hydrophilic layers and hydrophobic layers are vertically and alternately stacked on top of each other, wherein the block copolymer layer contains cations and anions therein; an ion-gel layer disposed on an upper surface of the block copolymer layer; a source electrode and a drain electrode disposed on a lower surface of the semiconductor layer and electrically contacting the semiconductor layer, wherein the source electrode and the drain electrode area spaced apart from each other; and a gate electrode disposed on an upper surface of the ion-gel layer and in electrical and physical contact with the ion-gel layer.

Disclosed area a pressure-sensitive transistor device, a pressure-sensitive transistor display, and a tactile input pattern recognition system. The pressure-sensitive transistor device includes: a semiconductor layer; a block copolymer layer disposed on an upper surface of the semiconductor layer, wherein the block copolymer layer has a stack structure in which hydrophilic layers and hydrophobic layers are vertically and alternately stacked on top of each other, wherein the block copolymer layer contains cations and anions therein; an ion-gel layer disposed on an upper surface of the block copolymer layer; a source electrode and a drain electrode disposed on a lower surface of the semiconductor layer and electrically contacting the semiconductor layer, wherein the source electrode and the drain electrode area spaced apart from each other; and a gate electrode disposed on an upper surface of the ion-gel layer and in electrical and physical contact with the ion-gel layer.

Provided is an organic electric element and an electronic device thereof, by using the mixture of the compounds as a phosphorescent host material, it is possible to achieve a high luminous efficiency and a low driving voltage of an organic electric element, and the life span of the device can be greatly improved.

An organic electric element according to an embodiment of the present disclosure includes a first electrode, a second electrode, and an organic material layer formed between the first electrode and the second electrode. The organic material layer includes compounds represented by Formula 1 and Formula 2 of the present invention, thereby the driving voltage the organic electric element can be lowered, and the luminous efficiency and the life time of the organic electric element can be improved.

Provided is an organic electric element and an electronic device thereof, by using the mixture of the compounds as a phosphorescent host material, it is possible to achieve a high luminous efficiency and a low driving voltage of an organic electric element, and the life span of the device can be greatly improved.

The invention relates to a process for the production of an organic layer comprising regions with different electronic properties. The process is based on the use of dihydroanthracene, dihydrobenzene, benzol or fluorene precursors functionalised with at least one substituted propargyl alcohol. By subjecting these precursors to a reduction/re-aromatisation reaction and/or to a retro-Favorskii reaction one obtains small organic molecules or polymers having different electronic properties, due to the specific chemical composition generated by the different chemical reactions in which the precursors are involved. Therefore, starting from the same precursor and subjecting it alternatively to the two specified reactions, one obtains products with different electronic properties. i.e. molecules characterised by high energy levels of the highest occupied molecular orbital (HOMO), which have at least one aromatic ring substituted with at least one ethynyl group, and molecules characterised by lower energy levels of the lowest unoccupied molecular orbital (LUMO), which have at least one carbonyl functionality, preferably at least one quinone ring or at least one phenyl with at least one carbonyl functionality. The reactions are carried out in such a way that the final products are incorporated into a single organic layer.

The invention relates to a process for the production of an organic layer comprising regions with different electronic properties. The process is based on the use of dihydroanthracene, dihydrobenzene, benzol or fluorene precursors functionalised with at least one substituted propargyl alcohol. By subjecting these precursors to a reduction/re-aromatisation reaction and/or to a retro-Favorskii reaction one obtains small organic molecules or polymers having different electronic properties, due to the specific chemical composition generated by the different chemical reactions in which the precursors are involved. Therefore, starting from the same precursor and subjecting it alternatively to the two specified reactions, one obtains products with different electronic properties. i.e. molecules characterised by high energy levels of the highest occupied molecular orbital (HOMO), which have at least one aromatic ring substituted with at least one ethynyl group, and molecules characterised by lower energy levels of the lowest unoccupied molecular orbital (LUMO), which have at least one carbonyl functionality, preferably at least one quinone ring or at least one phenyl with at least one carbonyl functionality. The reactions are carried out in such a way that the final products are incorporated into a single organic layer.

Methods of preparing a polymer solution for organic electrochemical transistor preparation include preparing a solvent solution, preparing a dopant solution, and combining the solvent solution and the dopant solution at 60 to 90 volume percent solvent solution and 10 to 40 volume percent dopant solution. Preparing the solvent solution includes degassing a first solvent to form a degassed first solvent and combining the degassed first solvent with a polymer. Preparing the dopant solution includes degassing a second solvent to form a degassed second solvent and combining the degassed second solvent with a p-dopant.