H10K10/50

Methods for Reading Resistive States of Resistive Change Elements
20240363162 · 2024-10-31 · ·

The present disclosure generally relates to multi-switch storage cells (MSSCs), three-dimensional MSSC arrays, and three-dimensional MSSC memory. Multi-switch storage cells include a cell select device, multiple resistive change elements, and an intracell wiring electrically connecting the multiple resistive change elements together and to the cell select device. MSSC arrays are designed (architected) and operated to prevent inter-cell (sneak path) currents between multi-switch storage cells, which prevents stored data disturb from adjacent cells and adjacent cell data pattern sensitivity. Additionally, READ and WRITE operations may be performed on one of the multiple resistive change elements in a multi-switch storage cell without disturbing the stored data in the remaining resistive change elements. However, controlled parasitic currents may flow in the remaining resistive change elements within the cell. Isolating each multi-switch storage cell in a three-dimensional MSSC array, enables in-memory computing for applications such as data processing for machine learning and artificial intelligence.

ELECTRONIC ELEMENT COMPRISING A PLURALITY OF CELLS ARRANGED IN A THREE DIMENSIONAL ARRAY OF CELLS AND METHOD FOR PRODUCING SUCH AN ELECTRONIC DEVICE

An electronic element (10) comprising a plurality of cells (100) arranged in a three dimensional array of cells (100) is provided, wherein the cells (100) are located at crossings between two crossed electrode lines (30, 31). Each cell (100) of the electronic component (100) comprises in this order a first electrode (102), a part (104) of a molecular layer (20) and a second electrode (106), wherein the molecular layer (20) is a self-assembled monolayer of organic molecules having an anchoring group connected to a dipolar unit by means of a conformationally flexible unit.

Further aspects of the invention relate to a method and a compound for producing such an electronic element (10) and the use of such an electronic element (10).

ELECTRONIC ELEMENT COMPRISING A PLURALITY OF CELLS ARRANGED IN A THREE DIMENSIONAL ARRAY OF CELLS AND METHOD FOR PRODUCING SUCH AN ELECTRONIC DEVICE

An electronic element (10) comprising a plurality of cells (100) arranged in a three dimensional array of cells (100) is provided, wherein the cells (100) are located at crossings between two crossed electrode lines (30, 31). Each cell (100) of the electronic component (100) comprises in this order a first electrode (102), a part (104) of a molecular layer (20) and a second electrode (106), wherein the molecular layer (20) is a self-assembled monolayer of organic molecules having an anchoring group connected to a dipolar unit by means of a conformationally flexible unit.

Further aspects of the invention relate to a method and a compound for producing such an electronic element (10) and the use of such an electronic element (10).

Making of Organic Nanobiomimetic Memristor and Memcapacitors and its Applications in Dual Sensing of a Biomarker in Neurodegenerative Diseases Thereto
20180088069 · 2018-03-29 ·

An organic memristor/memcapacitor device comprises a biomimetic membrane attached on the surface of an electrode forming variable size toroidal matrix cross-linked to derivative cyclodextrin polymers forming cross bars, that facilitate a dual functioning biosensor characteristics which enabled to detecting voltage and current changes of a biomarker -amyloid (A) in pM concentration that direct linked to Alzheimer's disease and other neurodegenerative diseases under reagent-less, tracer-free and antibody-free conditions in biological fluid specimens.

DISPLAY PANEL, METHOD FOR FABRICATING THE SAME, AND DISPLAY DEVICE
20180040839 · 2018-02-08 ·

A display panel, a method for fabricating the same and a display device are disclosed. The display panel includes a top emission AMOLED display sub-panel, a normally-white mode reflective display sub-panel provided on the top emission AMOLED display sub-panel, and a switching element configured to turn on the top emission AMOLED display sub-panel and turn off the normally-white mode reflective display sub-panel according to a received first instruction, and turn on the normally-white mode reflective display sub-panel and turn off the top emission AMOLED display sub-panel according to a received second instruction. By fabricating the normally-white mode reflective display sub-panel on the top emission AMOLED display sub-panel, it is possible to switch, on one operation interface, to the normally-white mode reflective sub-panel to achieve a good display effect under strong light, or to the top emission AMOLED display sub-panel to achieve viewing color content. The display panel and the corresponding display device are easy to operate and simple in structure.

Resistive change element arrays
12176028 · 2024-12-24 · ·

Combinations of resistive change elements and resistive change element arrays thereof are described. Combinational resistive change elements and combinational resistive change element arrays thereof are described. Devices and methods for programming and accessing combinations of resistive change elements are described. Devices and methods for programming and accessing combinational resistive change elements are described.

Resistive change element arrays
12176028 · 2024-12-24 · ·

Combinations of resistive change elements and resistive change element arrays thereof are described. Combinational resistive change elements and combinational resistive change element arrays thereof are described. Devices and methods for programming and accessing combinations of resistive change elements are described. Devices and methods for programming and accessing combinational resistive change elements are described.

Aromatic compounds and use thereof for formation of molecular layers and fabrication of switching elements for memristive devices

The present invention relates to a compounds of formula I
R.sup.1-(A.sup.1-Z.sup.1).sub.rB.sup.1Z.sup.L-A.sup.2-(Z.sup.3-A.sup.3).sub.s-G(I)
in which the occurring groups and parameters have the meanings given in claim 1, to the use thereof for the formation of molecular layers, in particular self assembled monolayers, to a process for the fabrication of a switching element for memristive devices comprising said molecular layers and to a memristic device comprising said switching element.

Aromatic compounds and use thereof for formation of molecular layers and fabrication of switching elements for memristive devices

The present invention relates to a compounds of formula I
R.sup.1-(A.sup.1-Z.sup.1).sub.rB.sup.1Z.sup.L-A.sup.2-(Z.sup.3-A.sup.3).sub.s-G(I)
in which the occurring groups and parameters have the meanings given in claim 1, to the use thereof for the formation of molecular layers, in particular self assembled monolayers, to a process for the fabrication of a switching element for memristive devices comprising said molecular layers and to a memristic device comprising said switching element.

Resistance-switching device having conductive fiber, fabric type resistance-switching device array having the same, memory and sensor having the device or the array

Provided is a resistance-switching device. The resistance-switching device includes a first wiring including an aluminum oxide surface layer, and a second wiring including a carbon-containing surface layer in contact with the aluminum oxide surface layer. Electrochemical reaction products according to a reaction of aluminum oxide and carbon are generated or destroyed at a contact interface between the aluminum oxide surface layer and the carbon-containing surface layer according to a voltage or a current applied to the first wiring and the second wiring, and low resistance and high resistance are provided between the first wiring and the second wiring by the generation or destruction of the electrochemical reaction products.