Described herein is an electronic component that may include a substrate, wherein the substrate may include at least two electrodes, wherein the at least two electrodes are each spaced apart from each other on and/or within the substrate. When the electronic component is in a first operating state, an electrolytic material may be disposed at least in a spatial region between the at least two electrodes, wherein the electrolytic material comprises at least one polymerizable material. When the electronic device is in a second operating state, at least one electrical connection may be made between the at least two electrodes, wherein the at least one electrical connection comprises an electrically conductive polymer. The electrically conductive polymer may comprise one or more fiber structures, wherein the one or more fiber structures are in physical contact with the at least two electrodes.

Combinations of resistive change elements and resistive change element arrays thereof are described. Combinational resistive change elements and combinational resistive change element arrays thereof are described. Devices and methods for programming and accessing combinations of resistive change elements are described. Devices and methods for programming and accessing combinational resistive change elements are described.

Combinations of resistive change elements and resistive change element arrays thereof are described. Combinational resistive change elements and combinational resistive change element arrays thereof are described. Devices and methods for programming and accessing combinations of resistive change elements are described. Devices and methods for programming and accessing combinational resistive change elements are described.

The present disclosure relates to a composition that includes a perovskite of A.sub.2BX.sub.4, where A includes an R-form of a chiral molecule of at least one of ##STR00001##
and/or an S-form of the chiral molecule, B includes a cation, X includes an anion, R.sub.1 includes a first carbon chain having between 2 and 5 carbon atoms, R.sub.2 includes at least one of a hydrogen atom, a halogen atom, a carboxylic acid group, an alkoxy group, and/or a second carbon chain, and R.sub.3 includes a third carbon chain.

The present disclosure relates to a composition that includes a perovskite of A.sub.2BX.sub.4, where A includes an R-form of a chiral molecule of at least one of ##STR00001##
and/or an S-form of the chiral molecule, B includes a cation, X includes an anion, R.sub.1 includes a first carbon chain having between 2 and 5 carbon atoms, R.sub.2 includes at least one of a hydrogen atom, a halogen atom, a carboxylic acid group, an alkoxy group, and/or a second carbon chain, and R.sub.3 includes a third carbon chain.

Various embodiments relate to a method for producing a metal-organic framework (MOF) having a desired redox conductivity and including redox-active linkers, having ?-alkyl-ferrocene groups, via de novo solvothermal synthesis. Various embodiments relate to a metal-organic framework (MOF) linker comprising an ?-alkyl-ferrocene group. Various embodiments relate to a metal-organic framework (MOF), having a first plurality of redox-active linkers, each having an ?-alkyl-ferrocene group. The MOF according to various embodiments, may further have one or more redox-inactive linkers. Various embodiments relate to materials, apparatuses, and components that include the MOF according to various embodiments. For example, various embodiments relate to thin-films, bulk powders, or electrodes.

Under one aspect, a covered nanotube switch includes: (a) a nanotube element including an unaligned plurality of nanotubes, the nanotube element having a top surface, a bottom surface, and side surfaces; (b) first and second terminals in contact with the nanotube element, wherein the first terminal is disposed on and substantially covers the entire top surface of the nanotube element, and wherein the second terminal contacts at least a portion of the bottom surface of the nanotube element; and (c) control circuitry capable of applying electrical stimulus to the first and second terminals. The nanotube element can switch between a plurality of electronic states in response to a corresponding plurality of electrical stimuli applied by the control circuitry to the first and second terminals. For each different electronic state, the nanotube element provides an electrical pathway of different resistance between the first and second terminals.

A ferroelectric memory cell (1) and a memory device (100) comprising one or more such cells (1). The ferroelectric memory cell comprises a stack (4) of layers arranged on a flexible substrate (3). Said stack comprises an electrically active part (4a) and a protective layer (11) for protecting the electrically active part against scratches and abrasion. Said electrically active part comprises a bottom electrode layer (5) and a top electrode layer (9) and at least one ferroelectric memory material layer (7) between said electrodes. The stack further comprises a buffer layer (13) arranged between the top electrode layer (9) and the protective layer (11). The buffer layer (13) is adapted for at least partially absorbing a lateral dimensional change (L) occurring in the protective layer (11) and thus preventing said dimensional change (L) from being transferred to the electrically active part (4a), thereby reducing the risk of short circuit to occur between the electrodes.

An electronic switching element (1) which comprises, in this sequence, a first electrode (16), a molecular layer (18) bonded to a substrate, and a second electrode (20), where the molecular layer essentially consists of compounds of the formula I indicated in claim 1, in which a mesogenic radical is bonded to the substrate via a spacer group (Sp) by means of an anchor group (G), is suitable for the production of components (1) as memristive device for digital information storage.

A solution-processable material for the fabrication of optical reflector and organic memory device is disclosed having a donor-acceptor system consisting of a boron(III) moiety as the electron acceptor unit. More specifically, described herein is the utilization of boron(III)-containing donor-acceptor compounds having a chemical structure represented by the following general formula (I) as active material for the fabrication of optical reflectors and organic memory devices. ##STR00001##
wherein B is a boron atom; each boron atom can attach optionally one or two of the X.sub.1, X.sub.2, X.sub.3 and X.sub.4 and two of the Y.sub.1, Y.sub.2, Y.sub.3, and Y.sub.4; X.sub.1, X.sub.2, X.sub.3 and X.sub.4 are independently a heteroatom or carbon atom, where the heteroatom or group can be F, Cl, Br, I, or OR, and R is a substituent on specific heteroatom or carbon atom which can be selected from alkyl or aromatic groups; Y.sub.1, Y.sub.2, Y.sub.3, and Y.sub.4 are independently a heteroatom, where the heteroatom or group can either be O, S, Se, Ge, Te, PR, or NR, and R is a substituent on specific heteroatom or carbon atom which can be selected from alkyl or aromatic groups; Z.sub.1, Z.sub.2, Z.sub.3, and Z.sub.4 are cyclic structure derivatives; D.sub.1, D.sub.2 and D.sub.3 are optionally alkyl substituted aromatic groups; and n and m can optionally be any integer.